• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.394-396
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• 2012

Chemical bath deposition (CBD) process conditions for depositing CdS buffer layers was studied for high efficiencies of CIGS thin film solar cells. Growth rate of CdS thin films has an effect on surface morphology and quality of thin films. By the change of growth rate, CdS buffer layers showed a large difference in surface morphology and this difference was closely related with the photovoltaic properties of CIGS solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.218-218
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• 2011

The CIGS Solar Cells have the highest conversion efficiency in the film-type solar cells. They consist of p-type CuInSe2 film and n-type ZnO film. The CdS films are used as buffer layer in the CIGS solar cells since remarkable difference in the lattice constant and energy band gap of two films. The CdS films are toxic and make harmful circumstances. The CdS films deposition process need wet process. In this works, we design and make the hitter and lamp reflection part in the sputtering system for the ZnS films deposition as buffer layer, not using wet process. Film thickness, SEM, and AFM are measured for the uniformity valuation of the ZnS films. We conclude the optimum deposition temperature for the films uniformity less than 1.6%. The ZnS films deposited by the sputtering system are more dense and uniform than the CdS films deposited by the Chemical Bath Deposition Method(CBD) for the CIGS Solar Cells.

• Journal of the Optical Society of Korea
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• v.18 no.2
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• pp.180-183
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• 2014

The surface of semiconductor solar cells, such as a-Si or CIGS (CuInGaSe) solar cells is not flat but textured in the microscopic domain. With textured surfaces, the optical reflectivity of a solar cell is different from that of flat surfaces in the wavelength region. In this paper, the effects of a textured surface on a CIGS solar cell are presented by RCWA (Rigorous Coupled Wave Analysis) method. The effect of incoherent light is also considered by RCWA with a Fourier analysis while conventional optical simulation uses the input light on the solar cell as coherent light. Using experimental results, the author showed that the RCWA method with a Fourier analysis is a proper method to simulate the optical properties of CIGS solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.295-295
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• 2011

CIGS박막을 동시 증발법(co-evaporation)으로 몰리브덴이 증착된 소다라임 유리 위에 성장시켰다. CdS 박막은 화학적 용액 성장법 (chemical bath deposition: CBD)을 이용하여 약 60 nm를 증착하였다. 열처리는 가열판 (hot-plate)을 사용하여 공기중에서 하였다. 열처리 온도는 0~350$^{\circ}C$까지 변화하였으며, 열처리 시간은 각각 5분이었다. 시료의 표면 및 계면의 변화를 SEM측정을 통하여 관측하였다. CdS/CIGS 박막의 열처리 온도 변화에 따른 photoluminescence 특성을 조사하였다. 여기 레이저는 488 nm ($Ar^+$ laser)와 632.8 nm (He-Ne laser)를 사용하여 결함의 근원을 조사하였다. 온도 의존성 실험을 통하여 CIGS 박막의 띠 간격 에너지를 확인할 수 있었으며, 결함 준위의 활성화 에너지 및 특성을 알 수 있었다. $Ar^+$ laser에서만 관측되는 신호의 근원은 CdS에 기인한 것이었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1564-1567
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• 2009

Cu(In,Ga)$Se_2$ (CIGS) thin films were formed using CIGS bulk by electron-beam evaporation method with an evaporation current from 20 mA to 90 mA. The experimental results showed that the chemical compositions and the properties of CIGS films varied with the different evaporation current. The Cu-rich CIGS film was deposited successfully with a band gap of 1.20 eV when the evaporation current was 90 mA.

• Journal of Applied Reliability
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• v.16 no.1
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• pp.41-47
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• 2016

Purpose: The purpose of this study was to evaluate electrical and structural degradation of flexible CIGS sollar cell exposed to high temperature and humid atmosphere. Method: Accelerated degradation was performed for various time under $85^{\circ}C/85%RH$ and then electrical and structural properties were analyzed by 4-point probe method, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Results: Sheet resistance of the top ITO layer increased with exposure time to the high temperature and humid atmosphere. Blunting of the protrusion morphology of ITO layer was observed for the degraded specimen, while no phase change was detected by XRD. Oxygen was detected at the edge area after 300 hours of exposure. Conclusion: Increase in electrical resistance of the degraded CIGS solar cell under high temperature and humid environment was attribute to the oxygen or water absorption.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.107-111
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• 2019

We report the fabrication of a CdS/CuInGaSe (CdS/CIGS) structure with carbon nanotubes and its application as a photocathode for photoelectrochemical water splitting. CIGS thin films were fabricated using co-evaporation by RF magnetron sputtering, while CdS was fabricated by chemical bath deposition. Spray coated multi-wall carbon nanotube (CNT) film on CdS/CIGS thin film was investigated as a photocathode. The CNT-coated CdS/CIGS showed superior photocurrent density and exhibited improved photostability.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.62.1-62.1
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• 2010

CIS(CuInSe2)계 화합물 태양전지는 높은 광흡수계수와 열적 안정성 및 조성 조절을 통한 밴드갭 조절이 용이해 고효율 박막 태양전지로 각광 받고 있다. 또한 CIGS 태양전지는 기존의 유리기판 대신 유연한 기판을 사용해 flexible 태양전지 제조가 가능하다. 이러한 유연기판은 보통 stainless steel과 같은 금속 기판이 많이 사용되는데 기존의 soda-lime glass 기판과는 달리 금속기판에는 Na이 첨가되어 있지 않아 별도의 Na첨가를 필요로 한다. Na은 CIGS 흡수층의 조성조절을 용이하게 하여 태양전지의 변환 효율을 향상시키는 역할을 한다. 본 연구에서 기판은 Na이 첨가되어있지 않은 corning glass를 사용 하였으며 NaF를 이용해 Mo가 증착된 기판에 NaF의 두께를 달리하며 증착해 CIGS 흡수층의 grain 사이즈를 비교 하였으며 그 후 태양전지 소자를 제조해 광전특성을 분석하였다. 후면 전극으로 약60nm 두께의 Mo를 DC Sputtering 방법을 이용해 증착 하였다. buffer층으로는 약 50nm의 CdS층을 CBD방법을 이용하여 제조 하였으며 TCO 층으로 약 50nm의 i-ZnO와 약 450nm의 Al-ZnO를 RF Sputtering방법으로 증착 하였다. 마지막으로 앞면 전극으로 약 $1{\mu}m$의 Al을 Thermal Evaporation방법으로 증착하였다. 태양전지 소자의 면적은 $0.49cm^2$로 효율을 비교 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.426-426
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• 2012

The CIGS absorber has outstanding advantages in the absorption coefficient and conversation efficiency. The CIGS thin film solar cells have been researched for commercialization and increasing the conversion efficiency. CIG precursors were deposited on the Mo coated glass substrate by magnetron sputtering with multilayer structure, which is CuIn/CuGa/CuIn/CuGa. Then, the metallic precursors were selenized under high Se pressure by RTP method which included. Se vapor was supplied using Se cracker cell instead of toxic hydrogen selenide gas. Se beam flux was controlled by variable reservoir zone (R-zone) temperature during selenization process. Cracked Se source reacted with CIG precursors in a small quantity of Se because of small size molecules with high activation energy. The CIGS thin films were studied by FESEM, EDX, and XRD. The CIGS solar cell was also developed by layering of CdS and ZnO layers. And the conversion efficiency of the CIGS solar cell was characterization. It was reached at 6.99% without AR layer.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.19-22
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• 2009

A non-vacuum process for fabrication of $CuIn_xGa_{1-x}Se_2$ (CIGS) absorber layer from the corresponing Cu, In, Ga solution precursors was described. Cu, In, Ga precursor solution was prepared by a room temperature colloidal route by reacting the starting materials $Cu(NO_3)_2$, $InCl_3$, $Ga(NO_3)$ and methanol. The Cu, In, Ga precursor solution was mixed with ethylcellulose as organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of Cu, In, Ga solution with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents and to burn the organic binder material. Subsequently, the resultant CIG/Mo/glass sample was selenized in Se evaporation in order to get a solar cell applicable dense CIGS absorber layer. The CIGS absorber layer selenized at $530^{\circ}C$ substrate temperature for 1h with various metal organic ratio.