• Journal of Sensor Science and Technology
• /
• v.11 no.1
• /
• pp.9-17
• /
• 2002

The forming conditions of X-ray storage phosrhors $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ have been investigated, and measured the PSL emission spectra and its intensity, fading characteristics and does dependence of the prepared phosphors. These characteristics were compared with those of commercial image plate (ST-III) obtained from Fuji Photo Film Co. The optimal preparing conditions of $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ Phosphor were 0.5 mol% of $EuF_3$, 4.0 mol% of NaF and composition ratio x=0.3, and the sintering temperature were $950^{\circ}C$ in $H_2$ atmosphere. When the composition ratio x was equal to 0, the spectral range of the luminescence of $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ phosphor was $365{\sim}420\;nm$, and its maximum luminescence intensity appeared at 390 nm. When composition ratio x was not equal to 0, the wavelength ranges and peak of the spectra were shifted to the longer wavelength with the growth of composition ratio x. A good linearity was shown between the PSL intensity and X-ray irradiation dose. The phosphor sample with x=0.3 exhibited better fading characteristics than that of other $BaFBr_{1-x}I_x:Eu^{2+}$ phosphor samples, and the fading characteristics of the PSL intensity at room temperature were shown poorer with increasing $I^-$ ion concentration. The lattice constant of the phosphor becomes larger with increasing the $I^-$ ion concentration.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.21 no.3
• /
• pp.99-104
• /
• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.