• Proceedings of the Korean Geotechical Society Conference
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• 2005.03a
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• pp.1396-1399
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• 2005

Gas permeability of the solidified sewage sludge needs to be characterized in order to use as a large-scale landfill cover material. Four different types of the samples were prepared for gas permeability experiments: (1) granite soil, (2) dried sewage sludge, (3) solidified sewage mixed with slag and (4) solidified sewage mixed with granite soils. The experimental instrumentation and measurement devices were newly designed and created to effectively evaluate gas permeability of the samples.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.411-418
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• 2000

$Al_2O_3$ thin films of 300 nm thickness were deposited at room temperature using DC reactive sputtering with variation of the $O_2$ content in the sputtering gas from 30% to 70%. Regardless of the $O_2$ content in the sputtering gas, the sputtered $Al_2O_3$ films were amorphous and exhibited the refractive index of 1.58. When the $O_2$ content in the sputtering gas was higher than 50%, the $Al_2O_3$ films exhibited excellent transmittance of about 98% at 550 nm wavelength. However, the transmittance decreased to about 94% for the $Al_2O_3$ films deposited with the sputtering gas of the 30% and 40% $O_2$contents. The optimum dielectric properties (dielectric constant of 10.9 and loss tangent of 0.01) was obtained for the $Al_2O_3$ film deposited with the sputtering gas of the 50% $O_2$ content. When the $O_2$ content in the sputtering gas was within 40% to 60%, the $Al_2O_3$ films exhibited no shift of flatband voltage $V_{FB}$ in C-V curves and exhibited leakage current density lower than $10^{-5}\textrm{A/cm}^2$ at 150 kV/cm.

• Journal of the Korean Society for Nondestructive Testing
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• v.21 no.5
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• pp.556-560
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• 2001

Remote field eddy current testing (RFECT) with through-wall transmission characteristic is being applied to pipes ranging from small tubes of heat exchanger to natural gas supply pipelines. Cast iron pipes with nominal diameter of 100mm are used primarily as the waterline pipes. The leakage of water occurs due to defects in the pipes caused by vibration of automobiles and corrosion. But, the use of direct inspection methods such as insertion of inspection equipment inside the pipelines has been limited due to its lack of economical efficiency. Economical development of inspection equipments is possible since RFECT method can be easily employed for system integration and quantitative evaluation of both inside and outside defects. In this study, the development of underground pipeline inspection system was tarried out by using RFECT method in consideration of the characteristics of waterline network. This paper specifically describes the design and production of RFECT pipeline inspection pig using centralizer mechanism, development of remote field eddy current signal acquisition and processing software, and review of RFECT system operation procedures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.492-492
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• 2011

단일벽 탄소나노튜브(Single-Walled Carbon Nanotubes, SWCNTs)는 매우 우수한 전기적, 광전자적 특성을 가지고 있어 차세대 나노 전자소자 물질로 각광받고 있다. 특히, 이들의 전기적 특성은 직경과 카이랄리티(chirality)에 따라 금속성(metallic)과 반도체성(semiconducting)으로 구분된다. 각 특성에 따라 금속성은 투명전극, 반도체성은 전계효과 트랜지스터(CNT-FET)로 활용가능성이 높다. 하지만, 일반적으로 단일벽 탄소나노튜브는 이 두 가지의 특성이 혼재되어 합성되기 때문에, 그들의 선택적 분리는 나노튜브 기반 전자소자 응용을 위해 매우 중요한 과정 중 하나이다. 최근에는 반응 가스를 이용한 선택적 제거, 밀도차를 이용한 원심분리법(density gradient ultracentrifugation) 등 다양한 방법들이 보고된 바 있다. 본 연구는 대기 중에서 마이크로웨이브 조사하여 금속성 나노튜브만을 선택적으로 제거하였다. 마이크로웨이브 조사는 CVD 방법과 전기 방전법으로 성장된 단일벽 탄소나노튜브에 800W로 조사 시간을 변화하며 수행하였다. 실험 결과, 조사 시간이 증가할수록 두 종류의 나노튜브에서 반도체성 나노튜브는 남아있는 반면 금속성 나노튜브는 점차 제거되었다. 이러한 원인은 각 전기적 특성에 따른 유전상수 차이에 의하여 기인한 것이다. 전기적 특성과 결정성은 라만 분광법(Raman spectroscopy)을 통하여 분석하였으며, 직경 및 분산정도는 주사전자현미경(scanning electron microscope), 투과전자현미경(tunneling electron microscope)으로 관찰하였다.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.515-522
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• 2007

In this study we have attempted to evaluate the technical feasibility of "BB-HY", which is depleted gas reservoir as a gas storage field, using the commercial compositional simulator "ECLIPSE 300". The "BB-HY" reservoir has an initial gas in place of 143 BCF which is relatively small, and its porosity and permeability are 19.5% and 50 md, respectively. For "BB-HY" gas reservoir, we have performed a feasibility analysis by investigating the cushion gas (or working gas), converting time to gas storage field, operation cycle, number of wells and the possible application of horizontal borehole as well. From the simulation results, it was found that the amount of cushion gas in "BB-HY" reservoir is required at least 50% of IGIP in order to operate stably as gas storage field. When one produces gas for longer time and hence the remaining gas in reservoir is less than optimal cushion gas, no technical problem was occurred as long as additional cushion gas is injected up to the optimal cushion gas. In the case of changing the operation cycle into producing gas for three months during winter season from producing five months, the result shows that either the cushion gas should be greater than 60% or the more number of wells should be drilled. Meanwhile, from the results of sensitivity analysis for the number of wells, in cases of operating six or eight vertical wells, the stable reproduction of the injected gas can not be possible in "BB-HY" gas reservoir since the remaining gas in reservoir is increased. Therefore, in "BB-HY" reservoir, at least ten vertical wells should be drilled for the stable operation of gas. This time, when three horizontal wells are additionally drilled including the existing two vertical wells, it was found that the operation of injection and reproduction of gas is relatively stable in "BB-HY" gas reservoir.

• Tunnel and Underground Space
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• v.27 no.6
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• pp.387-392
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• 2017

Recently, road cave-ins, also referred to as ground sinking, have become a problem in urban environments. Public utility facilities such as sewage pipelines, communications pipes, gas pipes, power cables, and other types of underground structures are installed below the roads. It was reported that cave-ins are caused by the aging and lack of proper maintenance of underground facilities, as well as by construction problems. A road cave-in is first initiated by the formation of cavities typically induced by the breakage of underground pipelines. The cavities then grow and reach the base of the pavement. The traffic load applied at the surface of the roads causes an abrupt plastic deformation. This type of accident can be considered as a type of disaster. A road cave-in can threaten both human safety and the economy. It may even result in the loss of human life. In the city of Seoul, efforts to prevent damage before cave-ins occur have been prioritized, through a method of discovering and repairing joints through the 3D GPR survey.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.31-38
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• 2015

In order to achieve a high speed and high quality silicon wafer bonding, the room-temperature direct bonding using atmospheric pressure plasma and sprayed water vapor was developed. Effects of different plasma fabrication parameters, such as flow rate of $N_2$ gas, flow rate of CDA (clear dry air), gap between the plasma head and wafer surface, and plasma applied voltage, on plasma activation were investigated using the measurements of the contact angle. Influences of the annealing temperature and the annealing time on bonding strength were also investigated. The bonding strength of the bonded wafers was measured using a crack opening method. The optimized condition for the highest bonding strength was an annealing temperature of $400^{\circ}C$ and an annealing time of 2 hours. For the plasma activation conditions, the highest bonding strength was achieved at the plasma scan speed of 30 mm/sec and the number of plasma treatment of 4 times. After optimization of the plasma activation conditions and annealing conditions, the direct bonding of the silicon wafers was performed. The infrared transmission image and the cross sectional image of bonded interface indicated that there is no void and defects on the bonded wafers. The bonded wafer exhibited a bonding strength of average $2.3J/m^2$.