• Applied Microscopy
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• v.25 no.4
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• pp.124-131
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• 1995

High resolution transmission electron microscopic observations on the $Hg_{1-x}\;Tl_{x}\;Ba_{2}(Ca_{0.86}\;Sr_{0.14})_{2}\;Cu_{3}\;O_{8+\delta}$(x=0.00, 0.25, 0.50, 0.75) were carried out using side-entry type TEM working at 300 kV. The TEM samples are prepared by powder method. The pellets are crushed in agatar motar and suspended in $CCl_4$, solution and scooped in holely carbon microgrid. The 1223 structures are observed in all samples with [010] zone axis. Except x=0.25 sample, the lattice parameter a and c tend to decrease as the thallium contents are increased ranging from 0.3936 nm to 0.3713 nm for a, and from 1.6131 nm to 1.5138 nm for c parameter. Those of x=0.25 sample are reduced too much, 0.3785 nm for a, 1.5375 nm for c. The sample with x=0.25 shows the intergrowth of 1223 and 1234 structure with the ratio of 19 to 1. As the thallium content increases, the structures become more stable without having any defect. The samples are damaged by electron beam irradiation during the observation, however the structure can endure longer as the thallium contents are increased.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.203-209
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• 1999

LaAlO3d single phase used as the butter layer on Si wafer for YBa2Cu3O7-$\delta$ superconductor application were prepared by solid state reaction method and by self-sustaining combustion process. The microstructure and crystallity of synthesiszed LaAlO3 powder studied using scanning electron microscope (SEM) and X-ray diffractometer(XRD), specific surface area and sintering characteristics fo powder were investigated by Brunauer-Emmett-Teller (BET) method and dilatometer respectively. In solid state reaction method, it is difficult to obtain LaAlO3 single phase up to 150$0^{\circ}C$ period. However, in self-sustaining combustion process, it is to easy to do it only $650^{\circ}C$. Based on the results of analysis of dilatometer it is easier to obtain high sintering density (98.87%) in self-sustaining combustion process than in the solid state reaction method. This reason is that the average particle size prepared by self-sustaining combustion process is nano crystal size and has high specific surface are value(56.54 $m^2$/g) compared with that by solid state reaction method. Also, LaAlO3 layer on the Si wafer has been achieved by screen printing and sintering method. Even though the sintering temperature is 130$0^{\circ}C$, the phenomena of silicon out diffusion in LaAlO3/Si interphase are not observed.