• 대한금속재료학회지
• /
• 제48권7호
• /
• pp.625-629
• /
• 2010

This study investigates the effects of porosity on the thermal stability and the thermal shock resistance of a porous nozzle used for blowing an inert gas. The samples of $Al_2O_3-SiO_2-ZrO_2$ system, which had the apparent porosity of 16~30% and bulk density of $2.6{\sim}3.2g/cm^3$, were prepared by adding different graphite contents (5, 10, 20 wt%) as a pore-forming agent. The thermal shock test was conducted at ${\Delta}T=500$, 1000, and $1400^{\circ}C$ also and the thermal stability was also carried out at 1550, 1600, and $1650^{\circ}C$ for 5 hrs. The specimen contained 10 wt% graphite had uniform pore size distribution, whereas the specimen with 20 wt% graphite showed non-uniform pore size distribution. As a result of thermal shock test, the specimen containing 10 wt% graphite appears to have higher mechanical strength than the other specimens (5, 20 wt% graphite). Both the 5 wt% and 20 wt% graphite specimens developed a non-uniform pore size distribution and cracks that were generated by intensive thermal stress.

• 마이크로전자및패키징학회지
• /
• 제18권3호
• /
• pp.9-17
• /
• 2011

Nano-composite solders have been studied to improve the properties of Pb-free solder joints. The nanoparticles in the composite solders were carbon nanotubes(CNTs), metals (Ag, Ni, Cr, etc.), ceramics (SiC, $ZrO_2$, $TiB_2$, etc.). To fabricate the nano-composite solders, mechanical mixing methods and in-situ fabrication method has been used for well-dispersed nano phase. The characteristic properties of the nano-composite solders were high creep resistance, low undercooling, low IMC growth rate and fine microstructures. More researches on the nano-composite solders are required to improve the processibility and the reliability of the nano-composite solder joints.

• Journal of Welding and Joining
• /
• 제32권1호
• /
• pp.40-46
• /
• 2014

Bonding technology and bonding mechanism of metal to ceramic including brazing, diffusion bonding, friction welding and etc were reviewed in this study. Various factors should be considered from a bonding design step to acquire a good bonding joint because of a large difference between metal and ceramic in crystal lattice, coefficient of thermal expansion and various properties. In addition, metal and ceramic bonding technologies are constantly being developed according to precise components, multi-function and application to harsh environment. However, improvement of bonding properties and bonding reliability also should be accompanied. Bonding of ceramics, such as $ZrO_2$, $Ti_3AlC_2$ and SiC, to metals like Ti-alloy, TiAl and steel were described in this paper.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제8권1호
• /
• pp.66-79
• /
• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• 자원환경지질
• /
• 제40권5호
• /
• pp.675-689
• /
• 2007

킬라우에아 화산 정상 분화구는 16세기 이래로 계속적이고도 간헐적인 분출활동을 통하여 형성되어진 화산으로서 1790년부터 1982년 9월까지 분출된 현무암의 체계적인 연도별 시료채취를 바탕으로 미량원소와 희토류원소의 특징을 고찰하였다. 주요 정출광물로는 감람석, 단사휘석, 사장석이 있으며 소량의 불투명광물인 크롬스피넬, 티탄철석이 관찰된다. Zr, V, Y, Ti 등과 같은 미량원소들은 MgO로 나타나는 감람석에 대해서 불호정성을 나타내며 Ni, Cr, Co 는 감람석에 대해서 매우 강한 호정성을 나타낸다. Ba, Rb, Th, Sr, Nd 원소들은 불호정성을 나타내어 $K_2O$와 정(+)의 관계를 뚜렷이 나타낸다. 희토류원소를 콘드라이트에 표준화시킨 REE도표에서 LREE가 HREE보다 더 부화된 패턴을 보이는 전형적인 화산호현무암(OIB)을 지시한다. Si에서 약간의 변곡 현상으로부터 소량의 사장석 분별결정작용에 Sr이 관여한 것을 확인할 수 있었다. Y/Ho, Zr/Hf 비로부터 마그마로 유입되는 외부적인 유체(해수 혹은 지하수)의 영향을 고려해 보았을 때 유체의 영향은 거의 나타나지 않았으며 Zr/Hf에서 푸오오(PuuOo)분출암과 킬라우에아(Kilauea)정상 분화구 분출 현무암과의 뚜렷한 차이를 발견하였다. 분출 시대별 미량원소의 함량변화를 관찰하였으며 특히 1921년에서 1954년 사이 동안에 마그마 성분의 급작스런 변화에 의해 그 이전의 대체로 증가하던 미량원소의 함량이 감소하는 경향으로 바뀌게 되었다. 이러한 경향은 킬라우에아 정상 분화구의 분출이 끝나고 계속된 푸오오 분출 현무암의 미량원소의 거동 또한 감소하는 경향을 따르고 있다. 1924년 할레마우마우 분화구가 함락 붕괴되어 지각성분의 마그마 저장소로의 유입과 마그마 저장소 아래에서 공급되는 모마그마의 성분변화에 의해서 미량원소 함량이 급격하게 변한 것으로 해석된다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 D
• /
• pp.1553-1555
• /
• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• 암석학회지
• /
• 제14권2호
• /
• pp.83-92
• /
• 2005

최근 화강암의 옛저콘(inherited zircon)의 존재여부로써 마그마 생성온도를 상대적으로 저온화강암과 고온화강암으로 구분할 수 있음이 제안되었으며, 이는 저콘 포화온도와 밀접하게 관련이 있음이 밝혀졌다. $SiO_2-Zr$ 그림에서 남한의 현생이언 화강암들은 고Zr 화강암과 저Zr 화강암으로 구분된다. 이들 구분은 관입시기와 관련된 것으로 보인다. 트라이아스-쥬라기 화강암들은 거의 대부분 저Zr 화강암에 속한다. 반면 백악기-제3기초 화강암들은 대부분 고Zr 화강암에 해당하나, 마산-진해 화강암은 저Zr 화강암에 속하여 지리적 차이를 보인다. 주성분원소와 Zr 함량을 이용하여 저콘 포화온도를 계산하면 저Zr 화강암(마산진해 화강암, 평균 $759\times16^{\circ}C$)을 제외한 경상분지의 백악기-제3기초 화강암 $(608-834^{\circ}C,\;평균\;782\times31^{\circ}C$)이 트라이아스_쥬라기 화강암 ($642-824^{\circ}C$, 평균 $756\pm31^{\circ}C$)보다 높은 온도를 지시한다. 현재까지 알려진 트라이아스-쥬라기 화강암의 U-Pb 저콘 연대 자료는 모두 콘코디아 그림에서 디스코디아를 정의하는데 이는 옛저콘의 존재를 지시하며 낮은 저콘 포화온도와 조화적이다. 반면에 상대적으로 높은 저콘 포화온도를 가지는 백악기-제3기초 화강암의 경우 옛저콘의 존재에 대하여 아직 알려진 바가 없기 때문에 고온 혹은 저온 화강암에 해당하는지를 판단할 수 없다. 그럼에도 불구하고 저콘 포화온도는 마그마 생성, 온도를 어느 정도 반영하기 때문에 백악기-제3기초 화강암은 트라이아스-쥬라기 화강암보다 높은 온도에서 생성되었음을 시사한다.

• 한국진공학회지
• /
• 제2권4호
• /
• pp.416-423
• /
• 1993

Hydrogen depth profiling was performed by H(19F, $\alpha$${\gamma}$) nuclear resonance reactin . A cesium sputtering ion sorce and 1.7MV Tandem Van de Graaff accelerator was used for the production of 6.5MeV 19F ion. The ${\gamma}$ rays produced by the reaction were measure dby 3" $\times$3" and 6" $\times$8" Nal detectors . A test measurement was done for hydrogen contaminatin layer of a bare silicon wafer, Si3N4(H) and Zr(O)a-Si/Si for the purpose of verifying the applicability , detection limit and the reliability of the method.ility of the method.

• 한국재료학회지
• /
• 제28권11호
• /
• pp.611-614
• /
• 2018

Laminate composites composed of $0.95Pb(Zr_{0.52}Ti_{0.48})O_3-0.05Pb(Mn_{1/3}Sb_{2/3})O_3$ piezoelectric ceramic and Fe-Si-B based magnetostrictive amorphous alloy are fabricated, and the effect of control of the areal dimensions and the thickness of the piezoelectric layer on the magnetoelectric(ME) properties of the laminate composites is studied. As the aspect ratio of the piezoelectric layer and the magnetostrictive layer increases, the maximum value of the ME voltage coefficient(${\alpha}_{ME}$) increases and the intensity of the DC magnetic field at which the maximum ${\alpha}_{ME}$ value appears decreases. Moreover, as the thickness of the piezoelectric layer decreases, ${\alpha}_{ME}$ tends to increase. The ME composites exhibit ${\alpha}_{ME}$ values higher than $1Vcm^{-1}Oe^{-1}$ even at the non-resonance frequency of 1 kHz. This study shows that, apart from the inherent characteristics of the piezoelectric composition, small thicknesses and high aspect ratios of the piezoelectric layer are important dimensional determinants for achieving high ME performance of the piezoelectric-magnetostrictive laminate composite.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
• /
• pp.93-96
• /
• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.