• Geophysics and Geophysical Exploration
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• v.8 no.1
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• pp.41-49
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• 2005

We have developed a random heterogeneous velocity model with bimodal distribution in methane hydrate-bearing Bones. The P-wave well-log data have a von Karman type autocorrelation function and non-Gaussian distribution. The velocity histogram has two peaks separated by several hundred metres per second. A random heterogeneous medium with bimodal distribution is generated by mapping of a medium with a Gaussian probability distribution, yielded by the normal spectral-based generation method. By using an ellipsoidal autocorrelation function, the random medium also incorporates anisotropy of autocorrelation lengths. A simulated P-wave velocity log reproduces well the features of the field data. This model is applied to two simulations of elastic wane propagation. Synthetic reflection sections with source signals in two different frequency bands imply that the velocity fluctuation of the random model with bimodal distribution causes the frequency dependence of the Bottom Simulating Reflector (BSR) by affecting wave field scattering. A synthetic cross-well section suggests that the strong attenuation observed in field data might be caused by the extrinsic attenuation in scattering. We conclude that random heterogeneity with bimodal distribution is a key issue in modelling hydrate-bearing Bones, and that it can explain the frequency dependence and scattering observed in seismic sections in such areas.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.44 no.3
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• pp.80-87
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• 2007

In this paper, we investigate an enhancement method for Western epigraphic images, which is based on local statistics. Image data is partitioned into two regions, background and information. Statistical and functional analyses are proceeded for image modeling. The Western epigraphic images, for the most part, have shown the Gaussian distribution. It is clarified that each region can be differentiated statistically. The local normalization process algorithm is designed on this model. The parameter is extracted and it‘s properties are verified with the size of moving window. The spatial gray-level distribution is modified and regions are differentiated by adjusting parameter and the size of moving window. Local statistics are utilized for realization of the enhancement, so that difference between regions can be enhanced and noise or speckles of region can be smoothed. Experimental results are presented to show the superiority of the proposed algorithm over the conventional methods.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.693-695
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• 2012

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET as the device to be able to use until nano scale has the adventage to reduce the short channel effects. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change od the breakdown voltage for gate oxide thickness and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.372-377
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• 2013

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.4
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• pp.885-890
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• 2014

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The Gaussian function as doping distribution is used to approch experimental results. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.698-701
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• 2013

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.5 no.2
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• pp.10-19
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• 1994

The error rate equation of Reed-Solomon/Convoutional concatenated coded MFSK signal transmitted over m-distributed fading channel with Additive White Gaussian Noise (AWGN) and re- ceived with Maximal Ratio Combining (MRC) diversity has been derived. The bit error probability has been evaluated using the derived equation and shown n figures as a function of signal to noise ratio, fading index and the number of diversity branches. From the results obtained, we have shown that the bit error probability of MFSK signal is improved by using coding technique in fading environment. The concatenated coding technique is found to be very effective. When concatenated coding and MRC diversity reception techniques are used together in fading environ- ment, the improvement of error performance attains about 6.6 dB in terms of SNR as compared with that of employing only concatenated coding case.

• Journal of Korea Water Resources Association
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• v.31 no.4
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• pp.363-373
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• 1998

In this study, random flow field in a nonstationary porous formation is characterized through cross covariances of the velocity with the log conductivity and the head. The hydraulic head and the velocity in saturated aquifers are found through stochastic analysis of a steady, two-dimensional flow field without recharge. Expression for these cross covariances are obtained in quasi-analytic forms all in terms of the parameters which characterize the nonstationary conductivity field and the average head gradient. The cross covariances with a Gaussian correlation function for the log conductivity are presented for two particular cases where the trend is either parallel or perpendicular to the mean head gradient and for separation distances along and across the mean flow direction. The results may be of particular importance in transport predictions and conditioning on field measurements when the log conductivity field is suspected to be nonstationary and also serve as a benchmark for testing nonstationary numerical codes. Keywords : cross covariance, nonstationary conductivity field, saturated aquifer, stochastic analysis.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.6 no.3
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• pp.55-67
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• 1995

The error rate equations of MPSK and DS/MPSK radio signals transmitted through the m-distributed fading channel in Gaussian noise and tone interference environments have been derived. Using the derived equations, the error rate performance is evaluated and shown as functions of carrier-to-noise ratio, carrier-to-interference ratio, processing gain, fading index and the number of diversity branches. The derivation has been done for two cases. The first case assumes that only the signal is undergoing the influence of fading, and the second case assumes that both signal and interference are undergoing the influence of fading simultaneously. From the obtained results, we have known that the error performance of MPSK signal is improved by using diversity technique and direct sequence spread spectrum technique even in a fading environment. Also comparing the error rate performance of two cases, the latter is worse than the former.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.11
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• pp.205-212
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• 2018

In order to overcome shortcomings of commercial analysis program for solving certain geotechnical problems, finite element method adopting isoparametric quadrilateral element was selected as a tool for analyzing soil behavior and calculating process was programmed. Two examples were considered in order to verify reliability of the developed program. One of the two examples is the case of acting isotropic confining pressure on finite element and the other is the case of acting shear stress on the sides of the finite element. Isoparametric quadrilateral element was considered as the finite element and displacements in the element can be expressed by node displacements and shape functions in the considered element. Calculating process for determining strain which is defined by derivatives using global coordinates was coded using the Jacobian and the natural coordinates. Four point Gauss rule was adopted to convert double integral which defines stiffness of the element into numerical integration. As a result of executing analysis of the finite element under isotropic confining pressure, calculated stress corresponding to four Gauss points and center of the element were equal to the confining pressure. In addition, according to the analyzed results for the element under shear stress, horizontal stresses and vertical stresses were varied with positions in the element and the magnitudes and distribution pattern of the stresses were thought to be rational.