• Polymer(Korea)
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• v.27 no.3
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• pp.169-175
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• 2003

Pyrophosphoric lactone modified polyester (PATT) containing two phosphorous functional groups in one unit structure was synthesized to prepare a non-toxic reactive flame-retardant coatings. Then the PATT was cured at room temperature with isocyanate, toluene diisocyanate-isocyanurate , to get a two-component polyurethane flame-retardant coatings (PIPUC). Comparing physical properties of the films of PIPUC with those of film of non-flame-retardant coatings, there was no deterioration observed in physical properties by the introduction of a flame-retarding component into the resin. We found that the char lengths measured by 45$^{\circ}$ Meckel burner method were 3.1∼4.4 cm and LOI values recorded 27∼30%. These results indicate that the coating prepared in this study is a good flame-retardant. The surface structure of coatings investigated with SEM does not show any defects and phase separation.

• The Journal of the Korean bone and joint tumor society
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• v.19 no.2
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• pp.74-77
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• 2013

The guidelines for the treatment of massive bone defects caused by bone resection due to tumors have changed from amputation to limb salvaging surgery. Limb salvaging surgery using endoprotheses is a well-established procedure. However, Aseptic loosening, infection, and mechanical defect remain significant problems. Among them, we experienced the case with a breakage of polyethylene lock of MUTARS$^{(R)}$ distal femur tumor Endoprostheses.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.8 no.3
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• pp.96-104
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• 1983

In wire transmission systems using a coaxial cable or cable pair, the cable loss caused by the transmission characteristic of the cable varies depending on the length of the cables or variation in the ambient temperature, and usually takes the form close to a $\sqrt f$ characteristic. In order to compensiate for such loss, an actove variable automatic equalizer with a tandam combination of feedback and feedforward was presented. The automatic equalizer to be described here overcomes many of the disadbantages associated with the conventional passive variable equalizers, which include the need for inducters, a complex design procedure, and incompatibility with modern dldctronic control systems that are very complicated. This design has advanatges over other active variable equalizer design and it is especially applicable to precision equalization at frequencies bellow 1MHz.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.36.1-36.1
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• 2011

1차원 양자 구속 효과로 인해 우수한 전하 전송 특성을 갖는 나노선을 차세대 전자소자에 응용하기 위한 일환으로, 실리콘 기판 상에 동일한 실리콘 나노선을 성장하고 이의 미세구조 특징을 분석하였다. 실리콘 나노선은 Au 시드층을 형성한 후 화학기상증착법을 이용한 VLS (vapor-liquid-solid) 공법으로 성장시켰으며, 시드층의 크기에 따른 나노선의 구조 특성을 이미지 프로세싱을 통해 통계분석하였다. 성장된 실리콘 나노선의 결정구조와 성분을 고해상도 투과전자현미경과 EDAX를 이용하여 분석하였으며, 성장 온도 조건에 따른 나노선의 morphology 특성도 실시하였다. 그 결과 Au 시드층의 성분이 나노선과 기판의 계면에서 상당 부분 잔류함과, 성장된 나노선에는 쌍정 결함(twin defect) 등의 결정구조 변화가 수반됨을 알 수 있었다. 또한 금속 시드층의 평균 입도와 성장 온도 및 소스 가스 유량 조절함으로써 실리콘 나노선의 직경과 길이를 최적화 할 수 있었다. 이를 통해 향후 공정 스케일 다운의 한계 상황에 도달하고 있는 반도체 트랜지스터 소자를 대체할 수 있는 나노선 반도체 소자에 대한 공정기술 개발과 이를 이용한 다양한 응용 분야도 동시에 제시할 수 있게 되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.057-58
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• 1995

극소전자 디바이스의 고집적화에 의해 박막배선의 선폭은 0.5$mu extrm{m}$ 이하로 축소되고 있고 상대적으로 높은 전류밀도가 흐르게 된다. 높은 전류밀도하에서는 현재 일반적으로 사용되고 있는 Al을 기본으로 하는 박막배선에서의 electromigration에 의한 결함 발생 그리고 비교적 낮은 전기전도도가 심각한 문제점으로 제기된다. 본 연구에서는 Al과 고전기전도도 물질인 Ag, Cu, 그리고 Au 박막배선에 대해 electromigration에 대한 저항성, 즉 activation energy를 측정 비교함으로써 차세대 극소전자 디바이스를 위한 박막배선재료로서의 가능성을 알아보고자 한다. Electromigration test 및 activation energy를 구하기 위해 순수 Ag, Cu, Al, Au 박막배선을 0.05$\mu\textrm{m}$ 두께, 100$\mu\textrm{m}$ 선폭, 그리고 5000$\mu\textrm{m}$ 길이로 SiO2 열산화막 처리된 pp-Si(100) 기판 위에 진공 증착시켰다. 가속화 실험을 위해 인가된 d.c. 전류밀도는 2$\times$106A/$ extrm{cm}^2$ 이었고, Al과 Au에서는 6$\times$106A/$\textrm{cm}^2$이었다. 실온에서 24$0^{\circ}C$까지의 온도범위에서 d.c.인가후의 저항변화를 측정하여 Median-Time-to-Failure(MTF)를 구한 후 Black 방정식을 이용하여 activation energy를 측정하였다. Activation energy는 Cu가 1.34eV로서 가장 높게 나타났고 Au가 1.01eV, Al이 0.66eV, Ag가 0.29eV의 순으로 측정되었다. 따라서 Cu와 Au 박막배선의 경우 Al보다 electromigration에 대한 저항력이 강한 고활성화에너지 특성을 갖는 고전기전도도 재료로서 차세대 극소전자 디바이스를 위한 대체 박막배선재료로서의 가능성을 보인다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.12C
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• pp.1157-1164
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• 2006

In this paper, we proposed a method for measuring accurate positions and sizes of package and balls in a micro BGA. To find defects of BGA accurately, we focused on finding positions of package and balls. After labeling, we detected connected components of package and balls using feature parameters. After the detection of package component, we measured position and size of package by employing rectangular model which was constructed by the package information. After the detection of the ball components, we measured positions and diameters of balls by employing circular models which were constructed by the ball informations. We did calibration based on landmarks to measure real length, and we compared the measured results with the SEM data. Finally, we found that the accuracy of the proposed method is 94% in terms of ball's radius.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.37-45
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• 1998

In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

• Tunnel and Underground Space
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• v.17 no.5
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• pp.337-349
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• 2007

Yearly, it seems the fact that the numbers of tunnels with wide sections are on the rise as the length of tunnel and number of lanes continues increasing. According to these trends, well-schemed plans of design, construction and management related with tunnel safety has become to be crucial. It is a high possibility to be observed by the fact that the direct effects of casualties and property damages are caused by the situations of car collisions, bump to solid structures by careless driving and the outbreak on vehicles by mechanical fault. Therefore, in order to prevent these types of accidents, we would make issues md adopt appropriate mechanical and management plans of emergency exits and disaster prevention equipments inside of tunnel, based on up-to dated experiences and study of foreign cases, to structural design technology. The objectives of this study are to recognize related actual problems and suggest improvement plans.

• Journal of Institute of Control, Robotics and Systems
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• v.8 no.1
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• pp.37-45
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• 2002

A method of measuring the length of defects on the wall and restructuring the defect image is proposed based on the estimation algorithm of a camera orientation, which uses the declination angle of a laser slit beam. The estimation algorithm of the horizontally inclined angle of CCD camera adopts a 3-dimensional coordinate transformation of the image plane where both the laser beam and the original image of the defects exist. The estimation equation is obtained by using the information of the beam projected on the wall and the parameters of this equation are experimentally obtained. With this algorithm, the original image of the defect can be reconstructed as an image normal to the wall. From the result of a series of experiments, the measuring accuracy of the defect is measured within 0.5% error bound of real defect size under 30 degree of the horizontally inclined angle. The proposed algorithm provides the method of reconstructing the image taken at any arbitrary horizontally inclined angle as the image normal as the wall and thus, it enables the accurate measurement of the defect lengths by using a single camera and a laser slit beam.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.289.2-289.2
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• 2014

본 연구에서는 전기증착법 정전류 방법으로 ITO 유리기판 위에 ZnO 나노막대를 성장하였다. 성장 매개 변수로 용액 농도, 전착 전류, 용액 온도 및 성장 시간으로 하였고, 성장된 ZnO 나노막대는 field-emission scanning electron microscopy, X-ray diffractometer, photoluminescence를 이용하여 구조적, 광학적 특성을 분석하였다. 모든 시료에서 ZnO 나노막대는 wurtzite 형태의 결정 구조를 가지고, c-축 배향성을 나타내는 강한 ZnO(002) 회절피크가 나타났다. 용액 농도와 전착 전류가 감소함에 따라 ZnO 나노막대의 밀도 및 직경이 감소하였다. 또한, ZnO 나노막대는 성장 온도가 증가함에 따라 직경이 줄어들었고, 성장 시간이 증가함에 따라 ZnO 나노막대의 길이는 늘어났다. 모든 ZnO 나노막대 시료는 자유 엑시톤 재결합에 의해서 3.18 eV, 산소공공에 의한 결함에 의해서 2.32~1.86 eV의 피크가 관찰되었다. ZnO 나노막대의 직경이 작아질수록 NBEE 피크의 세기가 감소하고, 용액의 농도가 증가함에 따라 NBEE 피크는 청색편이 하였다.