• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.30 no.6
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• pp.1-6
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• 2002

Micro engine that includes Micro scale combustor is fabricated. Design target was focused on the observation of combustion driven actuation in MEMS scale. Combustor design parameters are somewhat less than the size recommended by feasibility test. The engine structure is fabricated by isotropic etching of the photosensitive glass wafers. Electrode is formed by electroplating of the Nickel. Photosensitive glass can be etched isotropically with almost vertical angle. Bonding and assembly of structured photosensitive glass wafer from the engine. Combustor size was determined to be 1mn scale. Piston in cylinder moves by fuel injection and reaction. In firing test, adequate engine operation including ignition, flame propagation and piston motion was observed. Present study warrants further application research on MEMS scale internal combustion power units.

• Clean Technology
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• v.29 no.4
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• pp.255-261
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• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.