• Korean Journal of Materials Research
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• v.5 no.7
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• pp.820-828
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• 1995

Ti-sillcides are formed on an atomically clean Si substrate and its phase transition and surface and interface morphologies are examined depending on the Ti-film thicknesses, deposition temperatures and Si substrate orientations. Ti film thicknesses of 400$\AA$ and 200$\AA$ have been deposited at elevated temperatures from 50$0^{\circ}C$ to 90$0^{\circ}C$ with increments of 10$0^{\circ}C$ on Si(100) and Si(111) Ti-silicides are formed and analyzed with using XRD, SEM, and TEM to verify the phase transition and the surface and interface morphologies. The phase transition from C49 to C54 is observed to occur around $650^{\circ}C$ and examined to show some retardation depending on the substrate orientation and film thickness. This retardation of phase transition is explained by the consideration based on the surface and volume free energies. A rough surface of C49 TiSi$_2$is exhibited because of characteristics of nonuniform diffusion across the interface while the smooth surface and island formation of C54 TiSi$_2$is examined.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.31-37
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• 2009

A zwitterionic surfactant shows not only detergency but also mildness effect since it shows characteristics of a nonionic or an anionic surfactant above an isoelectric point, while showing characteristics of a cationic surfactant below an isoelectric point. Therefore, a zwitterionic surfactant can serve as a dual function surfactant by a single molecule through the interconversion of cleaning and softening effects depending on pH variations of the aqueous solution. In this study, physical properties of betaine surfactant such as CMC, surface tension, interfacial tension, contact angle and viscosity were measured and phase behavior study was performed. Also dual function characteristics of betaine zwitterionic surfactant were investigated by measuring an isoelectric point using QCM(quartz crystal microbalance) and zeta potential measurement. The CMC of betaine surfactant was near $10^{-4}mol/L$ and the surface tension at CMC was about 32 mN/m. The interfacial tension between 1 wt% aqueous solution and n-decane measured by spinning drop tensiometer at pH 2~10 resulted in an increase in interfacial tension until pH 5 and a decrease with pH after 5 and equilibration time showed the similar trend with an increase in pH. The isoelectric point of betaine surfactant measured by QCM experiment was found to exist between 3.0 and 3.3, which is the same as the result determined by zeta potential measurement.

• Clean Technology
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• v.12 no.1
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• pp.45-51
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• 2006

Colloidal Liquid Aphrons(CLAs) were prepared from different solvents such as nonpolar hydrocarbons, alcohols, and amines. Water-soluble surfactant and oil-soluble surfactant were used in this study. The effect of PVR (phase volume ratio) and concentration of extractant on the stability of CLA was investigated. The stability of CLA was affected by PVR. As PVR was increased, the stability of CLA was decreased.

• Journal of the Korea Concrete Institute
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• v.14 no.5
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• pp.668-676
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• 2002

Especially, when orthotropic material such as uni-dierectionally woven Carbon Fiber Sheet, resisting only the unidirectional tension, is used to strengthening bridge deck, the direction and width of the strengthening material should be considered very carefully. Thus, analysis of the failure characteristics and the premature failure mechanism of the strengthened decks based on the test results are required. In this study, the premature failure due to the interface debonding of strengthening material of the strengthened deck slab are inquired into failure mechanism through both experiments results and analyses with prototype strengthened deck specimens using carbon fiber sheet. From the test results, interface debonding of strengthening material is occured at the crack face

• Journal of the Korean Vacuum Society
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• v.4 no.1
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• pp.51-59
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• 1995

(001)방향 GaAs 기판과 Si/Co 박막의 계면반응 및 상평형에 관한 연구를 300-$700^{\circ}C$ 열처리 구간에서 행하였다. 반응에 의한 상전이 과정은 glancing angle X-ray diffraction(GXRD), Auger electron spectroscopy(AES) 및 cross-sectional transmission electron microscopy(GXRD), Auger electron spectroscopy(AES) 및 corss-sectional transmission electron microscopy(XTEM)을 이용하여 분석하였다. Si/Co/GaAs계의 계면반응에서 Co는 $380^{\circ}C$에서 GaAs 기판 및 Si와 반응하여 Co2GaAs과 Co2Si상을 형성하였다. $420^{\circ}C$에서 열처리 후, Co층은 모두 소모되었으며 단면구조는 Si/CoSi/CoGa(CoAs)/Co2GaAs/GaAs으로 전이되었다. $460^{\circ}C$까지 온도를 올려 계속적인 반응을 일으키면 CoGa와 CoAs이 분해되면서 CoSi가 성장하였고, $600^{\circ}C$에서는 Co2GaAs마저 분해되고 CoSi상이 성장하여 GaAs와 계면을 형성하였다. CoSi와 GaAs사이의 계면은 $700^{\circ}C$의 고온까지 안정하였으며 이러한 계면반응 결과는 계산에 의하여 구한 Si-Co-Ga-As 4원계 상태도로부터 이해될 수 있었다.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.3
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• pp.599-606
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• 1988

Structures of interfacial waves in nearly-horizontal countercurrent stratified air-water flow have been measured by means of a needle contact method. Based upon a statistical analysis for the liquid film distribution, statistical properties of the waves such as mean film thickness, mean wave amplitude and rms value of the wave fluctuation have been calculated. The results show that the film distribution can be described by a Gaussian probability density function for the three-dimensional wave regime. It is also indicated that the mean film thick ness and the rms value of the wave fluctuation increase as gas and liquid flow rates are increased in countercurrent two-phase flow. The dimensionless intensity of the wave fluctuation may be regarded as a function of the Froude number and the dimensionless mean film thickness.

• Journal of Soil and Groundwater Environment
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• v.8 no.2
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• pp.36-43
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• 2003

Feasibility of micellar-enhanced ultrafiltration far the removal of nitrate was investigated using cationic surfactants, cetylpyridinium chloride and octadecylamine acetate. The removal of nitrate increased as the molar ratio of surfactant increased. With the molar ratio of 3, at least 80% of nitrate was removed, while > 98% of nitrate was removed at the surfactant molar ratio of 10. Octadecylamine acetate showed higher removal efficiency of nitrate and higher rejection of surfactant than cetylpyridinium chloride because of the accessibility of nitrate to surfactant micelles due to head group of surfactant. Octadecylamine acetate turned out to be a better surfactant than cetylpyridinium chloride for micellar-enhanced ultrafiltration to remove nitrate from groundwater.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.558-562
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• 1999

For 6H-SiC crystals which was obtained by sublimation growth, the formation of micropipes and internal planar defects was discussed in consideration of the inter-relationship between mass adsorption behavior and the defects origin on the growth interface on the basis of KSV theory and the the step growth pattern on the vicinal plane. Micropipes and planar defects was formed in the region which the step could not be grown by impurities impinging. It was realized that the internal defects formation was related to the crystallographic step planes formed on the growth interface and the migration of the molecules adsorbed on it.

• Explosives and Blasting
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• v.20 no.3
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• pp.7-13
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• 2002

제 5세대의 안전화약이라고 부르는 에멀젼폭약은 고전적인 폭약의 개념을 불과 수년 사이에 크게 바꾸어 놓았다. 그러나 정밀화학공업이 상당한 수준에 이르고 있는 현시점에 가장 핵심적인 기술에 속하는 에멀젼폭약의 계면활성저에 대한 국내 연구 발표사례는 전무한 실정이다. 에멀젼폭약의 기본 이론인 왁스 성분과 수분과의 상관관계에 결정적인 역할을 하는 계면활성제에 대한 꾸준한 연구결과 HLB 3~9 범위 중 4.3에 속하는 Span80 이라는 S.A.A가 가장 양호한 결과를 나타내었다. 아울러 기존 생산시스템의 작업온도 $90^\circ{C}$보다 훨씬 낮은 $60^\circ{C}$전후에서도 생산이 가능하다는 실험적 결론을 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.142-142
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• 2010

본 논문은 단결정 및 다결정 실리콘 기판 상에 아산화질소 플라즈마 처리를 통하여 형성한 초박형 실리콘 옥시나이트라이드 박막의 특성과 이의 어플리케이션에 관한 것이다. 초박형 절연막은 현재 다양한 전자소자의 제작과 특성 향상을 위하여 활용되고 있으나 일반적인 화학 기상 증착 방법으로는 균일도를 확보하기 어려운 문제점을 가지고 있다. 디스플레이의 구동소자로 활용되는 박막 트랜지스터의 특성 향상과 비휘발성 메모리 소자의 터널링 박막에 응용하기 위하여 초박형 실리콘 옥시나이트라이드 박막의 증착과 이의 특성을 분석하였고, 실제 어플리케이션에 적용하였다. 실리콘 산화막과 실리콘 계면상에 존재하는 질소는 터널링 전류와 결함 형성을 감소시키며, 벌크 내에 존재하는 질소는 단일 실리콘 산화막에 비해 더 두꺼운 박막을 커패시턴스의 감소없이 이용할 수 있는 장점이 있다. 아산화질소 플라즈마를 이용하여 활성화된 질소 및 산소 라디칼들이 실리콘 계면을 개질하여 초박형 실리콘 옥시나이트라이드 박막을 형성할 수 있다. 플라즈마 처리 시간과 RF power의 변화에 따라 형성된 실리콘 옥시나이트라이드 박막의 두께 및 광학적, 전기적 특성을 분석하였다. 아산화질소 플라즈마 처리 방법을 사용한 실리콘 옥시나이트라이드 박막을 시간과 박막 두께의 함수로 전환해보면 초기적으로 증착률이 높고 시간이 지남에 따라 두께 증가가 포화상태에 도달함을 확인할 수 있다. 아산화질소 플라즈마 처리 시간의 변화에 따라 형성된 박막의 전기적인 특성의 경우, 플라즈마 처리 시간이 짧은 실리콘 옥시나이트라이드 박막의 경우 전압의 변화에 따라 공핍영역에서의 기울기가 현저히 감소하며 이는 플라즈마에 의한 계면 손상으로 계면결합 전하량이 증가에 기인한 것으로 판단된다. 또한, 전류-전압 곡선을 활용하여 측정한 터널링 메카니즘은 2.3 nm 이하의 두께를 가진 실리콘 옥시나이트라이드 박막은 직접 터널링이 주도하며, 2.7 nm 이상의 두께를 가진 실리콘 옥시나이트라이드 박막은 F-N 터널링이 주도하고 있음을 확인할 수 있다. 결론적으로 실리콘 옥시나이트라이드 박막을 활용하여 전기적으로 안정한 박막트랜지스터를 제작할 수 있었으며, 2.5 nm 두께를 경계로 터널링 메커니즘이 변화하는 특성을 이용하여 전하 주입 및 기억 유지 특성이 효과적인 터널링 박막을 증착하였고, 이를 바탕으로 다결정 실리콘 비휘발성 메모리 소자를 제작하였다.