• Journal of the Institute of Electronics Engineers of Korea SP
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• v.42 no.5 s.305
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• pp.19-28
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• 2005

Real surround viewing conditions in watching the color display devices such as TV and PC monitor are quite different from the standard viewing conditions. Human visual system is adapted chromatically under the different viewing conditions in luminance levels and chromaticity of illuminants. Accordingly, the reproduced colors of the same chromaticity will appear as quite different color. Therefore, it is necessary that the displayed colors are reproduced to be appeared as the original colors in the standard viewing conditions. In this paper, we propose a chromatic adaptation model for the variations of the surround illuminants' chromaticity under the same luminance conditions. In proposed chromatic adaptation model, we calculate each gain of L, M, and S as nonlinear functions according to the chromaticity of the surround illuminants. And the optimal coefficients are obtained from the corresponding colors data of the Breneman's experiments. The proposed chromatic adaptation model is compared with the conventional chromatic adaptation models. In the experimental results, the proposed model has very good performance in the whole range of luminance levels. We also experimentally confirmed that the reproduced corresponding colors using the proposed chromatic adaptation are appeared as the original colors when the real surround viewing conditions are different from the standard viewing conditions.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1777-1783
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• 2014

In this paper, we designed and fabricated a high-speed semiconductor sensor for use in power control devices and analyzed the characteristics with pulsed radiation tests. At first, radiation sensitive circular Si PIN diodes with various diameters(0.1 mm ~5.0 mm) were designed and fabricated using Si epitaxial wafer, which has a $42{\mu}m$ thick intrinsic layer. The reverse leakage current of the diode with a radius of 2 mm at a reverse bias of 30 V was about 20.4 nA. To investigate the characteristic responses of the developed diodes, the pulsed gamma-radiation tests were performed with the intensity of 4.88E8 rad(Si)/sec. From the test results showing that the output currents and the rising speeds have a linear relationship with the area of the sensors, we decided that the optimal condition took place at a 2 mm diameter. Next, for the selected 2 mm diodes, dose rate tests with a range of 2.47E8 rad(Si)/sec to 6.21E8 rad(Si)/sec were performed. From the results, which showed linear characteristics with the radiation intensity, a large amount of photocurrent over 60mA, and a high speed response under 350ns without saturation, we can conclude that the our developed PIN diode can be a good candidate for the sensor of power control devices.

• Journal of the Korean Chemical Society
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• v.40 no.2
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• pp.109-116
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• 1996

A matrix modification was studied for the determination of trace germanium in mineral waters by electrothermal atomic absorption spectrophotometry (ET-AAS). For this, the type and quantity of modifier as well as the use of auxiliary modifier were investigated to realize the efficient modification. Germanium suffers from low sensitivity and poor reproducibility in ET-AAS determination because of the premature loss of germanium via volatile germanium monoxide formation when heated in the presence of carbon. Therefore, the addition of a matrix modifier is necessary to stablize the germanium, thermally and chemically. By the addition of palladium (10 ${\mu}g/mL)$ as a single modifier to the sample containing 500 ng/mL germanium, the charring temperature could be raised from 800 to $1000^{\circ}C$, and its absorbance was also increased, but the atomization temperature was not raised. In this case, the absorbance of germanium was not changed in the range of 10∼70 ${\mu}g/mL$ of palladium added. On the other hand, it was considered that the use of a mixed modifier could modifiy the matrix more effectively than with a single modifier. The best results were obtained by using 1% ammonium hydroxide as an auxiliary modifier together with 10 ${\mu}g/mL$ palladium. The charring temperature could be raised from 800 to $1100^{\circ}C$, without any change of the atomization temperature. With above optimum conditions, the trace amount of germanium in several mineral waters were determined by a calibration curve method, and good recoveries of more than 95% were also obtained in the samples in which a given amount of germanium was spiked. The detection limit of this method was about 6.9 ng/mL.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.140-143
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• 2006

Single crystalline $CoFe_2O_4$ thin films on (100) MgO substrates were fabricated using a rf magnetron sputtering method. The deposited films were investigated for their crystallization by X-ray diffraction, Rutherford back-scattering spectroscopy and field emission scanning electron microscopy. When a cobalt ferrite film was deposited at the substrate temperature of $600^{\circ}C$, squared grains of about 200 nm were uniformly distributed in the film. However, the grains became irregular and their sizes also varied from 30 to 150 nm when the substrate temperature was $700^{\circ}C$. Hysteresis loops of a film deposited at $600^{\circ}C$ showed that the magnetically easy axis of the film was perpendicular to the substrate surface. Except for the squareness ratio, magnetic properties of the cobalt ferrite films grown by the present rf sputtering method were as good as those of the films prepared by a laser ablation method: The in-plane and perpendicular coercivities were 283 and 6800 Oe, respectively. As the thickness of the deposited film increased twice, the saturation magnetization became double but the coercivity remained unchanged. However, deposition of the Co ferrite films with a higher rf powder decreased the squareness ratio and the perpendicular coercivity of the films.

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.139-148
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• 1991

A fiber-optic magnetic sensor system for the detection of small ac magnetic field(200Hz-2 kHz) was constructed. Magnetic field sensing part was fabricated by bonding a section of optical fiber to amorphous metallic glass(2605SC) having large magnetostriction effect. And with the directional coupler, all fiber type Mach-Zehnder interferometer was constructed to measure the variation of the external magnetic field by translating it into the optical phase shift in the interferometer. The signal fading problem of the interferometer, which is due to random phase drifts originated from the environment, i.e., temperature fluctuation, vibrations, etc., was elliminated by feedback phase compensation. This allows the sensitivity to be maintained at the maximum by keeping the interferometer in quadrature phase condition. The frequency response of metallic glass was found to be nearly flat in the range of 90 Hz-2 kHz and dc bias field for the maximum ac response was 3.5 Oe. The interferometer output showed good linearity over the range $\pm$0.5 Oe. For 1 kHz ac magnetic field the scale factor S and the minimum detectable magnetic field were measured to be 8.0 rad/Oe and $3X10^{-6} Oe/\sqrt{Hz}$at 1 Hz detection bandwidth respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.107-107
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• 2000

최근 반도체 소자의 고집적화 및 대용량화의 경향에 다라 MOSFET 소자 제작에 이동되는 게이트 산화막의 두께가 수 nm 정도까지 점점 얇아지는 추세이고 Giga-DRAM급 차세대 UNSI소자를 제작하기 위해 5nm이하의 게이트 절연막이 요구된다. 이런 절연막의 두께감소는 게이트 정전용량을 증가시켜 트랜지스터의 속도를 빠르게 하며, 동시에 저전압동작을 가능하게 하기 때문에 게이트 산화막의 두께는 MOS공정세대가 진행되어감에 따라 계속 감소할 것이다. 따라서 절연막 두께는 소자의 동작 특성을 결정하는 중요한 요소이므로 이에 대한 정확한 평가 방법의 확보는 공정 control 측면에서 필수적이다. 그러나, 절연막의 두께가 작아지면서 게이트 산화막과 crystalline siliconrksm이 계면효과가 박막의 두께에 심각한 영향을 주기 때문에 정확한 두께 계측이 어렵고 계측방법에 따라서 두께 계측의 차이가 난다. 따라서 차세대 반도체 소자의 개발 및 양산 체계를 확립하기 위해서는 산화막의 두께가 10nm보다 작은 1nm-5nm 수준의 박막 시료에 대한 두께 계측 방법이 확립이 되어야 한다. 따라서, 본 연구에서는 습식 산화 공정으로 제작된 3nm-7nm 의 게이트 절연막을 현재까지 알려진 다양한 두께 평가방법을 비교 연구하였다. 절연막을 MEIS (Medim Energy Ion Scattering), 0.015nm의 고감도를 가지는 SE (Spectroscopic Ellipsometry), XPS, 고분해능 전자현미경 (TEM)을 이용하여 측정 비교하였다. 또한 polysilicon gate를 가지는 MOS capacitor를 제작하여 소자의 Capacitance-Voltage 및 Current-Voltage를 측정하여 절연막 두께를 계산하여 가장 좋은 두께 계측 방법을 찾고자 한다.다. 마이크로스트립 링 공진기는 링의 원주길이가 전자기파 파장길이의 정수배가 되면 공진이 일어나는 구조이다. Fused quartz를 기판으로 하여 증착압력을 변수로 하여 TiO2 박막을 증착하였다. 그리고 그 위에 은 (silver)을 사용하여 링 패턴을 형성하였다. 이와 같이 공진기를 제작하여 network analyzer (HP 8510C)로 마이크로파 대역에서의 공진특서을 측정하였다. 공진특성으로부터 전체 품질계수와 유효유전율, 그리고 TiO2 박막의 품질계수를 얻어내었다. 측정결과 rutile에서 anatase로 박막의 상이 변할수록 유전율은 감소하고 유전손실은 증가하는 결과를 나타내었다.의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다

• Journal of the Korean Society of Radiology
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• v.4 no.2
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• pp.21-25
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• 2010

Recently, various semiconductor compounds as radiation detection material have been researched for a diagnostic x-ray detector application. In this paper, we have fabricated the CdS detecton sensor that has good photosensitivity and high x-ray absorption efficiency among other semiconductor compounds, and evaluated the application feasibility by investigating the detection properties about energy range of diagnostic x-ray generator. We have fabricated the line voltage selector(LCV) for a signal acquisition and quantities of CdS sensor, and designed the voltage detection circuit and rectifying circuit. Also, we have used a relative relation algorithm according to x-ray exposure condition, and fabricated the interface board with DAC controller. Performance evaluation was investigated by data processing using ANOVA program from voltage profile characteristics according to resistive change obtained by a tube voltage, tube current, and exposure time that is a exposure condition of x-ray generator. From experimental results, an error rates were reduced according to increasing of a tube voltage and tube current, and a good properties of 6%(at 90 kVp) and 0.4%(at 320 mA) ere showed. and coefficient of determination was 0.98 with relative relation of 1:1. The error rate according to x-ray exposure time showed exponential reduction because of delayed response velocity of CdS material, and the error rate has 2.3% at 320 msec. Finally, the error rate according to x-ray dose is below 10%, and a high relative relation was showed with coefficient of determination of 0.9898.

• Applied Chemistry for Engineering
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• v.34 no.3
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• pp.207-212
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• 2023

Near-infrared (NIR) absorbing dyes have been applied to various applications such as optical filters, biotechnology, energy storage and conversion, coating additive, and traditionally information-storage materials. Because image sensors used in cellphones and digital cameras have sensitivity in the NIR region, the NIR cut-off filter is essential to achieving more clear images. As energy storage and conversion have been important, diverse NIR absorbing materials have been developed to extend the absorption region to the NIR region, and NIR absorbing materials-based research has proceeded to improve device performances. Adding NIR-absorbing dye with a photo-thermal effect to a self-healable coating system has been attractive for future mobility technology, and more effective self-healing properties have been reported. In this report, the chemical structures of representative NIR-absorbing dyes and state of the art research based on NIR-absorbing dyes are introduced.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.