• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.12-17
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• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.12
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• pp.1667-1675
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• 2001

Numerical simulations are carried out for the liquid encapsulant Czochralski(LEC) by imposing a magnetic field. The use of a magnetic field to the crystal growth is to suppress melt convection and to improve the homogeneity of the crystal. In the present numerical investigation, we focus on the range of 0-0.3Tesla strength for the axial and cusped magnetic field and the effect of the magnetic field on the melt-crystal interface, flow field and temperature distribution which are the major factors to determine the quality of the single crystal are of particular interest. For both axial and cusped magnetic field, increase of the magnetic field strength causes a more convex interface to the crystal. In general, the flow is weakened by the application of magnetic field so that the shape of the melt-crystal interface and the transport phenomena are affected by the change of the flow and temperature field.