• Title/Summary/Keyword: (110) orientation

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SOFTWARE DEVELOPMENT OF HIGH-PRECISION EPHEMERIDES OF SOLAR SYSTEM (II) (태양계 행성의 고정확도 위치계산에 과한 연구(II))

  • 신종섭;안영숙;박필호;박은광;박종옥
    • Journal of Astronomy and Space Sciences
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    • v.12 no.1
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    • pp.78-89
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    • 1995
  • We solved n-body problem about 9 planets, moon, and 4 minor planets with relativistic effect related to the basic equation of motion of the solar system. Perturbations including flgure potential of the earth and the moon and solid earth tidal effect were considered on this relativistic equation of motion. The orientations employed precession and nutation for the earth, and lunar libration model with Eckert's lunar libration model based on J2000.0 were used for the moon. Finally, we developed heliocentric ecliptic position and velocity of each planet using this software package named the SSEG (Solar System Ephemerides Generator) by long-term (more than 100 years) simulation on CRAY-2S super computer, through testing each subroutine on personal computer and short-time(within 800 dyas) running on SUN3/280 workstation. Epoch of input data JD2440400.5 were adopted in order to compare our results to the data archived from JPL's DE 200 by Standish and Newhall. Above equation of motion was integrated numerically having 1-day step-size interval through 40,000 days (about 110 years long) as total computing interval. We obtained high-precision ephemerides of the planets with maximum error, less $than\pm2\times10^{-8}AU(\approx\pm3km)$ compared with DE200 data (except for mars and moon).

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Preparation of Nb doped SrTiO$_3$ Film by Pulsed Laser Deposition and Optimum Processing Conditions (Plused Laser Depositon을 이용한 Nb doped SrTiO$_3$ 박막의 제작과 최적 조건)

  • ;Seishiro Ohya
    • Journal of the Korean Ceramic Society
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    • v.36 no.2
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    • pp.116-121
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    • 1999
  • 0.5 wt%Nb-doped SrTiO3(Nb: STO) thin film was prepared on MgO(100) single crystal substrates by Pulsed Laser Deposition (PLD). The Crystallinity and the orientation of Nb:STO thin films were characterized by XRD with changing the thin film processing condition-oxygen partial pressure, substrate temperature, deposition time and the distance between target and substrate. The orientation of Nb:STO thin film showed (100), (110) and (111) orientations at the substrate temperature of $700^{\circ}C$. The lattice parameter of Nb:STO decreased with increasing Po2 and showed 0.3905 nm at Po2=100 Pa, which was similar to that of the bulk. The thickness of Nb:STO thin film increased with increasing the deposition time and with decreasing the distance between target and substrate.

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Effect of Colloidal Silica on Electredeposited Film from Copper sulfate Bath (황산구리 전해욕의 전착피막에 미치는 콜로이달실리카의 영향)

  • Lee, Sang-Baek;Kim, Byeong-Il;Yun, Jeong-Mo;Park, Jeong-Hyeon
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.413-418
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    • 2001
  • We investigated change of crystal structure, surface morphology and crystal orientation of the electrodeposited film from dispersed $SiO_2$ suspensions (colloidal silica) copper sulfate bath and arse corrosion potentials and physical specific properties. As addition of colloidal silica in copper electrolytic hath, the crystal Particles on filial was fined-down, made uniform and account of particles were increased. Hardness of copper electrodeposited film ascended about 15% and (111), (200) and (311) plane of X-ray diffraction patterns were almost swept away, so preferred orientation chanced from (111) to (110) plane. Also, corrosion potential of electrodeposited copper film was noble with colloidal silica addition.

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Characteristics of c-axis oriented PLT thin films and their application to IR sensor (c-축 배양된 PLT 박막의 특성 및 IR센서 응용)

  • Choi, B.J.;Park, J.H.;Kim, Y.J.;Kim, K.W.
    • Journal of Sensor Science and Technology
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    • v.5 no.3
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    • pp.87-92
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    • 1996
  • The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of $Ar/O_{2}$, and rf power density were $640^{\circ}C$, 10 mTorr, 10 seem, and $1.7\;W/cm^{2}$, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of $8{\times}10^{11}{\Omega}{\cdot}cm$, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450 m V and signal to noise ratio of 7.2.

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Electrodeposition of Nickel from Nickel Sulphamate Baths (설파민산 니켈 도금욕에서의 니켈 전착)

  • Lee, Hong-Ro;Lee, Dong-Nyung
    • Journal of Surface Science and Engineering
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    • v.18 no.3
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    • pp.125-133
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    • 1985
  • About 1 mm thick nickel electrodeposits were obtained from nickel sulphamate baths at 40 to 60$^{\circ}C$ over the range of current densities form 5 to 25 A/$dm^2$. Deposits from above about 1.2V of cathode overpotential had randomly distributed fine grains due to a higher nucleation rate and hence had a high hardness. A deposit obtained at 0.63 V had the [110] orientation with a field oriented fine structure which yield a relatively high hardness. Deposite obtained at the intermediate overpotentials showed the [100] orientation with coarse field oriented structure whose column width tended to decrease with increasing cathode overpotential, which, in turn, gave rise to an increase in hardness. Residual stresses of the deposits measured by X-ray technique were mostly tensile but did not exceed 80 MPa, and were occasionally very small compressive. The cathode current efficiency was above 90% in all the electrolysis conditions, whereas the anode current efficiency varied from 50 to 90% with current density, bath temperature and nickel chloride concentration, among which the chloride was the most influential.

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Oxide perovskite crystals type ABCO4:application and growth

  • Pajaczkowska, A.
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.258-292
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    • 1996
  • In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

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An Investigation of Preferred Orientation and Microhardness of Nickel-Tin and Tin-Zinc Alloy Electrodeposits on Mild Steel (연강에서의 닉켈-주석과 주석-아연합금 전착층의 우성배향와 미소경도에 관한 연구)

  • Ahn, Deog-Su;Pyun, Su-Il
    • Journal of Surface Science and Engineering
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    • v.13 no.3
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    • pp.146-154
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    • 1980
  • The effects of various electrodeposition conditions (deposition temperature and cathode current density) on preferred orientation and microhardness of electrodeposited Ni-Sn and Sn-Zn alloys were studied. At deposition temperatures from 25$^{\circ}$ to 95$^{\circ}C$ and constant cathode current density of 270 and 530 A/$m^2$ Ni-Sn and Sn-Zn were codeposited in chloride-fluoride acid and stannate-cyanide alkaline electrolyte bath respectively. Ni-Sn alloy deposited at temperatures from 25$^{\circ}$ to 35$^{\circ}C$ was composed of single phase of $Ni_3Sn_4$ with 73 wt.% Sn and the one deposited at temperatures from 45$^{\circ}$ to 95$^{\circ}C$ was made of multiphase mixture of NiSn, $Ni_3Sn_2$ and $Ni_3Sn_4$ with nearly equiatomic composition (65.5 wt.% Sn). The random orientation of thermody-namically metastable NiSn phase (hexagonal structure) predominated at deposition temperature range 25$^{\circ}$-45$^{\circ}C$, and the strong (110) preferred orientation was found at 65$^{\circ}$-85$^{\circ}C$ and then disappeared again at 95$^{\circ}C$. The microhardness of Ni-Sn deposits increased with deposition temperature up to 85$^{\circ}C$, and then decreased at constant cathode current density. The preferred orientation and the maximum microhardness were discussed in terms of lattice contractile stress which result from desorption of hydrogen atom absorbed in deposit lattice. The Sn content of Sn-Zn alloy deposits increased with deposition temperature up to 75$^{\circ}C$, and then decreased at constant cathode current density of 530 A/$m^2$. It also decreased with cathode current density up to 530 A/$m^2$, and then increased at constant deposition temperature of 25$^{\circ}C$. Sn-Zn alloy deposits were composed of two-phase mixture of ${beta}$-Sn and Zn. The preferred orientations of ${beta}$-Sn (tetragonal structure) changed with deposition temperature. The microhardness of Sn-Zn deposits decreased with deposition temperature. It also increased with cathode density up to 530 A/$m^2$, and then decreased at constant deposition temperature of 25$^{\circ}C$. The microhardness of Sn-Zn deposits was observed to be determinded more by the Sn content than by the preferred orientation.

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The Change of Crystal Structure and Physical Properties of Partially Oriented Polyester Yarn(POY) on the Draw Ratio and Heat Setting Temperature (연신비와 열고정 온도에 따른 Partially Oriented Polyester Yarn(POY)의 구조변화와 물성)

  • 박명수;윤종호
    • Textile Coloration and Finishing
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    • v.12 no.2
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    • pp.103-110
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    • 2000
  • To examine the physical properties of POY through the microstructure control, the crystal structure such as the crystallinity, the crystallite size, the orientation, the shrinkage, the tensile properties, and the thermal stress of POY(80/48, SD) were examined at different draw ratios and annealing temperatures. From the examination following conclusions were obtained : 1. The crystallinity was more effected by the heat setting temperature than by the draw ratio. The increasing rate was greatest at the heat setting temperature range of $170~190^\circ{C}$. 2. The crystallite size perpendicular to the fiber axis was more effected by the annealing temperature at lower draw ratios. On the other hand, the crystal and amorphous orientations were more effected by the heat setting at higher draw ratios. 3. The boiling shrinkage did not change significantly, but the total shrinkage showed 13% at the draw ratio 1.9 and the heat setting temperature $170^\circ{C}$. 4. The maximum thermal stress increased with increasing the draw ratio and decreasing the heat setting temperature in the temperature range of $170~210^\circ{C}$. At the draw ratio 1.9 and the heat setting temperature $170^\circ{C}$, the maximum thermal stress found was 1.1gf/d. 5. In the heat setting temperature above $170^\circ{C}$ after the drawing, the crystallinity, the crystallite size, the orientation, and the strength increased with increasing temperature, but the shrinkage and the maximum thermal stress decreased with increasing temperature.

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Properties of Cr-N Films Prepared by the Arc-induced Ion Plating (아아크방전 유도형 이온플레이팅에 의한 Cr-N 피막의 특성)

  • Jeong, Jae In;Mun, Jong Ho;Hong, Jae Hwa;Gang, Jeong Su;Lee, Yeong Baek
    • Journal of Surface Science and Engineering
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    • v.24 no.1
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    • pp.24-24
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    • 1991
  • Cr-N films were deposited on low-carbon steel sheets by the reactive arc-induced ion plating (AIIP). The influence of the deposition conditions (nitrogen pressure and substrate bias voltage) on the crystal orientation, morphology and microhardness of the Cr-N films has been investigated using x-ray diffractometer and scanning electron microscope. The impurities and contaminations on the surface and at the interface, and the layer-by-layer compositions of the film have been analyzed using scanning Auger multiprobe (SAM) and glow discharge spectroscope (GDS). The mixed state of Cr and Cr2N turned out to have a fine fibrous structure. The Cr2N films were deposited at a wide range of nitrogen flow rates. The orientations of Cr2N films were mainly (110) and (111), and the intensity of the (111) peak increased as the substrate bias voltage increased. The micorstructure of the Cr2N film was dense and no columnar structure was observed. The films in the mixed state of Cr2N and CrN were also dense without columnar structure. The maximum microhardness of the Cr-N films was 2400 kg/$\textrm{mm}^2$ at 10gf load.

A Study On the Structure and Mechanical Properties of Polypropylene filament treated with Dry heat treatment at Different draw ratio (연신비를 달리한 Polypropylene filament의 건열처리에 따른 구조와 물성에 관한 연구)

  • Lee, Eun-Woo;Cho, In-Sul
    • Journal of the Korean Society of Industry Convergence
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    • v.2 no.2
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    • pp.61-68
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    • 1999
  • The variety of crystalline structure and mechanical properties of PP filament treated with dry heat treatment at different draw ratio has been studied. Crystalline structure and mechanical properties of annealed PP filament at different draw ratio has been examined by XRD, UTM, and density method. Heat treatment has been carried out $100^{\circ}C$, $120^{\circ}C$ $140^{\circ}C$ for 30min. in dry oven. From the results of this study, it found the following facts. It was found that the crystallinity and crystallite size of (110) plane of sample were increased with increasing of annealed temperature and draw ratio. The crystalline form of annealed sample which was undrawn showed ${\alpha}$, ${\beta}$ mixing form below $120^{\circ}C$ and showed ${\alpha}$ form at $140^{\circ}C$. But the crystalline form of annealed sample which was drawn showed ${\alpha}$ form at $120^{\circ}C$. Initial modulus and tensile strength were increased with increasing of annealing temperature, and the degree of orientation was decreased with decreasing of annealing temperature.

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