• Korean Journal of Materials Research
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• v.27 no.1
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• pp.12-18
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• 2017

Transparent organic-inorganic hybrid hard coating films were prepared by the addition of $SiO_2$ or $ZrO_2$, as an inorganic filler to improve the hardness property, filler was highly dispersed in the acrylic resin. To improve the compatibility in the acrylic resin, $SiO_2$ or $ZrO_2$ is surface-modified using various silanes with variation of the modification time and silane content. Depending on the content and kind of the modified inorganic oxide, transparent modified inorganic sols were formulated in acryl resin. Then, the sols were bar coated and cured on PET films to investigate the optical and mechanical properties. The optimized film, which has a modified $ZrO_2$ content of 4 wt% markedly improved in terms of the hardness, haze, and transparency as compared to neat acrylate resin and acrylate resin containing modified $SiO_2$ content of 8 wt%. Meanwhile, the low transparency and high haze of these films slowly appeared at $SiO_2$ content above 10 wt% and $ZrO_2$ content of 5 wt%, but the hardness values were maintained at 2H and 3H, respectively, in comparison with the HB of neat acrylate resin.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.9
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• pp.434-441
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3\;and\;Y_2O_3$) as a sintering aid. The relative density and mechanical properties are increased markedly at temperatures in the range of $1,850{\sim}1,900[{^\circ}C]$. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 81.1[%], 230[MPa], 9.88[GPa] and $6.05[MPa\;m^{1/2}]$ for $SiC-ZrB_2$ composites of $1,900[{^\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[{^\circ}C]\;to\;700[{^\circ}C]$, The electrical resistivity showed the value of $1.36{\times}10^{-4},\;3.83{\times}10^{-4},\;3.51{\times}10^{-4}\;and\; 3.2{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $4.194{\times}10^{-3},\;3,740{\times}10^{-3},\;2,993{\times}10^{-3},\;3,472{\times}10^{-3}/[^{\circ}C}$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively in the temperature ranges from $25[{\circ}C]\;to\;700[{\circ}C]$, It is assumed that because polycrystallines such as recrystallized $SiC-ZrB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-ZrB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Journal of the Korean Ceramic Society
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• v.47 no.3
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• pp.249-255
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• 2010

To investigate optical properties of (V, Pr)-doped $ZrSiO_4$ green pigments, samples were prepared by the ceramic method using NaF and NaCl as mineralizers. They were characterized by X-ray diffraction, UV-Vis spectroscopy and Raman spectroscopy. The changes of color in the samples during heating and effect of mineralizers were studied in terms of valence of the vanadium and praseodymium in the zircon matrix. (V, Pr)-doped $ZrSiO_4$ pigments give rise to green coloration in $800^{\circ}C$. The oxidation state of V and Pr ions of pigments in the glazed samples were confirmed by UV-Vis absorption spectra. This absorption spectra showed three typical bands of trivalent Pr at the 445, 480~490, 592 nm due to f-f transitions and two broad bands of 302~380, 400~500 nm due to f-d transitions of tetravalent Pr. According to the increasing amounts of $Pr_6O_{11}$, the two broad bands showed decreasing intensity at 290, 640 nm due to d-d transitions of tetravalent V.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1602-1608
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• 2007

The composites were fabricated, respectively, using 61[vol.%] SiC-39[vol.%] $TiB_2$ and using 61[vol.%] SiC-39[vol.%] $ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the Liquid-Phase-Sintered(LPS) $SiC-TiB_2$, and $SiC-ZrB_2$ composite. $\beta\rightarrow\alpha-SiC$ phase transformation was occurred on the $SiC-TiB_2$ and $SiC-ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 249.42[MPa] and 91.64[GPa] in $SiC-ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[\Omega{\cdot}cm]$ for $SiC-ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the lowest value of $1.319\times10^{-3}/[^{\circ}C]$ for $SiC-ZrB_2$ composite in the temperature ranges from $100[^{\circ}C]$ to $300[^{\circ}C]$ Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• Tribology and Lubricants
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• v.13 no.1
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• pp.34-41
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• 1997

Frictional behavior of three automotive friction materials (brake pads) containing different amounts of antimony trisulfide ($Sb_2S_3$) and zirconium silicate ($ZRSiO_4$) were investigated using a front brake system. The friction materials were tested on a brake dynamometer (dyno) with gray cast iron rotors. The dynamometer(dyno) test simulated the dragging of a ehicle maintaining 70 km/h and vehicle stops from 100 km/h using 20 different combinations of initial brake temperature (IBT) and input pressure (IP). The results showed a strong influence of the relative amount of $Sb_2S_3$ and $ZrSiO_4$ in friction materials on friction characteristics. Friction stability was improved with the higher concentration of $Sb_2S_3$ in the friction material. Torque variation during drag cycle was increased with an increase of the $ZrSiO_4$ concentration in the friction material. Average friction coefficient and the wear rate of the friction material increased by using more aggressive friction materials containing more $ZrSiO_4$ and less $Sb_2S_3$. Generation of the disk thickness variation (DTV) increased when friction materials with higher concentration of $ZrSiO_4$ were used Careful examination of DTV change showed that aggressiveness of the friction material played an important role in determining torque variation.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.83.1-83
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.291-294
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• 1999

The effect of AI$_2$O$_3$+Y$_2$O$_3$additives on fracture toughness of $\beta$-SiC-ZrB$_2$composites by hot-pressed sintering were Investigated. The $\beta$-SiC-ZrB$_2$ ceramic composites were hot-presse sintered and annealed by adding 1, 2, 3wt% AI$_2$O$_3$+Y$_2$O$_3$(6:4wt%) powder as a liquid forming additives at 195$0^{\circ}C$ for 4h. In this microstructures, no reactions were observed between $\beta$-SiC and ZrB$_2$, and the relative density Is over 90.79% of the theoretical density and the porosity decreased with increasing AI$_2$O$_3$+Y$_2$O$_3$ contents. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed the highest of 5.5328MPa . m$^{1}$2/ for composites added with 2wt% AI$_2$O$_3$+Y$_2$O$_3$ additives at room temperature. But the standard deviation of fracture toughness of specimens decreased with increasing AI$_2$O$_3$+Y$_2$O$_3$ contents and showed the highest of 0.8624 for composite tilth 1wt%, AI$_2$O$_3$+Y$_2$O$_3$additives.

• Transactions of the Korean Society of Automotive Engineers
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• v.22 no.7
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• pp.144-151
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• 2014

Recently, according to the advances of vehicle manufacturing technology and the fuel-efficient vehicles, the weight of the vehicle body has been reduced and quietness of the vehicle has been increased. So that, as the emotional qualities of cars, such as NVH, are emphasized in recent years. Also required to be established of the effective measure for brake Judder. The Judder was caused by the increase in DTV by the uneven thermo metamorphosis of brake disc and the partial abrasion of disc. In this study, the disc aggression by friction materials was confirmed and the improving methods of friction materials in connection with the abrasive characteristics reviewed of $ZrSiO_4$ each particle size(under $3{\mu}m$, $5{\sim}10{\mu}m$ and over $15{\mu}m$). In addition, the study is institute make use of limit for $ZrSiO_4$ raw-material particle size and vol% in friction materials. At the result, the optimum size of $ZrSiO_4$ particles was confirmed about 5 to $10{\mu}m$.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1303-1304
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• 2007

The composites were fabricated, respectively, using 61[vol.%]SiC-39[vol.%]$TiB_2$ and using 61[vol.%]SiC-39[vol.%]$ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_{2}O_{3}+Y_{2}O_{3}$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was occurred on the SiC-$TiB_2$ and SiC-$ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 226.06[Mpa] and 86.38[Gpa] in SiC-$ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SiC-$ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the SiC-$TiB_2$ and SiC-$ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the value of $6.88{\times}10^{-3}/[^{\circ}C]$ and $3.57{\times}10^{-3}/[^{\circ}C]$ for SiC-$ZrB_2$ and SiC-$TiB_2$ composite in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$.