• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.275-276
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• 2011

We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide As2Se3 thin films with Ag layer. The basic optical parameter which is a refractive index and extinction coefficent was taken by n&k analyzer. The source of laser was selected based on these parameter. Holographic gratings have been formed using He-Ne laser (wavelength: 632.8 nm) Diode Pumped Solid State laser (DPSS, wavelength: 532.0 nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

• Fibers and Polymers
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• v.1 no.1
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• pp.25-31
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• 2000

Poly(3-hexyl thiophene)(P3HT) and poly(3-dodecyl thiophene)(P3DT) were polymerized by oxidative coupling with ferric chloride. The P3HT light-emitting device emitted red light and it could be observable in the ordinary indoor light. The device had the turn-on electric field of about 3$\times$$10^7$ V/m. The maximum electroluminescene (EL) intensity was obtained when the thickness of polymer layer was about 130 nm in IT0/P3HT/Al device. The maximum external quantum yield was 0.002%. The maximum luminance was 21 cd/$m^2$. The EL intensity decreases with increasing the crystallinity of the polymer layer. By using the oriented poly(3-alkyl thiophene)(PAT) layer as an electroluminescent layer in the ITO/polymer/Al light-emitting devices, the polarized EL light emission was observed. The EL intensity ratio of parallel to perpendicular direction to the stretch direction for P3HT was about 1.40.

• Restorative Dentistry and Endodontics
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• v.22 no.2
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• pp.637-647
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• 1997

The purpose of this study was to evaluate the effect of concentration and pH of lactic acid on the formation of artificial root caries lesions formation in bovine teeth. The characterictics of artificially produced early root lesions were observed with polarized light microscope and the depth of lesions were mearsured with measuring microscope The results were as follows: 1. In the group of low pH and high concentration of lactic acid, the progress of lesion formation was faster than that of high pH and low concentration lactic acid group. 2. In the same group, initial lesion progress faster, but progression rate was reduced as time goes by. 3. In the development of initial root caries, cementum was act as a barrier to protect dentin from lesion progression.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.227-227
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• 2003

• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.85.2-85.2
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• 2017

The coronal electron density is a fundamental and important physical quantity in solar physics for estimating coronal magnetic fields and analyzing solar radio bursts. To check a validation of coronal electron density distributions (CEDDs) from polarized brightness (pB) measurements with Van de Hulst inversions, we compare CEDDs derived from a polarized brightness (pB) observation [MLSO/MK4 coronameter] and one spectroscopic observation [SOHO/UVCS]. For this, we consider data observed in 2005 with the following conditions: (1) the observation time differences from each other are less than 1 minutes; and (2) O VI doublet (O VI $1031.9{\AA}$ and $1037.6{\AA}$) is well identified. In the pB observation, the CEDDs can be estimated by using Van de Hulst inversion methods. In the spectroscopic observation, we use the ratio of radiative and collisional components of the O VI doublet to estimate the CEDDs. We find that the CEDDs obtained from pB measurements are higher than those based on UVCS observations at the heights between 1.6 and 1.8 Rs (${\times}1.9$ for coronal streamer, 1.2 ~ 1.8 for background corona, and 1.5 for coronal hole), while they are lower than those based on UVCS at the heights between 1.9 and 2.6 Rs (${\times}0.1{\sim}0.6$ for coronal streamer, 0.5 ~ 0.7 for background corona, and 0.6 for coronal hole). The CEDDs of coronal streamers are higher than those of background corona at the between 1.6 and 2.0 Rs: ${\times}1.2{\sim}2.4$ for MK4 and 1.5 ~ 1.9 for UVCS.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.198-198
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• 2010

The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-ramp in the range from 190nm to 2100nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.5 no.1
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• pp.59-67
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• 1995

Blood lead assay by $D_2$ lamp background correction method of atomic absorption spectrophotometer(AAS) with wavelength of 283.3 nm is most popular in occupational health practice in Korea. On the other hand, $D_2$ lamp background correction method with wavelength of 217.0 nm is also often used in general chemical analysis for lead assay in general purpose. But both methods have some weakness of background correction which brought direct effect on the results of analysis. Recently blood lead assay with polarized Zeeman effect of AAS was introduced and is now preferred in many laboratory than $D_2$ correction method in blood lead analysis. But still AAS with $D_2$ lamp are widely used in the field of occupational health in Korea. This study compared blood lead assay data with $D_2$ correction methods(283.3 and 217.0 nm) and with that of polarized Zeeman effect correction method to evaluate the validity of 02 correction methods. The results obtained were as follows; 1. Taking the value of polarized Zeeman effect method as reference value of 1.00, the mean relative value of $D_2$ correction method with wavelength of 217.0 nm was 0.92 and that with wavelength of 283.3 nm was 0.90 respectively in the analysis of blood lead whose value were below $20.0{\mu}g/dl$(p<0.001). Both mean values were statistically smaller than polarized Zeeman effect correction method. But in the analysis of blood whose value were between 20.0 to $20.0{\mu}g/dl$, the mean relative value of $D_2$ correction method was 0.96 in both wavelength and did not differ from polarized Zeeman effect method(p<0.001). There was no difference of blood lead between $D_2$ correction method and polarized Zeeman effect method in the analysis of blood lead whose value were over $40.0{\mu}g/dl$. 2. The variations of background correction value in polarized Zeeman effect method were not changed by increase of blood lead, but those in $D_2$ correction methods were increased by the increase of blood lead. While then relative standard deviation(RSD) of data measured by Zeeman effect method were decreased by the increase of blood lead, those by $D_2$ methods were nol differed by the increase of blood lead.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1083-1089
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• 2008

We studied the dielectric characteristics of low-k SiOCH thin films by Ellipsometry. The SiOCH thin films were prepared by deposition of BTMSM precursors on p-Si wafer by CCP-PECVD method. The nano-porous structural organic/inorganic hybrid-type of SiOCH thin films correlated directly to the formation of low dielectrics close to pore(k=1). The structural groups including highly dense pores in SiOCH thin films originated the anisotropic geometry type of network structure directing to complex refractive characteristics of SiOCH single layer on the p-Si wafer. The linearly polarized beam of Xe-ramp in the range from 190 nm to 2100 nm introduced to the surface of SiOCH thin film, and the reflected beam was Elliptically polarized by complex refractive coefficients of SiOCH dipole groups. The amplitude variation $\Psi$ and phase variation $\Delta$ of the relative reflective coefficients between perpendicular and parallel components to the incident plane were measured by Ellipsometry. The complex optical constants n and k as well as the dielectric constant and thickness of SiOCH thin films were driven by the measured value of $\Psi$ and $\Delta$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.9
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• pp.423-428
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• 2006

We have been carried out the two-beam interference method to form the diffraction grating on chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ thin films for Holography Data Storage (HDS). In the present work, we have been formed holographic diffraction gratings using He-Ne laser (632.8nm) under different Polarization state combinations (intensity polarization holography, phase polarization holography). It was obtained the diffraction grating efficiency by 11st order intensity and investigated the formed grating structure using Atomic Force Microscopy (AFM). As the results, it is shown that the diffraction efficiency of (P: P) polarized recording was maximum 2.4% and we found that its value was rather higher than that of other-polarized recordings. From the results, it is confirmed that the efficient holographic grating formation on amorphous chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ films depend on both the spatial variation of intensity and the polarization state of the incident field pattern.