• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1448-1452
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• 2004

In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.219-220
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• 2009

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.261-262
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.183-184
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• 2008

• 한국생물공학회:학술대회논문집
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• 2000.04a
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• pp.149-152
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• 2000

In recent years, various artificial molecular photodiode have been fabricated by mimicking the electron transport function of biological photosynthesis. And now, we have been investigated the protein-organic hetero thin film photodiode using GFP as an sensitizer based on the redox potential difference of functional molecules. In this paper, shows molecular photodiode consisting of green fluorescence protein(GFP). viologen and TCNQ. The TCNQ and viologen were deposited onto ITO coated glass by LB technique. And GFP molecule was adsorption onto the viologen LB film surface by self-assembly method. Finally, The Al deposition onto GFP/viologen/TCNQ film surface was performed to make a top electrode. As a result, The MIM(metal/Insulator/Metal) structured device was constructed. The input light of 460nm wavelength was generated by the xenon lamp system, and then the photocurrent produced from the molecular device was detected through a current-voltage(I-V) measuring unit (SMU Model 236, Keithley, USA). An artificial molecular photodiode using protein(GFP)-adsorbed hetero-LB film is presented as a model system for the bioelectronic device based on the biomimesis.

• Analytical Science and Technology
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• v.11 no.2
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• pp.96-104
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• 1998

A photodiode array multichannel detector system for capillary electrophoresis was developed. The photodiode array detector for capillary electrophoresis (CE-PDA) has 1024 photodetectors and can analyze sample by measuring UV/VIS absorption spectrum in 275~675 nm wavelength range. The CE-PDA instrument can get a spectrum in 30 ms during sample separation and can be programmed by a PC to control various experimental conditions required for sample analysis. The performance of the multichannel CE-PDA instrument was tested using L-ascorbic acid and alizarin yellow GG mixture. The reproducibility test of the CE-PDA system showed 5.6% RSD.

• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.440-444
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• 1996

In this paper, we report an InGaAs/InAlAs multi-quantum well (MQW) avalanche photodiode (APD) showing a performance suitable for 10 Gbps lightwave communications. In designing the device, emphasis is given on the effect of indiffusion of Be dopant from the highly doped field layer into the MQW multiplication region. It is found that a small amount of diffusion can alter the dark current and gain characteristics of the device significantly. A spacer used to restrain such indiffusion is shown effective in reducing dark current (500 nA at a gain of 10) while maintaining a high bandwidth (10 GHz at a gain of 10) devices grown by molecular beam epitaxy.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.1-9
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• 2006

In this paper, a couple of 10Gb/s transimpedance amplifiers are realized in a 0.18um standard CMOS technology for optical communication applications. First, the voltage-mode inverter TIA(I-TIA) exploits inverter input configuration to achieve larger effective gm, thus reducing the input impedance and increasing the bandwidth. I-TIA demonstrates $56dB{\Omega}$ transimpedance gain, 14GHz bandwidth for 0.25pF photodiode capacitance, and -16.5dBm optical sensitivity for 0.5A/W responsivity, 9dB extinction ration and $10^{-12}$ BER. However, both its inherent parasitic capacitance and the package parasitics deteriorate the bandwidth significantly, thus mandating very judicious circuit design. Meanwhile, the current-mode RGC TIA incorporates the regulated cascade input configuration, and thus isolates the large input parasitic capacitance from the bandwidth determination more effectively than the voltage-mode TIA. Also, the parasitic components give much less impact on its bandwidth. RGC TIA provides $60dB{\Omega}$ transimpedance gain, 10GHz bandwidth for 0.25pF photodiode capacitance, and -15.7dBm optical sensitivity for 0.5A/W responsivity, 9dB extinction ration and $10^{-12}$ BER. Main drawback is the power dissipation which is 4.5 times larger than the I-TIA.

• 대한방사선방어학회:학술대회논문집
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• 2011.11a
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• pp.122-123
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• 2011