• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.694-698
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• 1988

Pb(Zr, Ti)O3-Pb(Co, Nb)O3 systems were investigated by x-ray diffraction method. System contains rhombohedral, tetragonal, and pseudocubic structures at room temperature. Crystal symmetry was changed from 4-fold symmetry to 3-fold symmetry by substituting Pb(Co1/3, Nb2/3)O3 ; PCN, to Pb(Zr0.52, Ti0.48)O3 ; PZT. As the substituted PCN concentration was increased, an increase in a-axis direction and a decrease in c-axis in the perovskite structure were occurred simultaneously, so that the crystal symmetry was changed into such way. In the higher sinteringtemperatures, the unit cell distortions occurred rather in the lower substitution range of PCN. The ferroelectric properties were maximized at the region that tetragonal and rhombohedral or pseudocubic structures were coexist.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.123-123
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• 1992

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.153.1-153
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• Clean Technology
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• v.23 no.1
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• pp.104-112
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• 2017

Hydrogen production via steam reforming of liquefaction liquid from marine algae over hydrothermal liquefaction was carried out at 873 ~ 1073 K with a commercial catalyst and Ni based $K_2Ti_xO_y$ added catalysts. Liquefaction liquid obtained by hydrothermal liquefaction (503 K, 2 h) was used as a reactant and comparison studies for catalytic activity over different catalysts (FCR-4-02, $Ni/K_2Ti_xO_y-Al_2O_3$, $Ni/K_2Ti_xO_y-SiO_2$, $Ni/K_2Ti_xO_y-ZrO_2/CeO_2$ and Ni/$K_2Ti_xO_y$-MgO), reaction temperature were performed. Experimental results showed Ni/$K_2Ti_xO_y$ based catalysts ($Ni/K_2Ti_xO_y-Al_2O_3$, $Ni/K_2Ti_xO_y-SiO_2$, Ni/$K_2Ti_xO_y-ZrO_2$/ $CeO_2$ and Ni/$K_2Ti_xO_y$-MgO) have a higher activity than commercial catalyst (FCR-4-02) and In particular, a product composition was different depending on support materials. An acidic support ($Al_2O_3$) and a basic support (MgO) led to a higher selectivity for CO while a neutral support ($SiO_2$) and a reducing support ($ZrO_2/CeO_2$) resulted in a higher $CO_2$ selectivity due to water gas shift reaction.

• Journal of Korea Foundry Society
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• v.22 no.2
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• pp.75-81
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• 2002

The main objectives were to investigate the suitability of CaO crucible for melting TiAl alloys and to develop investment mold for investment casting of TiAl alloys. TiAl alloy specimen were prepared by plasma arc furnace under argon atmosphere. After melting of TiAl alloy using CaO crucible, the results showed that there is little contamination of oxygen in the TiAl bulk. Conventional vacuum induction furnaces can be readily adaptable to produce cast parts of TiAl without high skilled techniques. The determination of optical metallography and microhardness profiles in investment cast TiAl alloy rods has allowed the gradation of the relative thermal stability of the oxides examined. The molds used for the present study were $ZrO_2$, $Al_2O_3$, CaO stabilized $ZrO_2$ and $ZrSiO_4$. Even although high temperature of mold preheating, $Al_2O_3$ mold is a promising mold material for investment casting of TiAl alloys in terms of thermal stability, cost and handling strength. It is important to take thermal stability and preheating temperature of mold into consideration for investment casting of TiAl alloys.

• Journal of the Microelectronics and Packaging Society
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• v.2 no.2
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• pp.31-40
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• 1995

Donor dopant로 WO3, Ta2O5 및 Nb2O5를 첨가한 Zr0.8Sn0.2TiO4 세라믹스의 유전상수 $\varepsilon$r 품 질계수 Q 및 공진주파수의 온도계수 rf에 대하여 연구하였다. 139$0^{\circ}C$에서 32시간 소결시 donor dopant 첨가량에 따른 ZST의 유전상수는 소결밀도의 변화 거동과 잘 일치하였다. 5.5 GHz에서 측정 한 ZST의 품질계수 Q는 ~0.5 mol% WO3 Ta2O5 및 Nb2O5 첨가에 의해 6800에서 8500 정도로 증가 하였다. ZST의 $\tau$f는 0.3 mol%까지의 WO3 첨가량 증가에 따라 0 ppm/$^{\circ}C$에서 -4.6 ppm/$^{\circ}C$까지 음 의 값으로 직선적으로 감소하였으며 0.4 mol% 범위의 Ta2O5 및 Nb2O5 첨가에 의해 -7 ppm/$^{\circ}C$ 까지 직선적으로 감소하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.108-108
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• 2000

급증하는 무선통신 정보수요는 특히, 고주파대역 (300NHz-300GHz)에서 사용되는 공진기, 필터, 발진기 등과 같은 소자의 품질향상을 요구하고 있다. 고주파용 유전체 중 ZrTiO4 는 $\alpha$-PbO2 계열의 사방정구조를 갖고 있는 유전체로서 높은 유전율 ($\varepsilon$=40)과 높은 품질계수 (Q=1/tan$\delta$=4700 at 7GHz)를 갖고 있고, Sn 첨가시 0ppm/$^{\circ}C$의 공진주파수 온도계수를 얻을 수 있다고 보고되어 있다. 본 연구에서는 약 110$0^{\circ}C$ 이상에서 안정한 상으로 존재하는 ZrTiO4를 저온에서 증착하여 준안정한 상태로 결정화되게 한후, 유전손실 (tan$\delta$)과 유전율($\varepsilon$)을 측정하였다. 또한 증착온도와 열처리과정에 따른 박막의 us형 (Strain) 정도의 변화를 X-선 회절결과로부터 분석하였으며 이를 측정된 유전특성 값과 비교하였다. ZrTiO4 박막은 DC magnetron reactive sputter로 Zr과 Ti 타겟으로부터 high phosphorous doped Si (100) 기판위에 증착하였다. 압력은 4mTorr로 유지하고 박막의 화학양론적 조성비를 맞추기 위해 각 타겟에 가해지는 power는 Zr/Ti=500W/650W로 고정하고, 반응가스의 비율을 Ar/O2=17sccm/3.5sccm으로 유지하여 박막내에 인입되는 산소량을 제어하였다. 증착 직후와 열처리 후의 박막특성을 비교하기 위해 증착온도를 상온에서부터 $600^{\circ}C$까지 변호시키고 증착후 각각의 시편을 80$0^{\circ}C$ 산소분위기에서 2시간동안 열처리하여 시편을 준비하였다. 박막의 상형성 여부와 결정성변화는 $ heta$-2$\theta$X-선 회절법을 사용하여 조사하였고, EPMA를 이용하여 박막의 조성을 확인하였다. 유전특성의 측정을 위해 백금 상부전극을 증착한 후, impedance analyzer를 이용하여 100kHz 영역에서의 유전손실을 측정하고, 측정된 정전용량과 박막의 두께로부터 유전율을 계산하였다. ZrTiO4 박막은 증착온도 20$0^{\circ}C$ 이상에서 결정성을 보이기 시작했으며, 열처리 이후에는 상온에서 비정질이었던 시편이 $650^{\circ}C$ 이상의 온도에서 결정화되기 시작하였다. 증착온도에 따라 유전손실은 0.038에서 0.017 정도로 감소하는 경향을 나타냈으며, 각각 열처리에 의해서 0.034, 0.005 정도로 다시 감소하였다. 박막의 유전율은 약 35 정도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.223-228
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• 2017

In this study, in order to develop composition ceramics for refrigeration device application at a temperature of less than $90^{\circ}C$, a $Ba(Ti_{1-x}Zr_x)O_3$ composition was fabricated using a conventional solid-state method. Electrocaloric properties of these ceramics were investigated using the characteristics of P-E hysteresis loops in a wide temperature range from room temperature to $150^{\circ}C$. The Curie temperature of $Ba(Ti_{1-x}Zr_x)O_3$ ceramics decreased with the increase of x. The maximum value of ${\Delta}T=0.07^{\circ}C$ in an ambient temperature of $85^{\circ}C$ under 30 kV/cm appeared when x = 0.125. It was concluded that the composition (x = 0.125) ceramics can be used for refrigeration device applications.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.253-256
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• 1997

Epitaxially grown Pb(Zr, Ti)O$_3$thin films were prepared on LaAlO$_3$substrates by the dipping pyrolysis process using metal naphthenates as starting materials Homogeneous Pb-Zr-Ti solutions with toluene were spin-coated onto the substrates and pyrolyzed at 50$0^{\circ}C$ Highly oriented Pb(Zr, Ti)O$_3$films confirmed by X-ray diffraction $\theta$-2$\theta$ scans were obtained by heat-treated at 75$0^{\circ}C$ in air The X-ray pole-figure analysis and reciprocal-space mapping of the resulting 0.6$\mu\textrm{m}$ films showed that the thin films comprising the c-axis oriented tetragonal phase have an epitaxial relationship with the LaAlO$_3$substrates.