• Composites Research
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• v.22 no.3
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• pp.9-17
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• 2009

Nanoindentation behaviours on the films of softer Ag film/harder Cu substrate structure were studied by the molecular dynamics method. As a result, it was shown that the stiffness and hardness of films were strongly dependent on the thickness of films. The stiffness and hardness increased with the thickness of film within a critical range as an inverse Hall-Petch relation. The stiffness and hardness of Cu substrate with Ag film less than 5 nm were observed to be lower than those of bulk silver. In particular, the flower-like dislocation loop was created on the interface by the interaction between dislocation pile-up and misfit dislocation during the indentation of Ag film/Cu substrate with film thickness less than 4 nm, which seemed to be associated with the drop of load in the indentation load versus displacement curve.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.264-264
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• 2016

최근에 charge trap flash (CTF) 기술은 절연막에 전하를 트랩과 디트랩 시킬 때 인접한 셀 간의 간섭현상을 최소화하여 오동작을 줄일 수 있으며 낸드 플래시 메모리 소자에 적용되고 있다. 낸드 플래시 메모리는 고집적화, 대용량화와 비휘발성 등의 장점으로 인해 핸드폰, USB, MP3와 컴퓨터 등에 이용되고 있다. 기존의 실리콘 기반의 플래시 메모리 소자는 좁은 밴드갭으로 인해 투명하지 않고 고온에서의 공정이 요구되는 문제점이 있다. 따라서, 이러한 문제점을 개선하기 위해 실리콘의 대체 물질로 산화물 반도체 기반의 플래시 메모리 소자들이 연구되고 있다. 산화물 반도체 기반의 플래시 메모리 소자는 넓은 밴드갭으로 인한 투명성을 가지고 있으며 저온에서 공정이 가능하여 투명하고 유연한 기판에 적용이 가능하다. 다양한 산화물 반도체 중에서 비정질 In-Ga-Zn-O (a-IGZO)는 비정질임에도 불구하고 우수한 전기적인 특성과 화학적 안정성을 갖기 때문에 많은 관심을 받고 있다. 플래시 메모리의 고집적화가 요구되면서 절연막에 high-k 물질을 atomic layer deposition (ALD) 방법으로 적용하고 있다. ALD 방법을 이용하면 우수한 계면 흡착력과 균일도를 가지는 박막을 정확한 두께로 형성할 수 있는 장점이 있다. 또한, high-k 물질을 절연막에 적용하면 높은 유전율로 인해 equivalent oxide thickness (EOT)를 줄일 수 있다. 특히, HfOx와 AlOx가 각각 trap layer와 blocking layer로 적용되면 program/erase 동작 속도를 증가시킬 수 있으며 넓은 밴드갭으로 인해 전하손실을 크게 줄일 수 있다. 따라서 본 연구에서는 ALD 방법으로 AlOx와 HfOx를 게이트 절연막으로 적용한 a-IGZO 기반의 thin-film transistor (TFT) 플래시 메모리 소자를 제작하여 메모리 특성을 평가하였다. 제작 방법으로는, p-Si 기판 위에 열성장을 통한 100 nm 두께의 SiO2를 형성한 뒤, 채널 형성을 위해 RF sputter를 이용하여 70 nm 두께의 a-IGZO를 증착하였다. 이후에 소스와 드레인 전극에는 150 nm 두께의 In-Sn-O (ITO)를 RF sputter를 이용하여 증착하였고, ALD 방법을 이용하여 tunnel layer에 AlOx 5 nm, trap layer에 HfOx 20 nm, blocking layer에 AlOx 30 nm를 증착하였다. 최종적으로, 상부 게이트 전극을 형성하기 위해 electron beam evaporator를 이용하여 platinum (Pt) 150 nm를 증착하였고, 계면 결함을 최소화하기 위해 퍼니스에서 질소 가스 분위기, $400^{\circ}C$, 30 분의 조건으로 열처리를 했다. 측정 결과, 103 번의 program/erase를 반복한 endurance와 104 초 동안의 retention 측정으로부터 큰 열화 없이 메모리 특성이 유지되는 것을 확인하였다. 결과적으로, high-k 물질과 산화물 반도체는 고성능과 고집적화가 요구되는 향후 플래시 메모리의 핵심적인 물질이 될 것으로 기대된다.

• Applied Microscopy
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• v.30 no.4
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• pp.337-345
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• 2000

Introduction of the buffer layer and the nitridation of a sapphire substrate were one of the most general methods employed for the reduction of lattice defects in GaN thin films Brown on sapphire by MOCVD. In an effort to improve the initial nucleation and growth condition of the GaN, reactive ion beam (RIB) of nitrogen treatment of the sapphire surface has been attempted. The 10 nm thick, amorphous $AlO_xN_y$ layer was formed by RIB and was partially crystallized alter the main growth of GaN at high temperature, leaving isolated amorphous regions at the interface. The beneficial effect of amorphous layer at interface in relieving the thermal stress between substrate and GaN film was examined by measuring the lattice strain value of the GaN film grown with and without the RIB treatment. Higher order Laue zone pattern (HOLZ) of $[\bar{2}201]$ zone axis was compared with simulated patterns and lattice strain was estimated It was confirmed that the great reduction of thermal strain was achieved by RIB process and the amount of thermal stress was 6 times higher in the GaN film grown by conventional method without the RIB treatment.

• Membrane Journal
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• v.28 no.1
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• pp.55-61
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• 2018

With vigorous development of petroleum and chemical industry, emission of carbon dioxide has attracted tremendous attention globally due to global warming problem and abnormal climate change. To address these problems, in this study, a PEGBEM-g-POEM graft copolymer with high $CO_2$ affinity was synthesized and $CaCO_3$ was incorporated to form mixed matrix membranes (MMMs) for enhancement of $CO_2$ permeance. By varying the addition weight of $CaCO_3$ in MMMs, high separation performance of $CO_2$ over $N_2$ was obtained. At 50 wt% loading of $CaCO_3$, the greatest separation performance was obtained with an enhanced $CO_2$ permeance from 22.5 to 28.16 GPU and slightly increased $CO_2/N_2$ selectivity from 44.7 to 45.42. It resulted from the increased $CO_2$ solubility of MMMs due to specific interaction between $CaCO_3$ and $CO_2$ molecules. Upon excess loading of $CaCO_3$, MMMs exhibited loss of $CO_2$ separation performance due to the formation of interfacial defects. Based on this result, it is considered that the proper addition of $CaCO_3$ is crucial for improvement of $CO_2$ separation performance.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.52-60
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• 2018

In the automobile industry, in order to increase the fuel efficiency and conform to the safety regulations, it is necessary to make the vehicles as light as possible. Therefore, it is crucial to manufacture dual phase steels, complex phases steels, MS steels, TRIP steels, and TWIP from high strength steels with a tensile strength of 700Mpa or more. In order to apply ultra-high tensile strength steel to the body, the welding process is essential. Resistance spot welding, which is advantageous in terms of its cost, is used in more than 80% of cases in body welding. It is generally accepted that ultra-high tensile strength steel has poor weldability, because its alloy element content is increased to improve its strength. In the case of the resistance spot welding of ultra-high tensile steel, it has been reported that the proper welding condition area is reduced and interfacial fracture and partial interfacial fracture occur in the weld zone. Therefore, research into the welding quality judgment that can predict the defect and quality in real time is being actively conducted. In this study, the dynamic resistance of the weld was monitored using the secondary circuit process variables detected during resistance spot welding, and the factors necessary for the determination of the welding quality were extracted from the dynamic resistance pattern. The correlations between the extracted factors and the weld quality were analyzed and a regression analysis was carried out using highly correlated pendulums. Based on this research, a regression model that can be applied to the field was proposed.

• Elastomers and Composites
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• v.48 no.3
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• pp.216-220
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• 2013

The phase separation in Wood Flour-Polymer Composite (WPC) was investigated and the reasons for change in mechanical properties with the content of wood flour were explored. The wood flour-polypropylene composite samples with different wood flour contents were prepared. From differential scanning calorimetry (DSC) thermograms of WPC samples, the trend of crystallinity and melting temperature ($T_m$) were analyzed. The crystallinity and melting temperature increased and then decreased as the content of wood flour increased. From these results, it was confirmed that at the low wood flour content the wood flours were dispersed into the polypropylene matrix but at the high wood flour content, the phase separation between polymer and wood flour phases appeared. The tensile strength of WPC samples was continuously decreased with the increase of wood flour content. At a low wood flour content, the low interfacial bonding and the decrease in crystallinity were the main reasons for the decrease in tensile strength with the increase of wood flour content. At a high wood flour content, the decrease in tensile strength resulted from the interfacial defects between the polymer and wood flour phases. The impact strength of the WPC sample showed the maximum behavior with the content of wood flour. At a low wood flour content, the impact strength was enhanced owing to the decrease in brittleness, which results from the decrease in crystallinity. At a high wood flour content, however, the impact strength decreased due to phase separation.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.106-106
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• 1999

반도체 소자가 소브마이크론 이하로 집적화 되어감에 따라, RC 신호 지연 및 간섭 현상, 전력 소비의 증가 문제가 심각하게 대두되고 있다. 이러한 문제를 개선하기 위해서는, 현재 층간 절연막으로 상용화되어 있는 SiO2 박막을 대체할 저유전율 박막의 개발이 필수적이며, 많은 연구자들이 여러 가지 새로운 유기물질과 무기물질은 제안하고 있다. 반도체 공정상의 적합성을 고려할 때, 이들 여러물질 중에서 알킬기를 함유한 SiO2 박막(이하 'Si-O-C-H 박막'으로 표기)에 많은 관심이 집중되고 있다. Si-O-C-H 박막은 알킬기에 의해 형성된 나노 스케일의 기공에 의해 작은 유전율을 가지게 된다. 따라서, 박막내의 알킬기의 함유량이 많을수록 보다 작은 유전율을 얻을 수 있다. 그러나 과다한 알킬기의 함유는 Si-O-C-H 박막의 열적 특성을 열화시키는 부정적인 효과도 있다. 본 연구에서는 bis-trimethylsilylmethane(BTMSM, H9C3-Si-CH2-Si-C3H9) precursor를 이용하여 Si-O-C-H 박막을 증착하였다. BTMSM precursor의 중요한 특징중 하나는, 두 실리콘 원자 사이에 Si-CH2 결합이 존재한다는 사실이다. Si-CH2 결합은 양쪽의 Si에 의해 강하게 결합되어 있어서, BTMSM precursor를 사용하여 Si-O-C-H 박막은 유전상수도 작을 뿐 아니라, 열적으로도 안정된 특성이 얻어질 것으로 기대된다. Si-O-C-H 박막의 열적 안정성을 평가하기 위하여, 고온 열처리 전후의 FT-IR 스펙트럼 분석과 C-V(capacitance-voltage) 측정에 의한 유전상수 변화를 살펴보았다. 또한 증착된 박막의 미세구조 및 step coverage 특성 관찰을 위하여 SEM(scanning electron microscopy) 및 TEM(transmission electron micfroscopy) 분석을 하였다. 변화하였으며 이는 포토루미네슨스의 변화의 원인으로 판단된다. 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.phology 관찰결과 Ge 함량이 높은 박막의 입계가 다결정 Si의 입계에 비해 훨씬 큰 것으로 나타났으며 근 값도 증가하는 것으로 나타났다. 포유동물 세포에 유전자 발현벡터로써 사용할 수 있음으로 post-genomics시대에 다양한 종류의 단백질 기능연구에 맡은 도움이 되리라 기대한다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.51-66
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• 1994

Y3Al5O2 and Nd: Y3Al5012 single crystals were grown by Czochralskl technique. The effectt of pulling rate rotation rate, and doping level of Nd3+ ion on the crystal quality were studied Various types of defects were analysed by photo-elastic effect and chemical etching method Finally, spectroscopic and laser poputies of grown crystal were measured. Optirmum pulling rate for good quality was dependant on the doping level of Nd3+ ion. It was found that the suitable pulling rates for pure Y3Al5O12 for 3.0∼3.5 a/o Nd3+ ion doped Y3Al5012 and for more than 40 a/o Nd3+ ion doped Y3Al5012 were 2∼4mm/hr, 0.6∼0.5mm/hr, and less than 0.4mm/hr respectively. Solid-liquid interface was convex at the rotation rate of 27∼60rpm, and concave at the rotation rate of 80∼100rpm. Growth axis was confired to <111> direction and lattice parameter was measured to 12.017A. Core (211) facets,striations, inclusions of metal particles, dislocations and optical inhonngeneities were detected. Four level laser transition of Nd3+ion in YIAls012 single crystal were identified by the spectroscopic measurements. Laser rod with tam diameter and 63mm length was fabricated from grown Nd3+ Y3Al5012 sin91e crystals. 1.8lJ of lasing threshould and 0.49% of soope efficiency were measured by the Pulsed laser action.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.63-68
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• 2007

A number of process problems should be solved in the multi-layered ceramic devices such as EMI filter. In particular, it is essential to control the sintering shrinkage in co-firing of different materials for obtaining defect-free samples such as crack, camber, and delamination which usually occur near the surface and interface. We studied the effect of the powder properties of ferrite on the co-firing behavior of green ceramic layers composed of ferrite and varistor. Three kind of ferrite powder samples as a function of milling time (24, 48, and 72 hr) were prepared. Varistor and ferrite ceramic green sheet were made by means of doctor blade process using slurry (ceramic powder and binder solution). Here, slurry was prepared by mixing 55 wt% powder with 45wt% binder solution. Varistor and ferrite green sheets were laminated at $80 kg/cm^2$, and co-fired at $900^{\circ}C$ and $1000^{\circ}C$ for 3 hr. We obtained the camber-free and co-fired ferrite/varistor layer structure by controlling the milling time and sintering temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.21-32
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• 1994

$CaF_2$ crystals were grown with various growth rates by Bridgman method, and the electrical properties of these were studied to examine the changes of ionic conductivities with growth rates by AC Impedance Analyzer. As the growth rates were higher, $CaF_2$ crystals were grown to polycrystals from single crystal. And as grain boundaries and various defects were altered, the ionic conductivities were changed dramatically. $YF_3$ added to $CaF_2$ for disorderizing $CaF_2$ structure and improving the number of $F^-$ carriers and vacancies in $CaF_2$ crystals. Then $Ca_{1-x}Y_XF_{2+X}$ crystals were gained. And the ionic conductivities of $Ca_{1-x}Y_XF_{2+X}$ crystals were investigated with $YF_3$ addition. The ionic conductivities of $CaF_2$ and $Ca_{1-x}Y_XF_{2+X}$ crystals with temperatures were compared. In addition, the effects of clusterings and defects on the electrical properties of solid electrolytes were researched.