• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.255-262
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• 1998

This study investigated the crystallization behaviour of sealing amorphous material heat-treated by conventional and microwave heating source. From X-ray diffraction and SEM analyses, it was shown that microwave heat-treated sample had well-grown $PbTiO_3$crystals and the high degree of crystallinity inspite of its heat-treated condition of shorten time and lower temperature as compared with a conventionally heat-treated sample. It was assumed that microwaves inhibit the nucleation of $PbTiO_3$crystal in nucleation stage, but promote the growth of $PbTiO_3$crystal above the critical size of crystal due to enhanced diffusion effect within the sample.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.34-45
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• 1991

The fundamental conditions for growing $r-6Bi_2O_3{\cdot}GeO_2$ (BGO) single crystal plates by EFG (Edge -defined Film-fed Growth) method, were investigated and the characterization, quality test were carried out for obtained BGO single crystal plates. The optimum growing conditions determined in this study were as follows: ${\cdot}$ temperature gradient: 22^{\circ}C/cm

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.190-195
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• 2002

NaX zeolite crystals of a uniform particle size of 50 $\mu$m were grown by continuous crystallization method from seed crystals (10~20 $\mu$m) added into a 0.5~2.0 g mother liquor having a composition $3.5Na_2O : Al_2O_3: 2.1SiO_2: 1000H_2O$. In order to investigate the crystal growing by continuous method, the mother solution was supplied after 7 days, 5 days, 3 days and 1 day, respectively. The seeding resulted in an increase in the fraction of large crystals compared with unseeded batches and successfully led to an uniform NaX zeolite crystal. It was postulated that the seeding in the synthesis mixture leaded out increase of surface area for physical contact reaction and directed growth of seed crystal without the nucleation in the synthesis gel.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.236-237
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• 2000

용액인상법에 의하여 Cr$^{3+}$ 이온이 0.1-0.2% 주입된 Alexandrite (Cr$^{3+}$ :BeAl$_2$O$_4$) 단결정을 성장하고, 성장한 단결정을 이용하여 레이저 소자를 제조하였다. 고품질의 단결정을 성장할 수 있는 결정성장조건을 규명하고, Cr$^{3+}$ 이온의 유효편석 계수를 계산하였으며, 결정 결함 및 분광 물성을 조사하였다. 결정성장 실험 결과, 유속 3 1/min의 질소분위기, 이리듐 도가니 및 <001>방위의 Alexandrite 단결정을 종자결정으로 사용하여 결정을 성장하는 경우 최적의 결정성장 조건은 인상속도 0.5-1.0 mm/hr와 회전속도 20-25 rpm이었다. 육성된 결정은 (100)면이 넓게 발달되었으며, (120)과 (010)면이 측면에 발달되는 판상의 직팔각기둥의 형태로 성장되었다. 결정결함으로써 parasite crystal의 형성과 경계면의 균열, striation, inclusion 등이 검출되었다. Alexandrite 단결정 내에 분포하는 Cr$^{3+}$ 이온의 유효편석계수 k$_{eff}$는 2.8로 계산되었다. 분광물성으로써 실온에서의 $^4$A$_2$$\longrightarrow$$^4$T$_2$(689.6-489.3 nm), $^4$A$_2$$\longrightarrow$$^4$T$_1$(489.3-311.33m) 천이에 의한 흡수를 확인하고, $^4$T$_2$$\longrightarrow$$^4$A$_2$(650-800 nm), $^2$E$\longrightarrow$$^4$A$_2$에 의한 nophonon line R$_1$, R$_2$(680.4, 678.5 nm) 및 $^2$T$_1$$\longrightarrow$$^4$A$_2$(655.7, 649.3, 645.2 nm)의 형광방출 스펙트럼을 얻었으며, 형광수명은 0.264 ms로 조사되었다. 제조된 레이저 발진봉은 직경 6.3 m, 길이 45 nm이었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.44-49
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• 1995

Abstract The surface of 6H - SiC bulk crystal grown by sublimation process was investigated by optical microscope observation. Since, in the 6H crystal growing, the crystal had the habitual step growth attitude such that the lateral growth rate along the random a - axis orientation was higher than that along the c - axis of the growth direction, then many steps were developed. There were, also, many micropipes on the surface in the form of as-like large voids. However, they were differenciated with pores and cross- sectional shape of them were close to the circle. In this study, many micropipes, planar defects and the growth steps appeared on the grown crystal surface were investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.349-358
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• 1997

meta-Nitroaniline(mNA) crystals were grown from the supercooled melt for the first time. A seed was introduced into the purified mNA melt of 100 ml 0.1 K above the melting temperature ($T_m$ : $112.0^{\circ}C$) and crystal was grown at constant supercooling of 0.1 K. The melt was stirred . mechanically and the crystal was also rotated while the growth proceeds. mNA crystals of size up to $20{\times}15{\times}15 \textrm {mm}^3 and of very high perfection could be grown for the period of one day. The bottom half of the crystal faces are well-faceted and covered by {111} and {021} faces, while the faces of the top half are not well defined. The overall crystal morphology was characterized by the unidirectional growth along one of the polar axes. The absolute direction of preferred growth was determined to be [001] by the pyroelectric measurements. The perfection of the crystal was characterized by synchrotron X-ray topography and optical characterization was made by measuring second harmonic conversion efficiency.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.560-566
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• 1997

Dislocation behavior in the ZnSe crystal grown by seeded vapor transport was investigated. Etch pit shape with the ZnSe plane and dislocation arrangement were shown. Also the variation of the dislocation density in the crystal was disclosed. The dislocation density along the lateral growth direction was not changed but the dislocation density along the vertical growth direction was reduced as the crystal grew. The average dislocation density of the grown crystal was $4{\times}10^4 /\textrm{cm}^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.84-88
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• 1999

The behavior of oxygen precipitation was investigated in radial direction using Si wafers with different vacancy-related defects generation area. The behavior of oxygen precipitation in radial direction is strongly dependent on the size of vacancy rich area which is related with crystal growth condition. Oxygen precipitation rate is more enhanced in vacancy rich area than that of interstitial rich area. And anomalous oxygen precipitation is generated in the marginal bands of vacancy and interstial area. In V/I boundary, however, oxygen precipitation is suppressed to nearly perfect.

• Korean Journal of Crystallography
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• v.10 no.1
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• pp.76-82
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• 1999

융액인상법에 의하여 Garnet 구조내 결정학적 8면체 및 4면체의 양이온 자리에 전하 보상이온 Mg2+, 구조 수식이온 Sc3+ 및 laser 활성이온 Cr4+을 다양한 농도로 주입한 융액으로부터 Cr4+:YAG 단결정을 성장하고, 주입된 불순이온이 흡수계수에 미치는 영향을 규명하였다. 양질의 단결정을 성장하기 위한 인상속도와 회전속도는 각각 1.5 mm/h와 10 rmp이었으며, Cr4+:YAG 단결정은 <111> 방위로 성장하였다. 성장된 결정의 결정구조 동정 및 결정격자 상수를 측정하고, 1.064 ㎛에서의 결정화분율에 따른 흡수계수, 형광방출 스펙트럼, 유효편석계수(keff)를 보고하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.50-59
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• 1995

Abstract 6 H - SiC single crystal was grown by sublimation growth system which was self - designed and manufactured. In order that the SiC source might be decomposited and sublimed and deposited on the 6H - seed substrate grown by Acheson method, the temperature gradient, the growth parameters of growth temperature and pressure were operately adjusted. So we could get the optimum temperature gradient inside of the crucible. The graphite crucible with SiC powder and thermal shield componants were purified at the elevated temperature by means of Ar purging process and the source baking, then it distributed to reduce the amount of the impurities come from those parts. It was recognized that the optimum growth temperature of the crucible was$2300~2400^{\circ}C$ at the Ar atmospheric pressure of 200~400 torr, and at that moment the growth rate was 500~1000 $\mu\textrm{m}$. And then, the as- grown crystal was cut with the wafer form, the evaluation about the crystal was carried out by XRD, the optical microscopic observation and FT IR spectrum measurement.