• Title/Summary/Keyword: 고출력 마이크로파

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Design and Analysis of a NMOS Gate Cross-connected Current-mirror Type Bridge Rectifier for UHF RFID Applications (UHF RFID 응용을 위한 NMOS 게이트 교차연결 전류미러형 브리지 정류기의 설계 및 해석)

  • Park, Kwang-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.6
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    • pp.10-15
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    • 2008
  • In this paper, a new NMOS gate cross-connected current-mirror type bridge rectifier for UHF RFID applications is presented. The DC converting characteristics of the proposed rectifier are analyzed with the high frequency equivalent circuit and the gate capacitance reduction technique for reducing the gate leakage current due to the increasing of operating frequency is also proposed theoretically by circuitry method. As the results, the proposed rectifier shows nearly same DC output voltages as the existing NMOS gate cross-connected rectifier, but it shows the gate leakage current reduced to less than 1/4 and the power consumption reduced more than 30% at the load resistor, and it shows more stable DC supply voltages for the valiance of load resistance. In addition, the proposed rectifier shows high enough and well-rectified DC voltages for the frequency range of 13.56MHz HF(for ISO 18000-3), 915MHz UHF(for ISO 18000-6), and 2.45 GHz microwave(for ISO 18000-4). Therefore, the proposed rectifier can be used as a general purpose one to drive RFID transponder chips on various RFID systems which use specified frequencies.