• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.441-447
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• 1995

Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/SiO2/Si(100) substrate by rf magnetron sputtering. The substrate temperature changed from 35$0^{\circ}C$ to 55$0^{\circ}C$ and crystalline BST thin films were deposited above 45$0^{\circ}C$. Most of the films had (111) preferred orientation regardless of deposition temperature, but the films changed to (100) preferred orientation as gas pressure increased. The dielectric constant increased with increasing substrate temperature and film thickness, and ranged from 100 to 600 at room temperature. The leakage current increased as substrate temperature increased or as film thickness decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.379-382
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• 1998

(Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The Mic개structure, dielectric and electrical properties of BST thin films were investigated with sputtering pressure. Dielectric constant and dielectric loss of the deposited thin film at sputtering pressure of 5 mTorr were about 91 and 1.9(%), respectively. Increasing sputtering pressure, leakage current was increased. It was found that leakage current of BST thin films was depended on the sputtering pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.234-234
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• 2008

Chemically homogeneous $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) sols were synthesized using barium acetate, strontium acetate, and titanium isoproxide as starting materials. BST thin films of thickness 340 nm were deposited on Pt/$TiO_2/SiO_2$/Si and alumina substrates using spin coating method. The technique used for the processing of these films was Ultraviolet (UV) sol-gel photoannealing, using phto-sensitivity precursor solutions and UV-assisted rapid thermal processing(UV-RTP). The crystallization behaviour of the BST sols and thin films was studied by differential thermal analysis (DTA) and X-ray diffraction (XRD). Variation of permittivity and dielectric loss were measured in LCR-meter, model HP 4394A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.52-55
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• 2000

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.326-326
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• 2010

The dielectric properties of continuous composition spreaded (CCS) $BaTiO_3-SrTiO_3$ (BST) thin filmsgrown at room temperature and annealed at different temperature ($350^{\circ}C$ and $550^{\circ}C$) were investigated. Moreover, electrical properties (leakage current and breakdown voltage) of CCS BST thin films were also investigated. The aluminum top-electrode, sized by $200{\times}200\;{\mu}m2$ and apart from each other by $300\;{\mu}m$, were deposited on the CCS BST thin films by the DC sputtering system. The dielectric properties of the CCS BST thin films were significantly influenced depending on the distance from $BaTiO_3$ and $SrTiO_3$ targets which was attributed to the $BaTiO_3-SrTiO_3$ composition ratio. The maps of dielectric constants and loss tangents were plotted via $1500\;{\mu}m$ - step measuring. The specific points showing the dielectric constant (k: ~300) and loss tangent (tand: ~0.008) at 1 MHz were found.

• Applied Chemistry for Engineering
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• v.3 no.3
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• pp.412-421
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• 1992

The superconducting thin films have shown a growing possibility for practical application in microelectronic fields in recent years. In this study, the high Tc superconducting Y-Ba-Cu-O thin films were prepared on various substrates by chemical vapor deposition method using organic metal chelates of $Y(thd)_3$, $Ba(thd)_2$, and $Cu(thd)_2$ as source materials. The deposition reactions were carried out on single crystalline MgO(100), YSZ(100), $SrTiO_3(100)$, and polycrystalline $SrTiO_3$ substrates. Deposition thickness of thin films was linearly increased with the increase of deposition time. It turned out that the Y-Ba-Cu-O thin films on MgO(100), YSZ(100), and $SrTiO_3(100)$ single crystal substrates showed superconductivities above liquid nitrogen temperature($T_{c,onset}=87{\sim}89K$, $T_{c,zero}=85{\sim}86K$), but the one on polycrystalline $SrTiO_3$ substrate did not.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.125-128
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• 1999

(Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature by Pulsed Laser Deposition(PLD). This BST thin films showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~684 and dielectric loss was ~0.01 when substrate temperature was 75$0^{\circ}C$. Charge storage density of BST thin film was 4.733 [$\mu$C/$\textrm{cm}^2$] and estimated charging time was 0.15 nsec. Leakage current density of BST thin film was below 10$^{-7}$ [A/$\textrm{cm}^2$] at 3V. 3V.V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.122-125
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• 1999

(Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature and oxygen pressure by Pulsed Laser Deposition(PLD). Energy Dispersive Spectroscopy(EDS) proved that BST thin films prepared by PLD have almost the same stoichiometric composition as the BST target materials. This BST thin films were fully crystallized at $650^{\circ}C$, 300mTorr oxygen pressure and showed a maximum dielectric constant value of $\varepsilon$$_{t}$=684 and dielectric loss was 0.01 at 75$0^{\circ}C$, 300mTorr oxygen pressure.ssure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.290-293
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• 1999

(Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ thin films were fabricated at different RTA temperatures and thicknesses by Sol-Gel method. Solution consisting of acetate powders and titanium isopropoxide in a mixture of acetic acid and ethylene glycol were spin coated onto Pt/Ti/SiO$_2$/Si substrates. The films were annealed in the temperature range of 650~80$0^{\circ}C$ for 3 minutes by rapid thermal annealing. These BST thin films were fully crystallized at 75$0^{\circ}C$ and showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~468 and dielectric loss was ~0.025 at a thickness of approximately 4000$\AA$.EX>.>.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.798-800
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• 1998

(Ba,Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as f power, do bias voltage, and chamber pressure. The etch rate was $560{\AA}/min$ under Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2, rf power of 600 W, do bias voltage of 250 V, and chamber pressure of 5 mTorr, At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba,Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).