• Journal of the Korea Concrete Institute
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• v.19 no.6
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• pp.677-684
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• 2007

This study investigates the failure mechanism of RC beams strengthened with GFRP (glass fiber reinforced polymer) sheets. After analyzing failure mechanisms, the various methods to prevent the debonding failures, such as increasing bonded length of GFRP sheets, U-shape wrappings and epoxy shear keys are examined. The bonded length of GFRP sheets are calculated based on the assumed bond strengths of epoxy resin. The U-shape wrappings are either adopted at the end or center of the CFRP sheets bonded to the beam soft. The epoxy shear keys are embedded to the beam soft to provide sufficient bond strength. The end U-wrappings and the center U-wrappings are conventional, while epoxy shear keys are new details developed in this study. A total six half-scale RC beams have been constructed and tested to investigate the effectiveness of each methods to prevent debonding failure of GFRP sheets. From the experimental results, it was found that increasing bonded length or end U-wrappings do not prevent debonding failure. On the other hand, the beams with center U-wrappings and shear keys reached an ultimate state with their sufficient performance. The center U-wrappings tended to control debonding of the longitudinal GFRP sheets because the growth of the longitudinal cracks along the edges of the composites was delayed. In the case of shear keys, it was sufficient to prevent debonding and the beam was failed by GFRP sheets rupture.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.65-74
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• 2013

The through-silicon via (TSV) technology is essential for 3-dimensional integrated packaging. TSV technology, however, is still facing several reliability issues including interfacial delamination, crack generation and Cu protrusion. These reliability issues are attributed to themo-mechanical stress mainly caused by a large CTE mismatch between Cu via and surrounding Si. In this study, the thermo-mechanical reliability of copper TSV technology is investigated using numerical analysis. Finite element analysis (FEA) was conducted to analyze three dimensional distribution of the thermal stress and strain near the TSV and the silicon wafer. Several parametric studies were conducted, including the effect of via diameter, via-to-via spacing, and via density on TSV stress. In addition, effects of annealing temperature and via size on Cu protrusion were analyzed. To improve the reliability of the Cu TSV, small diameter via and less via density with proper via-to-via spacing were desirable. To reduce Cu protrusion, smaller via and lower fabrication temperature were recommended. These simulation results will help to understand the thermo-mechanical reliability issues, and provide the design guideline of TSV structure.

• Elastomers and Composites
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• v.47 no.1
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• pp.2-8
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• 2012

In this study, in order to develop renewable bio-based nanocomposites, multi-functional nanocomposites from soybean resins (AESO, MAESO) and nanoclay were prepared. Photoelectrodes for environmental friendly dye-sensitized solar cell using soybean resin were also prepared. Organo-modified nanoclay was directly dispersed in functionalized soybean resins after mixing with styrene as a comonomer and radical initiator was used to copolymerize the nanocomposites. The observed morphology was a mixture of intercalated/exfoliated structure and the physical properties were improved by adding nanoclay. A nanocomposite using MAESO, which added COOH functional group to the soybean resin, showed better dispersibility than AESO composites. Ultrasonic treatment of the nanocomposites also improved the physical properties. Nanoporous $TiO_2$ photoelectrode was also prepared using soybean resins as a binder, after acid-treatment of $TiO_2$ surface using nitric acid. Dye-sensitized solar cells were prepared after adsorbing dye molecules on it. The $TiO_2$ photoelectrode prepared using soybean binder had high current density because of increased surface area by improved dispersibility. The photoelectrochemical properties and conversion efficiency of the solar cell were significantly improved using the soybean binder.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.80-80
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• 2010

전자제품의 소형화, 경량화, 고집적화가 심화됨에 따라 전자제품을 구성하는 회로의 미세화 또한 요구되고 있다. 이러한 요구는 경성회로기판 (rigid printed circuit board, RPCB) 뿐만 아니라 연성회로기판 (flexible printed circuit board, FPCB) 에도 적용되고 있으며 이에 대한 많은 연구 또한 이루어지고 있다. 연성회로기판은 일반적으로 절연층을 이루는 폴리이미드 (polyimide, PI)와 전도층을 이루는 구리로 이루어져 있다. 폴리이미드는 뛰어난 열적 화학적 안정성, 우수한 기계적 특성, 연속공정이 가능한 장점을 가지고 있으나, 고온다습한 환경하에서 높은 흡습성으로 인해 전도층을 이루는 구리와의 접합특성이 저하되는 단점 또한 가지고 있다. 또한 전도층을 이루는 구리는 고온다습한 환경하에서 산화 발생이 용이하기 때문에 접합특성의 감소를 야기할 수 있다. 따라서 본 연구에서는 고온다습한 조건하에서 sputtering and plating 공정을 통해 순수 Cr seed layer를 가지는 연성회로기판의 seed layer의 두께와 시효시간의 변화로 인해 발생하는 접합특성의 변화를 관찰하고 분석하였다. 본 연구에서는 두께 $25{\mu}m$의 일본 Kadena사(社)에서 제작된 폴리이미드 상에 sputtering 공정을 통해 순수 Cr으로 이루어진 각각 두께 100, 200, $300{\AA}$의 seed layer를 형성한 후 전해도금법을 이용, 두께 $8{\mu}m$의 구리 전도층을 형성한 시료를 사용하였다. 제작된 시료는 고온다습한 환경하에서의 접합 특성의 변화를 관찰하기 위하여 $85^{\circ}C$/85%RH 항온항습 조건하에서 각각 24, 72, 120, 168시간 동안 시효처리 한 후, Interconnections Packaging Circuitry (IPC) 규격에 의거하여 접합강도를 측정하였다. 시료의 전도층은 폭 3.2mm 길이 230mm의 패턴을 가지도록, 절연층은 폭 10mm, 길이 230mm으로 구성되었으며 이를 50.8mm/min의 박리 속도로 각 시편당 8회의 $90^{\circ}$ peel test를 실시하였다. 파면의 형상과 화학적 조성을 분석하기 위해 SEM (Scanning electron microscope)과 EDS (Energy-dispersive X-ray spectroscopy)를 사용하였으며, 파면의 조도 측정을 위해 AFM (Atomic force microscope)을 사용하였다. 또한 계면의 화학적 결합상태를 분석하기 위해 XPS (X-ray photoelectron spectroscopy)를 통해 파면을 관찰 분석하였다.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1078-1086
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• 1996

The peroxo-polytungstic acid was formed by the direct reaction of tungsten powder with the hydrogen peroxide solution. Peroxo-polytungstic powder were prepared by rotary evaporator using the fabricated on to ITO coated glass as substrate by dip-coating method using $2g/10mL(W-IPA/H_2O)$ sol solution. A substrate was dipped into the sol solution and after a meniscus had settled, the substrate was withdrawn at a constant rate of the 3mm/sec. Thicker layer could be built up by repeated dipping/post-treatment 15 times cycles. The layers dried at the temperature of $65{\sim}70^{\circ}C$ during the withdrawn process, and then tungsten oxides thin film was formed by final heating treatment at the temperature of $230{\sim}240^{\circ}C$ for 30min. A linear rotation between the thickness of thin film and the number of dipping/post-treatment cycles for tungsten oxides thin films made by dip-coating was found. The thickness of thin film had $60{\AA}$ after one dipping. From the patterns of XRD, the structure of tungsten oxides thin film identified as amorphous one and from the photographs of SEM, the defects and the moderate cracks were observed on the tungsten oxides thin film, but the homogeneous surface of thin films were mostly appeared. The electrochemical characteristic of the $ITO/WO_3$ thin film electrode were confirmed by the cyclic voltammetry and the cathodic Tafel polaization method. The coloring bleaching processes were clearly repeated up to several hundreds cycles by multiple cyclic voltammetry, but the dissolved phenomenon of thin film revealed in $H_2SO_4$ solution was observed due to the decrease of the current densities. The diffusion coefficient was calculated from irreversible Randles-Sevick equation from the data obtained by the cyclic voltammetry with various scan rates.