• Title/Summary/Keyword: 고주파 전단부

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Design of 24GHz Low Noise Amplifier for Automotive Collision Avoidance Radar (차량 충돌 예방 레이더 시스템-온-칩용 77GHz 고주파 전단부 설계)

  • Kim, Shin-Gon;Lee, Jung-Hoon;Ryu, Jee-Youl;Noh, Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.815-817
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    • 2012
  • 본 논문에서는 차량 충돌 예방 레이더 시스템-온-칩용 77GHz 고주파 전단부(RF front-end)를 제안한다. 이러한 고주파 전단부는 77GHz의 동작주파수를 가진 저 잡음 증폭기와 고주파 전력 증폭기로 구성된다. 이러한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정 ($f_T/f_{MAX}=120/140GHz$)으로 설계되어 있다. 저잡음 증폭기의 경우 전압이득이 36dB로 최근 발표된 연구결과 중 가장 우수한 수치를 보였다. 전력 증폭기는 포화전력과 출력 $P_{1dB}$이 18dBm과 15dBm으로 기존 연구결과 중 가장 우수한 결과를 각각 보였다.

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New On-Chip RF BIST(Built-In Self Test) Scheme and Circuit Design for Defect Detection of RF Front End (RF Front End의 결함 검출을 위한 새로운 온 칩 RF BIST 구조 및 회로 설계)

  • 류지열;노석호
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.2
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    • pp.449-455
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    • 2004
  • This paper presents a novel defect detection method for one chip RF front end with fault detection circuits using input matching measurement. We present a BIST circuit using 40.25{\mu}m$ CMOS technology. We monitor the input transient voltage of the RF front end to differentiate faulty and fault-free RF front end. Catastrophic as well as parametric variation fault models are used to simulate the faulty response of the RF front end. This technique has several advantages with respect to the standard approach based on current test stimulus and frequency domain measurement. Because DUT and fault detection circuits are implemented in the same chip, this test technique only requires use of digital voltmeter (RMS meter) and RF voltage source generator for simpleand inexpensive testing.

A New Fault-Based Built-In Self-Test Scheme for 1.8GHz RF Front-End (1.8GHz 고주파 전단부의 결함 검사를 위한 새로운 BIST 회로)

  • Ryu Jee-Youl;Noh Seok-Ho
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.6 s.336
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    • pp.1-8
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    • 2005
  • This paper presents a new low-cost fault-based Built-In Self-Test (BIST) scheme and technique for 1.8GHz RF receiver front end. The technique utilizes input impedance matching measurement. The BIST block and RF receiver front end are designed using 0.25m CMOS technology on a single chip. The technique is simple and inexpensive. The overhead of the BIST circuit is approximately $10\%$ of the total area of the RF front end.

Implementation of low-noise, wideband ultrasound receiver for high-frequency ultrasound imaging (고주파수 초음파 영상을 위한 저잡음·광대역 수신 시스템 구현)

  • Moon, Ju-Young;Lee, Junsu;Chang, Jin Ho
    • The Journal of the Acoustical Society of Korea
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    • v.36 no.4
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    • pp.238-246
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    • 2017
  • High frequency ultrasound imaging typically suffers from low sensitivity due to the small aperture of high frequency transducers and shallow imaging depth due to the frequency-dependent attenuation of ultrasound. These limitations should be overcome to obtain high-frequency, high- resolution ultrasound images. One practical solution to the problems is a high-performance signal receiver capable of detecting a very small signal and amplifying the signal with minimal electronic noise addition. This paper reports a recently developed low-noise, wideband ultrasound receiver for high-frequency, high-resolution ultrasound imaging. The developed receiver has an amplification gain of up to 73 dB and a variable amplification gain range of 48 dB over an operating frequency of 80 MHz. Also, it has an amplification gain flatness of ${\pm}1dB$. Due to these high performances, the developed receiver has a signal-to-noise ratio of at least 8.4 dB and a contrast-to-noise ratio of at least 3.7 dB higher than commercial receivers.

A Study on Characteristic Analysis of Single-Stage High Frequency Resonant Inverter Link Type DC-DC Converter (단일 전력단 고주파 공진 인버터 링크형 DC-DC 컨버터의 특성해석에 관한 연구)

  • Won, Jae-Sun;Park, Jae-Wook;Seo, Cheol-Sik;Cho, Gyu-Pan;Jung, Do-Young;Kim, Dong-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.2
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    • pp.16-23
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    • 2006
  • This paper presents a novel single-stage high frequency resonant inverter link type DC-DC converter using zero voltage switching with high power-factor. The proposed topology is integrated half-bridge boost rectifier as power factor corrector(PFC) and half-bridge high frequency resonant converter into a single-stage. The input stage of the half-bridge boost rectifier works in discontinuous conduction mode(DCM) with constant duty cycle and variable switching frequency. So that a boost converter makes the line current follow naturally the sinusoidal line voltage waveform. Simulation results have demonstrated the feasibility of the proposed high frequency resonant converter. Characteristics values based on characteristics analysis through circuit analysis is given as basis data in design procedure. Also, experimental results are presented to verify theoretical discussion. This proposed inverter will be able to be practically used as a power supply in various fields as induction heating applications, fluorescent lamp and DC-DC converter etc.

Efficiency Improvement of an Electronic Ballast for HID Lamps (HID 램프용 전자식 안정기의 효율 개선)

  • 이성희;이치환;권우현
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.2
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    • pp.9-17
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    • 2002
  • A high-efficiency electronic ballast for HID lamps is presented. The ballast consists of a PFC and a resonant inverter. To reduce losses of the ballast, DC link voltage should be determined by taking into account the peak voltage of lamp and the maximum flux density should be kept 0.2[T] on all of inductors. AR inductor at bridge diode is employed in order to remove currant harmonics from PFC. An inductor is connected in series with an electrolytic capacitor at DC link to reject high-frequency current. The acoustic resonance is eliminated using the stead spectrum technique. The electronic ballast for 250[W] metal-halide discharge lamp is implemented and 96[%] efficiency, no acoustic resonance and low conducted EMI level are accomplished.