• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.2
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• pp.159-164
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• 2005

When an optical pulse propagates through the atmospheric channel, the atmospheric turbulence attenuates and spreads this pulse. This attenuation and broadening of pulse are occurred by the fluctuation in the arrival time of pulse at the optical receiver. This pulse broadening induces the intersymbol interference (ISI) between the adjacent pulses. finally, the adjacent pulses are overlapped and the bit rate and the repeaterless transmission length are limited by the ISI. In digital communication system, therefore, the pulse broadening is more important factor than the attenuation. In this paper, thus, we find the ISI in the atmospheric turbulence as the function of the structure constant for the refractive index fluctuation that presents the strength of turbulence using the temporal momentum function and present it by numerical analysis.

• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.12-23
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• 2018

In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.