• Title/Summary/Keyword: 가우스 온도분포

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스펙트럼 선윤곽의 도플러 해석

  • Kim, Gap-Seong;Sim, Gyeong-Jin;Park, Yeong-Deuk;Yun, Hong-Sik
    • Publications of The Korean Astronomical Society
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    • v.6 no.1
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    • pp.16-26
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    • 1991
  • 스펙트럼선의 선폭증대 현상을 방출영역 내 기체입자들이 열운동에 의한 단순 도플러 효과로 가정하여 중심에서 어느 한쪽으로 심하게 치우친 스펙트럼 선윤곽를 해석한다. 본 연구에서는 태양활동영역에서 흔히 관측되는 좌우 비대칭의 선윤곽을 서로 다른 가우스속도분포의 기체성분들이 시선방향으로 중첩된 결과라 해석하고, 최소자승법을 이용한 비선형 선윤곽 맞춤질에 의해 스펙트럼 방출영역에서 떨어져 나가는 기채들의 온도 및 분출속도에 관련된 도플러선폭과 도플러이동량을 구하였다.

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Modeling on Ratio-Dependent Three-Trophic Population Dynamics Responding to Environmental Impacts (외부 환경영향에 대한 밀도비 의존 3영양단계의 개체군 동태 모델)

  • Lee, Sang-Hee;Choi, Kyung-Hee;Chon, Tae-Soo
    • Korean Journal of Ecology and Environment
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    • v.37 no.3 s.108
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    • pp.304-312
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    • 2004
  • The transient dynamics of three-trophic populations (prey, predator, and super predator) using ratio-dependent models responding to environmental impacts is analyzed. Environmental factors were divided into two parts: periodic factor (e.g., temperature) and general noise. Periodic factor was addressed as a frequency and bias, while general noise was expressed as a Gaussian distribution. Temperature bias ${\varepsilon}$, temperature frequency ${\Omega}$, and Gaussian noise amplitude ${\`{O}}$ accordingly revealed diverse status of population dynamics in three-trophic food chain, including extinction of species. The model showed stable limit cycles and strange attractors in the long-time behavior depending upon various values of the parameters. The dynamic behavior of the system appeared to be sensitive to changes in environmental input. The parameters of environmental input play an important role in determining extinction time of super predator and predator populations.

Comparison of the Characteristics of Polycrystalline Silicon Thin Films Between Rapid Thermal Annealing and laser Annealing Methods (급속열처리와 엑시머 레이저에 의해 형성된 다결정 실리콘 박막에서 열처리 방법에 따른 박막의 특성변화)

  • Lee, Chang-U;Go, Min-Gyeong;U, Sang-Rok;Go, Seok-Jung;Lee, Jeong-Yong;Choe, Gwang-Ryeol;Choe, Yeong-Seok
    • Korean Journal of Materials Research
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    • v.7 no.10
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    • pp.908-913
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    • 1997
  • 플라즈마 화학 증착 방법에 의해 corning 7059 유리기판위에 비정질 실리콘 박막을 만들고 고온열처리, 다단계급속열처리, 일차원 선형빔(line shape beam)의 가우스 분포를 가지는 엑시머 레이저 열처리를 이용하여 고상 및 액상의 재결정화를 통해 다결정 실리콘 박막을 제작하였다. 편광된 라만 분광학(Raman spectroscopy)을 통하여 여러 가지 열처리 방법과 기판온도에 따른 다결정 실리콘 박막의 잔류응력을 조사하였다. 레이저 열처리에 의하여 결정화된 실리콘 기판의 경우, 높은 결정화된 체적량과 잔류응력을 갖으며 equaxial결정성을 갖는다. 그러나 이러한 고상 재결정화된 다결정 실리콘 박막은 라만스펙트럼에서 480$cm^{-1}$ /주위에 넓게 퍼져있어 비정질상(amorphous phase)이 함께 존재함을 알 수 있다. 고온열처리와 다단계급속열처리의 경우 잔류응력의 크기는 각각 4.07x$10^{9.}$과 4.56x$10^{9 dyne}$ $\textrm{cm}^2$이다. 또한 엑시머레이저 열처리의 경우 기판온도가 상온에서 40$0^{\circ}C$로 증가할수록 열적인 완화에 의해 잔류응력이 1.35x$10^{10}$에서 8.58x$10^{9}$dyne/$\textrm{cm}^2$으로 감소하는 것을 알 수 있다.다.

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Prediction of Penetration and Heat Affected Zone by Using Finite Element Method in $CO_2$ Arc Welding (유한 요소법을 이용한 $CO_2$아아크 용접부의 용입깊이와 열영향부 크기 예측)

  • 이정익;박일철;박기영;엄기원
    • Journal of Welding and Joining
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    • v.10 no.4
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    • pp.222-229
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    • 1992
  • A prediction of penetration and heat affected zone by using Finite Element Method in CO$_{2}$ Arc Welding has been discussed this paper. The temperature distribution of a base metal produced by the CO$_{2}$ arc welding processing is analyzed by using a three dimensional finite element model. The common finite element program ANSYS 4.4A was employed to obtain the numerical results. Temperature dependent material properties, effect of latent heat, and the convective boundary conditions are included in the model. Numerically predicted sizes of the penetration and the heat affected zone are compared with the experimentally observed values. As a result, there was a slight difference between numerical analysis values and experimentally observed values. For in the case of heat affected zone, it was not considered a precise forced convective coefficient value, and in the case of penetration, it was not, considered a arc force.

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Reference white setting based on brightness of CPT and resolution (수상관의 밝기 및 해상도를 고려한 기준 백색 설정)

  • 최덕규;김주동;권기룡;안상호;이건일;송규익
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.2
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    • pp.334-343
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    • 1997
  • Reference white in color television receiver can be achieved by adjusting the RGB gun current ratio and it is necessary to provide additional gain ratio adjustment for the RGB video signal. Generally, the gun current density profile has a gaussian distribution and the gain-bandwidth product of RGB channel amplifieris constant. Therefore brightness and spatial resolution are changed with variations in reference white of receiver. In this paper, the effect of RGB gun current and channel gain ratios on brightness and resolution of CPT is analyzed. Brightness is increased with the color temperature of referenc white because of Helmholtz-kohlrausch effect. The change in ligh output is more abrupt and spatial resolution is improved with unity current ratio. For more bright and improved ressolution we also present the range of color temperature of reference white for P22 phosphors.

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New Analysis Approach to the Characteristics of Excimer Laser Annealed Polycrystalline Si Thin Film by use of the Angle wrapping (엑시며 레이저에 의해 형성된 다결정 실리콘 박막의 Angle wrapping에 의한 깊이에 따른 특성변화)

  • Lee, Chang-U;Go, Seok-Jung
    • Korean Journal of Materials Research
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    • v.8 no.10
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    • pp.884-889
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    • 1998
  • Amorphous silicon films of large area have been crystallized by a line shape excimer laser beam of one dimensional scanning with a gaussian profile in the scanning direction. In order to characterize the crystalline phase transition of thickness variables in excimer laser annealing(ELA), angle wrapping method was used. And also to characterize the residual stresses of crystalline phase transition in the case of angle wrapped-crystalline silicon on corning 7059 glass, polarized raman spectroscopies were measured at various laser energy density and substrate temperature. The residual stress varies from $9.0{\times}10^9$ to $9.9{\times}10^9$, and from $9.9{\times}10^9$ to $1.2{\times}10^10$dyne/${cm}^2$ of the substrate temperature at room temperature and varies from $8.1{\times}10^9$ to $9.0{\times}10^9$, and from $9.0{\times}10^9$ to $9.9{\times}10^9$dyne/${cm}^2$ of the substrate temperature at $400^{\circ}C$ as a function of direction from surface to substrate. According to the direction from the surface in liquid phase to the interface and from the interface to near the substrate in solid phase of recrystallized Si thin film, respectively. Thus, the stress is increased from(Liquid phase to solid phase) with phase transition.

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