• Title/Summary/Keyword: 결정성장속도

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Growth of zincite(ZnO) single crystal by hydrothermal method (수열법에 의한 산화아연(ZnO) 단결정 성장)

  • 이영국;유영문
    • Korean Journal of Crystallography
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    • v.7 no.2
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    • pp.183-190
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    • 1996
  • Single crystals of ZnO were grown hydrothermally with KOH solution in silver lined autoclave. The effect of LiOH and NH4OH on the morphology of as-grown crystals was studied. As-grown crystals were pale green and the maximum size was 30×30×20mm3. Addition of LiOH reduced the density of flaws on the (0001) face of as-grown ZnO crystals. In highly concentrated KOH solution, ZnO had a strong tendency to grow along the c-axis. When 1.0-2.0 M of NH4OH was added into mineralizer, growth rate along the direction of a-axis increased. From this result, ZnO single crystals of equant-faced hexagonal prism could be grown with acicular seeds.

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Float Zone Growth of Superconduction $Bi_2Sr_2CaCu_2O_8$ Fiber with Halogen Lamp (할로겐 램프 열원을 이용한 초전도성 $Bi_2Sr_2CaCu_2O_8$ Fiber의 Float Zone 성장)

  • 김철진;정준기
    • Korean Journal of Crystallography
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    • v.7 no.2
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    • pp.147-155
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    • 1996
  • Floating Zone Image furnace with halogen lamps as heat source has been made and applied to the growth of high-Tc superconductor Bi2Sr2CaCu2O8. The manufactured crystal growth equipment is composed of holder unit for setting the halogen lamps at the focal point of the elliptical mirror, image furnace with maximum temperature of 1800℃ with 1kW halogen lamps, cooling unit, feeding unit for supplying source material to the molten zone, pulling unit for crystal growth, and the control unit in the range of 2mm/hr -40 mm/hr vertical movement and 15rpm - 12rpm rotation. Bi2Sr2CaCu2O8 fibers have been grown with 300W halogen lamps and characterized with XRD, SEM and EDS. The growth condition was air atmosphere, growth speed 3∼4mm/hr, rotation speed of upper and lower part 20∼25 rpm. The fiber was composed of 20∼25 rpm matrix phase and secondary phases such as (Sr,Ca)CuO2 and (Sr,Ca)2CuO3.

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$Cr^{3+} :BeAl_2O_4$ 레이저 단결정 성장 및 $Cr^{3+}$이온의 특성

  • ;A.Yu.Ageyev
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.236-237
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    • 2000
  • 용액인상법에 의하여 Cr$^{3+}$ 이온이 0.1-0.2% 주입된 Alexandrite (Cr$^{3+}$ :BeAl$_2$O$_4$) 단결정을 성장하고, 성장한 단결정을 이용하여 레이저 소자를 제조하였다. 고품질의 단결정을 성장할 수 있는 결정성장조건을 규명하고, Cr$^{3+}$ 이온의 유효편석 계수를 계산하였으며, 결정 결함 및 분광 물성을 조사하였다. 결정성장 실험 결과, 유속 3 1/min의 질소분위기, 이리듐 도가니 및 <001>방위의 Alexandrite 단결정을 종자결정으로 사용하여 결정을 성장하는 경우 최적의 결정성장 조건은 인상속도 0.5-1.0 mm/hr와 회전속도 20-25 rpm이었다. 육성된 결정은 (100)면이 넓게 발달되었으며, (120)과 (010)면이 측면에 발달되는 판상의 직팔각기둥의 형태로 성장되었다. 결정결함으로써 parasite crystal의 형성과 경계면의 균열, striation, inclusion 등이 검출되었다. Alexandrite 단결정 내에 분포하는 Cr$^{3+}$ 이온의 유효편석계수 k$_{eff}$는 2.8로 계산되었다. 분광물성으로써 실온에서의 $^4$A$_2$$\longrightarrow$$^4$T$_2$(689.6-489.3 nm), $^4$A$_2$$\longrightarrow$$^4$T$_1$(489.3-311.33m) 천이에 의한 흡수를 확인하고, $^4$T$_2$$\longrightarrow$$^4$A$_2$(650-800 nm), $^2$E$\longrightarrow$$^4$A$_2$에 의한 nophonon line R$_1$, R$_2$(680.4, 678.5 nm) 및 $^2$T$_1$$\longrightarrow$$^4$A$_2$(655.7, 649.3, 645.2 nm)의 형광방출 스펙트럼을 얻었으며, 형광수명은 0.264 ms로 조사되었다. 제조된 레이저 발진봉은 직경 6.3 m, 길이 45 nm이었다.

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Effects of Crystal Structure in Electroless Cu film for Semi-Additive Process on Chemical Etching Rate (Semi-Additive Process용 초박형 무전해 구리 피막의 결정구조가 에칭속도에 미치는 영향)

  • Lee, Chang-Myeon;Heo, Jin-Yeong;Lee, Hong-Gi
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.05a
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    • pp.178-178
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    • 2015
  • SAP 씨앗층용 구리필름에 대한 결정구조와 에칭속도의 상관관계를 알아보았다. 그 결과, 저지수 면보다는 고지수면이 우선적으로 성장되어 있는 구리피막이 높은 에칭속도를 나타내었다. 이와 같은 우선결정방위와 에칭속도의 관계를 결정구조적인 관점에서 해석하였다.

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Growth kinetics and pattern formation of ice dendrites at small subcoolings (작은 과냉각 상태에서 ice dendrite의 결정 성장 특성)

  • 구기갑
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.3
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    • pp.197-208
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    • 1995
  • An experiment study of the dendrite growth of ice crystals growing in quiescent pure subcooled water was made at small subcoolings of 0.035 K < ${\Delta}T$ < 1.000 K. It was observed that the growth kinetics and morphology are functions of not only subcooling but also thermal convection. When the subcooling is less than 0.35K, it was found that effect of thermal convection on growth kinetics of ice dendrites becomes important. Quantitiative measurements of growth velocity, $V_{G}$, and tip radii of the edge and basal planes, $R_{1}$ and $R_{2}$, were made simultaneously as a function of subcooling.

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Crystallization of Benzene from Benzene-Cyclohexane Mixtures by Layer Melt Crystallization - Phenomena of Impurity Inclusion in Crystal - (경막형 용융결정화에 의한 벤젠-사이클로헥산 혼합물로부터 벤젠의 결정화-결정의 불순물 내포현상-)

  • Kim, Kwang-Joo;Lee, Jung-Min;Ryu, Seung-Kon
    • Applied Chemistry for Engineering
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    • v.8 no.3
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    • pp.389-394
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    • 1997
  • The distribution of impurity included in benzene layer crystal was explored in layer crystallization of cyclohexane and benzene mixtures. The influence of crystal growth rate on crystal purity was investigated. All experimental results for bezene-cyclohexane system obtained in layer crystallizer have been evaluated with the criterion of Wintermantel. The purity of crystal decreases with increasing degree of subcooling, decreasing feed concentration and increasing crystal growth rate. The crystal growth rate was a key parameter to determine the inclusion of impurity in crystals. The results obtained from runs performed at increasing crystallization time(i.e. crystal thickness) have clearly shown that migration of inclusions within crystal layer to the melt, leading to the removal of impurity occurs. The diffusion of impurity which takes place during the crystallization from the beginning, enhances a further purification of the crystal layer if that underwent a thermal gradient after growth of the layer crystal stops.

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Morphological study on non-seeded grown AlN single crystals (무종자결정 상에 성장된 AlN 결정의 형태학적 연구)

  • Kang, Seung-Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.6
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    • pp.265-268
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    • 2012
  • The growth of AlN single crystals of large size and good quality is of prime importance for UV LEDs and power devices applications. However, the crystals having the size of more than 1 inch and high quality have not been reported in the world. In the PVT growth of AlN, the crystal morphology of as grown were important because the preferred orientation of growth of it was evaluated for growth rate increase. In the present study, the AlN single crystals grown by PVT process were evaluated by the side of the growth morphology. Optical microscopic characterization was carried out to observe the shape of the crystals and the growth facets. Furthermore the growth habit of it were discussed by observation of the surface of AlN crystals.

Crystallization Characteristics of Metallocene Low Density Polyethylene/Low Density Polyethylene Blends (메탈로센 선형 저밀도 폴리에틸렌/선형 저밀도 폴리에틸렌 블렌드의 결정화 거동)

  • 김경룡;한정우;강호종
    • Polymer(Korea)
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    • v.25 no.6
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    • pp.840-847
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    • 2001
  • The crystallization characteristics of metallocene linear low density polyethylene (m-LLDPE)/linear low density polyethylene (LLDPE) blends were investigated. The effect of blending on the induction time for crystallization, spherulites growth rate, and maximum size of spherulites was mainly considered in this study. The formation of separate crystal which is well known crystallization behavior in LLDPE/LDPE blend was not found in m-LLDPE/LLDPE blends. The blending m-LLDPE to LLDPE caused the dramatic decrease in the induction time of m-LLDPE/LLDPE blends but it seems that the blend composition shows less effect on the induction time. Lower branching number in m-LLDPE resulted in the increasing of spherulites growth rate and the maximum size of spherulites is depend upon both the induction time and spherulites growth rate of LLDPE component affected by m-LLDPE.

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Crystal Growth of rutiles doped with Impurity Ions by Floating Zone Method (부유대용융법에 의한 불순이온 주입된 $TiO_2$단결정 성장 연구)

  • 이성영;유영문;김병호
    • Proceedings of the Korea Crystallographic Association Conference
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    • 1999.04a
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    • pp.1-1
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    • 1999
  • 부유대용융법에 의하여 불순이온의 종류와 각 이온의 주입 농도를 달리하는 Rutile 단결정을 성장하였다. 성장된 결정으로부터 제조한 박편시료를 이용하여 결정결함과 광투과도에 미치는 각 불순이온의 영향을 조사하였다. 결정성장용 주원료로 99.99%의 TiO2를 사용하고, 불순이온 주입을 위한 원료로서 99.99%의 Al2O3, H3BO3, Ga2O3, Sc2O3, V2O5, Fe2O3, ZrO2, Er2O3, Cr2O3를 각각 사용하였다. 불순이온의 종류에 따르는 영향을 조사하기 위하여 TiO2 99.8 atomic%-불순이온 0.2atomic%의 조성이 되도록 각 이온별로 원료를 정밀하게 평량하고 균일 혼합하였다. 불순 이온의 첨가량에 따르는 영향을 조사하기 위하여 Al2O3는 각각 pure, 0.2, 0.4, 0.6 atomic%를, Cr2O3는 pure, 0.003, 0.05, 0.2 atomic%를 각각 치환하여 원료를 조합하였다. 균일 혼합된 원료를 직경 8mm의 고무 튜브에 넣고 CIP(Cold Isostatic Press0에서 2000kg/$\textrm{cm}^2$의 압력으로 성형한 후 150$0^{\circ}C$에서 1시간 소결함으로서 결정성장용 다결정 원료를 합성하였다. 합성된 다결정을 double ellipsoidal mirror 내에 설치하고,halogen lamp로 가열하여 원료의 한쪽 끝을 용융한 다음, 20rpm의 회전속도, 3-5mm/hr의 성장속도로 하는 유속 1$\ell$/min의 O2 분위기속에서 부유대용융법에 의하여 결정을 성장하였다. 성장된 결정을 성장축에 수직한 방향으로 각각 절단, 연삭, 연마한 박편을 이용하여 편광하에서 low-angle grain boundaries 및 기타의 결정결함을 관찰하였으며, 0.3$\mu\textrm{m}$~0.8$\mu\textrm{m}$ 범위 및 0.6$\mu\textrm{m}$~3.4$\mu\textrm{m}$ 범위에서의 투과 및 흡수 스펙트럼을 측정하였다. 결정 성장 결과 B3+, Er3+, Cr3+ 이온은 Ti4+ 이온과 이온의 크기 차이가 심하여 결정의 정상적인 성장을 방해하는 물성을 나타냈고, V5+, Cr3+ 이온은 흑색의 결정, Fe3+ 이온은 적갈색의 결정으로 성장되었다. Al3+, Zr4+, Al3+의 순서로 투과도가 높아지는 것이 관찰되었다. 불순이온의 농도에 따른 영향으로서 Al3+ 이온의 경우 주입농도가 높아질수록 low angle boundary와 oxygen deficiency가 감소하였고, 투과율은 조금 감소하거나 큰 차이가 없는 것으로 나타났다. 반면에 Cr3+ 이온을 주입한 경우 0.003 atomic%에서 최적의 물성을 보였으며, 주입농도가 높아질수록 결정성장이 어려워지고 광의 투과도가 급격히 저하되었다.

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The annihilation of the flow pattern defects in CZ-silicon crystal by high temperature heat treatment (고온 열처리에 의한 결정결함의 재용해)

  • 서지욱;김영관
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.3
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    • pp.89-95
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    • 2001
  • The CZ-silicon crystal was annealed at $1350^{\circ}C$ to dissolve the vacancy type grown-in defects. A this temperature, the equilibrium concentration of the oxygen in the silicon crystal is around $1.7{\times}10^{18}$ which induces the oxygen undersaturation in the silicon crystal. This situation results in the faster dissolution of the grown-in defects in the bulk of the silicon wafer than near the surface. This indicates the possibility that the presence of the higher concentration of silicon interstitial hinders the dissolution of the grown-in defects, which were known to compose of the vacancy clusters with surrounding silicon oxide film. This expectation was confirmed by the observation that the slower dissolution of the grown-in defects near the surface of the silicon wafer in the oxygen atmosphere than in the argon atmosphere. This result is quite opposite to the previous argument hat presence of the excess silicon interstitial leads to faster dissolution of the vacancy type defects.

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