• Title/Summary/Keyword: 거대자기임피던스

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Magnetic Sensor Using Giant Magneto-Impedance Effect (거대자기임피던스 효과를 이용한 자기 센서)

  • Choi, Kyoo-Nam
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.6
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    • pp.1057-1064
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    • 2017
  • High sensitivity magnetic sensor having foreign metal detection capability is proposed utilizing giant magneto-impedance effect. Strip sensor showed the increasing output voltage when the external magnetic field was applied along with strip from strip grounding point, although the initial DC voltage varied depending on the pointing direction of strip sensor. Proposed sensor was able to eliminate more than half of background noise using active noise filter to achive high sensitivity, and it showed the capability to detect magnetized foreign metal object independent of ambient electro-magnetic noise and earth magnet. In case of ferrous sphere, the metal detection up to 0.8mm diameter was experimentally demonstrated at 5mm distance from strip sensor.

Development of Magnetoimpedance Sensor Utilizing Soft Magnetic Amorphous Ribbon with Exchange Coupling and Application to Nondestructive Testing (교환결합을 가진 연자성 비정질 리본을 이용한 자기 임피던스 센서 개발과 비파괴검사 응용)

  • Yoon, Seok-Soo;Kim, Gun-Woo;Lee, Sang-Hun;Kim, Cheol-Gi
    • Journal of the Korean Society for Nondestructive Testing
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    • v.28 no.5
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    • pp.401-406
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    • 2008
  • Recently, portable magnetic sensors with high sensitivity are strongly required for various applications such as biosensor, nondestructive testing and directional sensor. A novel magnetic sensor system was developed by utilizing giant magnetoimpedance(MI) effect of soft magnetic ribbons. The sensor system consists of sensing head of $Co_{66}Fe_{4}Si_{15}B_{15}$ ribbon having asymmetric MI characteristics through exchange coupling produced by field-annealing in open air and circuit for signal processing. The sensor system showed almost linear characteristics in dynamic range of $-1\;Oe\;{\sim}\;1\;Oe$ and sensitivity of 10.5 V/Oe. The sensor was applicable to nondestructive testing system to detect defects in wire ropes.

Properties Change of Electroplated Permalloy Thin Films by Organic Additives (유기첨가제에 의한 전기도금 퍼말로이 박막의 물성변화)

  • Bang, Won-Bae;Bae, Jong-Hak;Hong, Ki-Min;Chung, Jin-Seok;Ko, Young-Dong;Lee, Hee-Bok
    • Journal of the Korean Magnetics Society
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    • v.17 no.3
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    • pp.133-136
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    • 2007
  • We investigated the changes of the magnetic properties in electroplated Permalloy thin films by a few organic additives added to the plating electrolytes. Under identical electroplating conditions, the crystalline orientations and the surface roughness of the plated thin films were different from those prepared with a pure electrolyte. These property changes reduced the coercivity and increased the magnetoimpedance ratio (MIR) up to 20%.

Magnetic Bias Effects in Field-annealed CoFeSiB Amorphous Ribbons (공기 중에서 자기장 열처리된 CoFeSiB 비정질 리본에서의 자기 바이어스 효과)

  • Cha, Yong-Jun;Jeong, Jong-Ryul;Kim, Cheol-Gi;Kim, Dong-Young;Yoon, Seok-Soo
    • Journal of the Korean Magnetics Society
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    • v.19 no.6
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    • pp.191-196
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    • 2009
  • Magnetic bias phenomena of field-annealed CoFeSiB amorphous ribbons showing asymmetric giant magnetoimpedance was investigated by MOKE method. The specimens removed the crystalline layer at one surface side by chemical etching were prepared and measured magnetization curves by MOKE to investigate the effect of the crystalline layer on magnetization of inner soft amorphous phase. We observed the shift of hysteresis loop, and concluded that the crystalline layer exerts bias field effect on inner soft amorphous phase and the direction of bias filed is opposite to the magnetization direction of surface crystalline layer.

AC Voltage and Frequency Dependence in Tunneling Magnetoresistance Device (터널링 자기저항 소자의 교류 전압 및 주파수 의존성 연구)

  • Bae, Seong-Cheol;Yoon, Seok Soo;Kim, Dong Young
    • Journal of the Korean Magnetics Society
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    • v.26 no.6
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    • pp.201-205
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    • 2016
  • In this report, we measured the impedance spectrum in TMR device, and the relaxation behavior of the real and imaginary impedance spectrum was analyzed by using the equilibrant circuit of tunneling capacitance ($C_T$) and tunneling resistance ($R_T$). The relaxation frequency was increased with AC voltage in both the parallel and antiparallel alignment of two magnetic layers. The $R_T$ with AC voltage showed the typical bias voltage dependence. However, the $C_T$ showed large value than the expected geometrical capacitance. The huge increase of $C_T$ was affecting as a limiting factor for the high speed operation of TMR devices. Thus, the supercapacitance of $C_T$ should be considered to design the high speed TMR devices.