• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.564-567
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• 2004

In the manufacture of integrated circuits, photolithography is the lowest yield step in present production lines. Electron beams form a powerful set of tools with which to attack this problem. Electron beams can be used to make patterns that are smaller than can a photolithography. We design a high voltage generator of electron beam manufacturing system. For this purpose, first, the configuration of electron beam manufacturing system was analyzed. Second, the basic configuration of a high voltage generator and test results were presented.

• Applied Microscopy
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• v.34 no.1
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• pp.51-59
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• 2004

The high acceleration voltage system used in scanning electron microscope were designed and manufactured to test its stability. The Cockcroft-Walton circuits are used both in the cathode voltage up to -30 kV and in the Wehnelt cylinder of -2 kV. The operating voltage of 6 V was applied to the heating of the filament. The wave forms which are formed in the second leg of the high voltage transformer were observed in the oscilloscope with 2 V of DC input. When the high voltages were in the range between 5 kV and 12 kV, the highest value of the stabilities of the generated voltages was obtained as 0.002%.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1862-1865
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• 2005

We have a plan to design a controller for electron beam manufacturing system. At first, we designed a controller for SEM. The controller consists of five parts (power source, beam controller, scanning controller, optic controller and main controller). Beam controller supplies pulse wave for generating high voltage and can monitor the status of high voltage instrument through emission current. Optic controller controls focus, spot size and image shift. Main controller transmits variables from operating program to each part and monitors the status of peripheral device.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.104-104
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• 2013

고분자이면서 유전체인 Poly-Tetra-Fluoro-Ethylene (PTFE) 튜브에 AC형 고전압을 인가하여 유전체 장벽 방전 (dielectric barrier discharge, DBD)를 유도하고, 발생된 마이크로 플라즈마에 의한 PTFE 튜브 내벽의 표면 개질에 관한 연구이다. 가스인입과 진공배기가 가능한 장치에 PTFE 튜브를 연결하고, 튜브내부를 진공상태를 유지하면서 반응가스를 이용하여 튜브 내벽을 표면개질 하였다. 반응가스를 아르곤, 수소, 아세틸렌, 산소, 질소를 반응 단계에 맞게 혼입하여 마이크로 플라즈마를 발생시켜 플라즈마에 의한 표면변화를 관찰하였다. 표면은 반응성 가스 플라즈마에 의해 물리 화학적 반응이 일어나 고분자 표면의 반응성 활성화를 통한 표면개질의 방식으로 진행되었다. 표면 개질된 튜브 내벽 표면에 대해 XPS, FT-IR, SEM, 접촉각 측정과 분석 실시함으로써 표면변화를 관찰하였다.