• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.245-246
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• 2009

정전용량형 후막 스트레인 게이지(piezocapacitive thick film strain gage)는 세라믹 ($Al_2O_3$)을 주 원료로 하는 지지대(약 5mm)와 다이어프램(약 $300{\mu}m$) 그리고 가드 링으로 구성된다. 전극 판은 도전성 페이스트를 이용하여 지지대와 다이어프램에 형성되었으며 극판 사이에는 유전체 메이스트를 사용하여 스크린 인쇄로 후막을 형성하였다. 극판 사이의 가드 링 두께는 약 $30{\mu}m$정도로 다이어프램의 변위 최대값을 유지시키는 데 필요한 간격이다. 따라서 정전용랑형 후막 스트레인 게이지는 지지대를 중심으로 다이어프램에 압력 (0.5~1.0bar)이 인가될 때 변위를 발생시키면서 커패시터 값이 압력의 크기에 따라 비례 특성을 가지고 변화하는 것을 이용한 것이다. 압력이 없을때 초기값은 35pF~40pF 정도이고 정격압력의 최대치를 인가시켰을 때 약 55pF~55p를 나타내었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.2
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• pp.315-320
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• 2001

This paper describes a rotation-type field mill to measure the electric field intensity caused by thunderclouds on the ground level. The field mill developed is consisted of two isolated electrode vanes, a grounded stator and a rotor. To develop a high sensitive field mill, the principles and design rules of a rotation-type field mill are studied. Also, two types of calibration system, such as a cylindrical guard electrodes and a parallel-plate electrodes, are proposed to determine the sensitivity and frequency bandwidth of the field mill. From the calibration experiment, the frequency bandwidth and the sensitivity of the field mill are DC ~ 200 [Hz] and 0.267 [mV/V/m], respectively. Therefore, it can measure the electric field intensity from 73 [V/m] to 18.7 [㎸/m].

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.1
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• pp.384-398
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• 1996

An improved multi-channel Impedance Void Meter (IVM) is developed to measure an area-averaged void fraction. It consists of a main sensor, a reference sensor and a signal processor. The sensor was designed to be flush-mounted to the inner wall of the test section to avoid the flow disturbances. Guard electrodes are used to obtain evenly distributed electrical field in a measuring volume. A reference sensor is also installed to eliminate the drift in void signal caused by the changes in electrical properties of working fluid. The signal processor with three channels is specially designed so as to minimize the inherent error due to the phase difference between channels. As an example of applications, the mean and fluctuating components of void fraction are measured for bubbly and slug flow regime, and it is shown that IVM has good dynamic resolution which is required to investigate the structural developments of bubbly flow and the propagation of void waves in a flow channel.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.100-101
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• 2003

본 논문은 초고속 광통신용 검출기로 사용되고 있는 InP／InGaAs Avalanche Photodiode (APD)에 대한 연구로서 구조 변화에 따른 APD의 특성에 대해 연구하였다. 채택된 APB의 기본 구조는 Separated Absorption, Grading, Charge and Multiplication (SAGCM)구조로 u-InP 의 두께 3.5$\mu\textrm{m}$에~2.9$\mu\textrm{m}$ 만큼 Zn diffusion 하였으며, u-InGaAs 의 흡수층 두께는 0.8$\mu\textrm{m}$ 로 하였다. charge sheet 층의 도핑 농도는 ~ 3.5 $\times$ 10／sup 12／／cm／sup 2／ 이고, 전극 구조는 back side illumination type이다. (중략)

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.120-126
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• 2000

This paper dealt with the developed portable electric field meter which consisted of planar-type sensor, analog amplifier with gain controller, A/D convertor, and display unit. The principle of the planar-type sensor for detecting time-varying electric field of extremely low frequency (ELF) bandwidth was described, and a calibration system using cylindrical guard electrodes and parallel-plate electrodes was proposed. From the calibration experiment, the frequency bandwidth and the sensitivity of the developed electric field meter was $17[Hz]{\sim}7[kHz]$, and 4.45[mV/V/m], respectively. Also it can measure the electric field strength up to 10[kV/m], and the measured result was displayed on the liquid crystal display in digit. The electric field meter can be widely applied to measure electric field strength radiated from power lines, computers, and home appliances such as hair dryer, heater, etc.