• Electrical & Electronic Materials
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• v.8 no.1
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• pp.6-12
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• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.641-643
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• 2003

The ferroelectric properties of PZT(53/47) thin film was investigated by methoxy enthanol solution based on sol-gel method. The thickness of each layer by spincoating 0.25M sol at one time was $0.1{\mu}m$ and crack-free film was formed. $LaNiO_3/Si(100)$ electrode and $Pt/Ti/SiO_2/Si(100)$ electrode was coated by PZT sol at several times. PZT orientation was confirmed as a method of XRD and coercive field(Ec) as well as remnant polarization(Pr) was investigated from hysterisis curve. As a result of XRD analysis, we can know that the orientation of on PZT/LNO/Si(100) is better than on $Pt/Ti/SiO_2/Si(100)$. The remnant polarization(Pr) in LNO electrode was $87.5{\mu}C/cm^2$ and $39.8{\mu}C/cm^2$ in Pt. From this figures, it is investigated that the Pr in LNO electrode was better than in Pt.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.397-402
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• 2012

Morphological control on hydroxyapatite crystals has attractive prospects in research to clarify the effects of crystal planes on biological performance. Hydrothermal processing is known as a typical type of processing for fabricating well-grown crystals with unique morphology. The purpose of the present study is to examine the feasibility of well-crystallized crystals with oriented structures through hydrothermal treatment of calcite. A single crystal of calcite was applied to hydrothermal treatment in a phosphate solution at $160^{\circ}C$. Rod-shaped hydroxyapatite crystals with micrometer-size were formed on the {100} face of calcite after treatment, while nanometer-sized hydroxyapatite crystals were formed on the (111). The hydroxyapatite crystals formed on each plane were not morphologically changed with increasing treatment periods. An oriented structure of rod-shaped hydroxyapatite was constructed after hydrothermal treatment of {100} planes on the calcite single, while such orientation was not observed on the (111) plane after the treatment. The layer of hydroxyapatite formed on the {100} plane was thicker than that of the (111) plane. The {100} plane of calcite shows a higher reactivity than that of the (111) plane, which results in rapid crystal growth of hydroxyapatite. The difference in the morphology of the formed hydroxyapatite was governed by the reactivity of each crystal plane exposed to the surrounding solution.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.343-347
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• 2007

Fe thin films exhibited (100) preferential orientation when they were deposited at low deposition rate of $0.1{\AA}/s$ on glass substrates by using facing target sputtering system. The (100) oriented Fe layer induces (100) orientation of Pt layer deposited on it owing to hetero-epitaxial growth. After annealing at $600^{\circ}C$ in $H_2$ atmosphere, FePt films exhibited f.c.t. (001) texture in the whole film caused by inter-diffusion between atoms. We have also confirmed that the homogeneously inter-diffused compositional modulation in the film after the annealing process. Furthermore, annealing process in $Ar+H_2$ atmosphere at $400^{\circ}C$ during Pt deposition was effective for attaining Pt (100) texture. The annealing process during Pt deposition also induced in low annealing temperature and decreased annealing time for attaining the FePt f.c.t. (001) structure.

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.14-26
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• 1995

The growth mechanism of diamond thin films, deposited by Hot Filament CVD, was investigated through observation of changes in their surface morphology as a function of the substance temperature and deposition time. Amorphous carbon or DLC thin films were deposited at low substrate temperature. Diamond films consisting of square-shaped particles, whose surfaces are (100) planes, were deposited at an intermedate temperature. At high substrate temperatures, diamond films consisting of the particles showing both (100) and (111) plane were deposited. The (100) proferred orientation of the diamond films are believed to be due to a relatively high supersaturation during deposition, and the growth condition for the diamond films having (100) preferred orientation can be applied to the single crystal growth since no twins are generated on the (100) plane. The grain size of the diamond films did not change with increasing temperature and its increasing rate with increasing deposition time was the same irrespective of the substrate temperature. However, the nucleation density increased with substrate temperature and its increasing rate with deposition time was much higher for the films deposited at higher substrate temperature.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.324-329
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• 2000

Microstructure, mechanical and fatigue behaviors of TiCN and TiN/TiCN thin films, deposited on quenched and tempered STD61 tool steel, were investigated by using XRD, XPS, hardness, adhesion and fatigue tests. The TiCN thin film is grown along the (100), (111) orientation, whereas the TiN/TiCN thin film is grown along the (111) orientation. The preferred orientation of TiN/TiCN thin film strongly depends on the TiN buffer layer whose orientation is (111), as is well-known. The TiN/TiCN thin film showed the higher adhesion compared with TiCN single layer because the TiN buffer layer, having good toughness, reduces the effects of the lower hardness of substrate. In the high cycle tension-tension fatigue test, the fatigue life of the TiCN and the TiN/TiCN coated steel increased approximately two to four times and five to nine times respectively compared with uncoated specimens. The TiN buffer layer in multilayer thin films plays an important role in reducing residual stress and fatigue crack initiation, and then in restraining the fatigue propagation.

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.802-808
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• 1996

PbTiO3 thin films were fabricated onto MgO(100) single crystal substrate by reactive D. C magnetron sput-tering of Pb and Ti metal in an oxygen and argon gas mixture. The annealing of the thin films resulted in the decrease of both the c-axis orientation ratio and the lattice parameter. It is well known that the c-axis lattice parameter of thin film is dependent on the Pb/(Pb+Ti)ratio and the residual stress in the film The PbTiO3 thin films with a Pb/(Pb+T) ratio ranging from 0.45 to 0.57 were fabricated and annealed. The structure of the film the c-axis orientation ratio and the lattice parameter were not dependent on the Pb/(Pb+Ti) ratio before and after annealing. These experimental results proved that the decrease of the c-axis lattice parameter under the annealing conditions was due to the relaxation of the intrinsic stress in the film. This relaxation of the intrinsic stress caused the decrease of the c-axis orientation ratio and this phenomenon can be explained by c-axis growth lattice model.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• Structural Engineering and Mechanics
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• v.24 no.5
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• pp.585-599
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• 2006

This paper describes a series of laboratory tests carried out to evaluate the influence of bed joint orientation on interlocking grouted stabilised mud-flyash brick masonry under uniaxial cyclic compressive loading. Five cases of loading at $0^{\circ}$, $22.5^{\circ}$, $45^{\circ}$, $67.5^{\circ}$ and $90^{\circ}$ with the bed joints were considered. The brick units and masonry system developed by Prof. S.N. Sinha were used in present investigation. Eighteen specimens of size $500mm{\times}100mm{\times}700mm$ and twenty seven specimens of size $500mm{\times}100mm{\times}500mm$ were tested. The envelope stress-strain curve, common point curve and stability point curve were established for all five cases of loading with respect to bed joints. A general analytical expression is proposed for these curves which fit reasonably well with the experimental data. Also, the stability point curve has been used to define the permissible stress level in the brick masonry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.550-552
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• 2003

We prepared $Co_{77}Cr_{20}Ta_3$ Magnetic layer for perpendicular magnetic recording media with introduce Two-step methode and Amorphous Si Underlayer on slide glass substrate. The thickness of magnetic layer were 100nm, and Underlayer were varied from 5 to 100 nm. The multi layer Properties of crystal structure were examined with XRD. Prepared thin films showed improvement of dispersion angle of c-axis orientation ${\Delta}{\theta}_{50}$ caused by inserting Buffer-layer and amorphous Si underlayer.