• Proceedings of the KWS Conference
• /
• 2004.05a
• /
• pp.223-225
• /
• 2004

Based on the principle of complementary energy an analytical method is developed for determining thermal stress distribution in an thermal barrier coating. This method gives the stress distributions which satisfy the stress-free boundary conditions at the edge. Numerical examples are given in order to verify the method and to investigate the thickness effects of the ZrO$_2$-8wt%Y$_2$O$_3$ top coat on the integrity of thermal barrier coating consisted of IN738LC substrate and MCrAlY bond coat.

• Corrosion Science and Technology
• /
• v.2 no.3
• /
• pp.155-160
• /
• 2003

Plasma spraying technique was used to fabricate functionally graded coating (FGC) of NiCrAIY/YSZ 8wt%$Y_2O_3-ZrO_2$ on a Co-base superalloy (HAYNES 188) substrate. Six layers were coated on the substrate for building up compositionally graded architecture. Conventional thermal barrier coating (TBC) of NiCrAIY/SZ with sharp interface was also fabricated. As-coated FGC and TBC samples were exposed at the temperature of $1100^{\circ}C$ for 10, 50, 100 hours in air. Microstructural change of thermally exposed samples was examined. Pores and microcracks were formed in YSZ layer due to evolution of thermal internal stress at high temperature. The amount of pores and microcracks in YSZ layer were increased with increasing exposure time at high temperature. High temperature oxidation of coatings occurred mainly at the NiCrAIY/YSZ interface. In comparison with the case of TBC. the increased area of the NiCrAIY/YSZ interface in FGC is likely to attribute to forming the higher amount of oxides.

• Korean Journal of Materials Research
• /
• v.14 no.5
• /
• pp.368-373
• /
• 2004

To improve the conventional cathode-supported tubular solid oxide fuel cell (SOFC) from the viewpoint of low cell power density, expensive fabrication process and high operation temperature, the anode-supported tubular solid oxide fuel cell was investigated. The anode tube of Ni-8mol% $Y_2$O$_3$-stabilized $ZrO_2$ (8YSZ) was manufactured by extrusion process, and, the electrolyte of 8YSZ and the multi-layered cathode of $LaSrMnO_3$(LSM)ILSM-YSZ composite/$LaSrCoFeO_3$ were coated on the surface of the anode tube by slurry dip coating process, subsequently. Their cell performances were examined under gases of humidified hydrogen with 3% water and air. In the thermal cycle condition of heating and cooling rates with $3.33^{\circ}C$/min, the anode-supported tubular cell showed an excellent resistance as compared with the electrolyte-supported planar cell. The optimum hydrogen flow rate was evaluated and the air preheating increased the cell performance due to the increased gas temperature inside the cell. In long-term stability test, the single cell indicated a stable performance of 300 mA/$\textrm{cm}^2$ at 0.85 V for 255 hr.

• Journal of the Korean Ceramic Society
• /
• v.42 no.12 s.283
• /
• pp.787-792
• /
• 2005

A symmetrical LSCF $(La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta})\;ScSZ(89ZrO_2-10Sc_2O_3-1CeO_2)/LSCF$ electrochemical cell with a GDC (Gadolinium-Doped Ceria, $90CeO_2-10Gd_2O_3$) interlayer that was inserted between the LSCF cathode and ScSZ electrolyte was fabricated, and the electrochemical performance of these cells was evaluated. The GDC interlayer was deposited on a ScSZ electrolyte using a screen-printing technique. The GDC interlayer prevented the unfavorable solid-state reactions at the LSCF/ScSZ interfaces. The LSCF cathode on the GDC interlayer had excellent electrocatalytic performance even at $650^{\circ}C$. The Area Specific Resistance (ASR) was strongly dependent on the thickness and heat-treatment temperature of the GDC interlayer. The impedance spectra showed that the cell with a $15\~27{\mu}m$ thick GDC interlayer heat-treated at $1200^{\circ}C$ had the lowest ASR.

• Journal of the Korean Ceramic Society
• /
• v.28 no.8
• /
• pp.654-660
• /
• 1991

Stabilized Zirconia (3 mol % Yttria, 3Y-TZP) was joined with intermetallic compound NiTi which has similar thermal expansion coefficient. The optimum bonding condition was determined by the Taguchi Method. Under the optimum bonding condition, the 4-point bending strength was as high as 400 MPa. bonding interfaces were examined by optical microscope, SEM, and TEM; reaction products were identified by XRD and TEM, The relationship between products and strength was examined.

• Journal of the Korean Ceramic Society
• /
• v.51 no.4
• /
• pp.271-277
• /
• 2014

To overcome the limitations of the solid oxide fuel cells (SOFCs) due to the high temperature operation, there has been increasing interest in proton conducting fuel cells (PCFCs) for reduction of the operating temperature to the intermediate temperature range. In present work, the perovskite $BaCe_{0.85-x}Zr_xY_{0.15}O_{3-\delta}$ (BCZY, x = 0.1, 0.3, 0.5, and 0.7) were synthesized via solid state reaction (SSR) and adopted as an electrolyte materials for PCFCs. Powder characteristics were examined using X-ray diffraction (XRD), thermogravimetric analysis (TGA) and Brunauer, Emmett and Teller (BET) surface area analysis. Single phase BCZY were obtained in all compositions, and chemical stability was improved with increasing Zr content. Anode-supported cell with $Ni-BaCe_{0.55}Z_{0.3}Y_{0.15}O_{3-\delta}$ (BCZY3) anode, BCZY3 electrolyte and BCZY3-$Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-\delta}$ (BSCF) composite cathode was fabricated and electrochemically characterized. Open-circuit voltage (OCV) was 1.05 V, and peak power density of 370 ($mW/cm^2$) was achieved at $650^{\circ}C$.

• Proceedings of the Korea Crystallographic Association Conference
• /
• 2002.11a
• /
• pp.42-43
• /
• 2002

반도체 디바이스의 발전은 높은 직접화 및 동작 속도를 추구하고 있으며, 이를 위해서 MOSFET의 scale down시 발생되는 문제를 해결해야만 한다. 특히, Channel이 짧아짐으로써 발생하는 device의 열화현상으로 동작전압의 조절이 어려워 짐을 해결해야만 하며, gate oxide 두께를 줄임으로써 억제할 수 있다고 알려져 왔다. 현재, gate oxide으로 사용되고 있는 SiO2박막은 비정질로써 ～8.7 eV의 높은 band gap과 Si기판 위에서 성장이 용이하며 안정하다는 장점이 있으나, 두께가 1.6 nm 이하로 얇아질 경우 전자의 direct Tunneling에 의한 leakage current 증가와 gate impurity인 Boron의 channel로의 확산, 그리고 poly Si gate의 depletion effect[1,2] 등의 문제점으로 더 이상 사용할 수 없게 된다. 2001년 ITRS에 의하면 ASIC제품의 경우 2004년부터 0.9～l.4 nm 이하의 EOT가 요구된다고 발표하였다. 따라서, gate oxide의 물리적인 두께를 증가시켜 전자의 Tunneling을 억제하는 동시에 유전막에 걸리는 capacitance를 크게 할 수 있다는 측면에서 high-k 재료를 적용하기 위한 연구가 진행되고 있다[3]. High-k 재료로 가능성 있는 절연체들로는 A1₂O₃, Y₂O₃, CeO₂, Ta₂O, TiO₂, HfO₂, ZrO₂,STO 그리고 BST등이 있으며, 이들 재료 중 gate oxide에 적용하기 위해 크게 두 가지 측면에서 고려해야 하는데, 첫째, Si과 열역학적으로 안정하여 후속 열처리 공정에서 계면층 형성을 배제하여야 하며 둘째, 일반적으로 high-k 재료들은 유전상수에 반비례하는 band gap을 갖는 것으로 알려줘 있는데 이 Barrier Height에 지수적으로 의존하는 leakage current때문에 절연체의 band gap이 낮아서는 안 된다는 점이다. 최근 20이상의 유전상수와 ～5 eV 이상의 Band Gap을 가지며 Si기판과 열역학적으로 안정한 ZrO₂[4], HfiO₂[5]가 관심을 끌고 있다. HfO₂은 ～30의 고유전상수, ～5.7 eV의 높은 band gap, 실리콘 기판과의 열역학적 안전성 그리고 poly-Si와 호환성등의 장점으로 최근 많이 연구가 진행되고 있다. 또한, Hf은 SiO₂를 환원시켜 HfO₂가 될 수 있으며, 다른 silicide와 다르게 Hf silicide는 쉽게 산화될 수 있는 점이 보고되고 있다.

• Korean Journal of Materials Research
• /
• v.8 no.12
• /
• pp.1170-1175
• /
• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.21 no.8
• /
• pp.222-227
• /
• 2020

Pb(Zr,Ti)O₃(denoted as PZT) in the perovskite phase is used as a dielectric, piezoelectric, and super appetizer material owing to its ferroelectric properties. A PZT film was formed by an RF magnetron sputtering process by preparing a target composed of Pb_1.3(Zr_0.52Ti_0.48)O₃. The PZT film was formed by dividing the material into a mono-layer PZT produced continuously with the same sputtering power and a bi-layer PZT produced with two-stage sputtering power. The bi-layer PZT consisted of a lower layer produced under low-power sputtering conditions and an upper layer produced under the same conditions as the mono-layer PZT. XRD revealed small amounts of pyrochlore phase in the mono-layer PZT, but only the perovskite phase was detected in the bi-layer PZT. SEM and AFM revealed the upper part of the bi-layer PZT to be more compact and smooth. Moreover, the bi-layered PZT showed superior symmetry polarization and a significantly reduced leakage current of less than 1×10-5 A/cm². This phenomenon observed in bi-layer PZT was attributed to the induction of growth into a pure perovskite phase by suppressing the formation of a pyrochlore phase in the upper PZT layer where the densely formed lower PZT layer was produced sequentially.

• Journal of Industrial Technology
• /
• v.20 no.A
• /
• pp.29-36
• /
• 2000

The shape of the polymers in the mixed alkoxide solutions of Si(OC2H5)4 and Zr(n-OC3H7)4 with various water contents (1, 2, 4, and 8 in molar ratio to alkoxide, r) and catalysts was examined by rheological measurements, and its relation with fiber drawing behavior of the solutions was described. It was found that fibers could be drawn in the viscosity range 1~100 P from the acid-catalyzed solutions with lower water contents of the molar ratio H2O/alkoxide, $r{\leq}2$. On the other hand, no fiber could be drawn from the acid-catalyzed solutions including a large amount of water($r{\geq}4$) and the base-catalyzed solutions. The relation between the intrinsic viscosity [${\eta}$] and number average molecular weight ${\bar{M}}n$, namely $[{\eta}]=K{\bar{M}}n{\alpha}$, has shown that the acid-catalyzed spinnable solution (r = 1 and 2) had linear polymers where the exponent a's were about 0.56 and 0.81, whereas non-spinnable solutions (r = 4 and 8) had three dimensional network polymers or spherical particles where the exponent a's were 0.41-0.51 and 0.35.