• Korean Chemical Engineering Research
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• v.62 no.1
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• pp.1-6
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• 2024

As the demand for hydrogen electric vehicles for commercial vehicles increases, the durability of PEMFCs must increase more than five times that of passenger cars, so research and development to improve durability is urgent. When the PEMFC membrane electrode assembly (MEA) undergoes chemical degradation, the MEA thickness decreases and pinholes occur. In this study, changes in the performance and durability of the MEA were measured while increasing the clamping pressure of the unit cell after open circuit voltage (OCV) holding, an accelerated chemical degradation experiment. As the clamping pressure increased, the resistance of the polymer membrane and the membrane/electrode contact resistance decreased, improving the I-V performance and reducing the hydrogen permeability. As the hydrogen permeability decreased, the OCV increased. When the pinhole area was removed and the MEA clamping pressure was increased, the hydrogen permeability decreased sharply, confirming that the local degradation has a large effect on the performance and durability of the entire cell. When the pinhole was removed and re-clamping and OCV holding was evaluated, it was confirmed that the durability improved according to the decrease in membrane resistance and hydrogen permeability.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.67-72
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• 1998

The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.