• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.504-508
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• 2018

Diopside is a ceramic material with excellent physical and chemical properties. However, when it is applied as an LED packaging material, heat dissipation of the LED element is not sufficient due to its relatively lower thermal conductivity, which may cause degradation of the LED function. In this study, glass-ceramics based on a $ZrO_2-CaO-MgO-SiO_2$ system, in which diopside is the main crystal phase, were prepared by heat-treating the glass, which was composed of zircon ($ZrO_2-SiO_2$) powders and diopside ($CaO-MgO-2SiO_2$) powders. The possibility of using the glass-ceramics as a packaging material for LEDs was then investigated by analyzing the density, shrinkage, thermal conductivity, and phases generated according to the amount of zircon powder added. The density and shrinkage of specimens decreased slightly and then increased again with the amount of $ZrO_2-SiO_2$ added within a range of 0~0.38 mol. Even though the crystal phase of zircon does not appear in the $ZrO_2-CaO-MgO-SiO_2$ system, the glass containing 0.38 mol zircon powder showed the highest thermal conductivity, 1.85 W/mK, among the specimens fabricated in this study: this value was about 23% higher than that of pure diopside. It was found that the thermal conductivity of the glass-ceramics based on a $ZrO_2-CaO-MgO-SiO_2$ system was closely related to the density, but not to the phase type. Zirconia ($ZrO_2$), a component oxide of zircon, plays an important role in increasing the density of the specimen. Furthermore the thermal conductivity of glass-ceramics based on a $ZrO_2-CaO-MgO-SiO_2$ system showed a nearly linear relationship with thermal diffusivity.

• Journal of the Korean Ceramic Society
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• v.23 no.4
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• pp.23-26
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• 1986

The synthetic conditions of $ ZrSiO_4-Cd(S_xS_{1-x})$ stains from CdS, Se, $SiO_2$ , 4ZrO_2$ and Lif were investigated and the colors were examined. Colors of the stains prepared were yellow orange red pink ruby and violet in relation to both the content of CdS-Se in $ZrSiO_4$ and firing temperature. Colors of these series stains were thermally stabilized probably by the structural stability of zirconium silicate. Furthermore by the result of X-ray diffraction analysis it is assumed that color of the zircon cadmium sulphoselenide $ ZrSiO_4-Cd(S_xS_{1-x})$ stain is developed by neither the coloring ions in $ZrSiO_4$ lattice nor the solid solution of $ZrSiO_4$ and $Cd(S_xS_{1-x})$ but by the small crystals of $Cd(S_xS_{1-x})$ being occluded by the zirconium silicate during sintering process.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.377-385
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• 2002

The possibility of $ZrO_2$ thin film as insulator for Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure was investgated. $SrBi_2Ta_2O_9$ and $SrBi_2Ta_2O_9$(SBT) thin films were deposited on P-type Si(111) wafer by R. F. magnetron sputtering method. The electrical properties of MFIS gate were relatively improved by inserting the $ZrO_2$ buffer layer. The window memory increased from 0.5 to 2.2V in the applied gate voltage range of 3-9V when the thickness of SBT film increased from 160 to 220nm with 20nm thick $ZrO_2$. The maximum value of window memory is 2.2V in Pt/SBT(160nm)/$ZrO_2$(20nm)/Si structure with the optimum thickness of $ZrO_2$. These memory windows are sufficient for practical application of NDRO-FRAM operating at low voltage.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.853-855
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• 1998

The electrical resistivity and mechanical properties of the hot-pressed and annealed ${\beta}$-SiC+39vol.%$ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_{3}$(6:4wt%). In this microstructures. no reactions were observed between $\beta$-SiC and $ZrB_2$, and the relative density is over 97.6% of the theoretical density. Phase analysis of composites by XRD revealed mostly of a $\alpha$-SiC(6H, 4H), $ZrB_2$ and weakly $\beta$-SiC(15R) phase. The fracture toughness decreased with increased $Al_{2}O_{3}+Y_{2}O_{3}$ contents and showed the highest for composite added with 4wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives. The electrical resistivity increased with increased $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation according to amount of liquid forming additives $Al_{2}O_{3}+Y_{2}O_{3}$. The electrical resistivity of composites is all positive temperature coefficient resistance(PTCR) against temperature up to $700^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.439-444
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• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.709-715
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• 1996

The influence of an electric field on the combustion synthesis of ${Ti}_{5}{Si}_{3}$-x ${ZrO}_{2)$(0 $\leq$ x $\leq$0.6)was investigated. Composite of X $\geq$0.45 can only be synthesized in the presence of an electric field. Although in the absence of an electri field the system with x = 0.45 and x=0.6 can sustain a nonsteady combustion wave, the reaction is not complete. That is, an unstable wave propagates to the middle of the sample and them becomes extinguished. Wave velocity o the ${Ti}_{5}{Si}_{3}-{ZrO}_{2}$ Composites slightly increases with the imposition of external field across the sample.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1230-1231
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of 8${\sim}$20[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.01[%], 81.58[Mpa], 31.437[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites. In this paper, it is convinced that ${\beta}$-SiC based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Journal of the Korean Ceramic Society
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• v.44 no.4 s.299
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• pp.219-223
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• 2007

The ionic conductivity of $Li_2O-ZrO_2-SiO_2$ glasses has been designed and analyzed on the basis of a mixture design experiment with constraints. Fitted models for the activation energy and the ionic conductivity are as follows: $Q(kJ/moi)=54.8565x_1+144.825x_2+133.846x_3-170.908x_1x_3-334.338x_2x_3$ $log{\sigma}(300K)=-5.00245x_1-1.17876x_2-15.5173x_3+17.4522x_1x_3$. The electrical properties are very sensitive to the ratio of $Li_2O/SiO_2$. The effect of $ZrO_2$ is less than that of this ratio but $ZrO_2$ component attributes to the reduction of the activation energy. The optimal composition for best ionic conduction based on these fitted models is $55Li_2O{\cdot}10ZrO_2{\cdot}35SiO_2$. Its activation energy and ionic conductivity at 300 K are 46.98 kJ/mol and $1.08{\times}10^{-5}{\Omega}^{-1}{\cdot}cm^{-1}$, respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.52-61
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• 2003

$SrBi_2Ta_2O_9(SBT)$and$ZrO_2$thin films for MFIS structure(Metal-Ferroelectric-Insulator-Semiconductor) were deposited by RF magnetron sputtering method. In order to investigate the effect of heat treatment of insulator layers and MFIS structure, the insulator layers were heat treated from $550^{circ}C;to; 850^{\circ}C$in conventional furnace or RTA furnace under$O_2$and Ar ambient, respectively. After then, C-V characteristics and leakage current were measured. The capacitor with 20 nm thick $ZrO_2$layer treated at RTA$750^{circ}C;in;O_2$ atmosphere had the largest memory window. The C-V and leakage current characteristics of the$Pt/SBT(260nm)/ZrO_2(20nm)/Si$structure were better than those of$Pt/SBT(260nm)/Si$ structure. These results showed that$ZrO_2$films took a role of buffer layer effectively.

• Journal of Mechanical Science and Technology
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• v.14 no.8
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• pp.830-835
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• 2000

The thermodynamical estimation of the interfacial reaction and the impact properties of $Nb/MoSi_2$ laminate composites containing SiC, $NbSi_2$ or $ZrO_2$ particles are investigated. Laminate composites, which comprise alternating layers of $MoSi_2$ with the particle and Nb foil, were fabricated by the hot press process. It is clearly found out that the interfacial reaction of $Nb/MoSi_2$ can be controlled by the addition of $ZrO_2$ particle to the $MoSi_2$ phase. The addition of $ZrO_2$ particle increases both the impact value and the sintered density of Nb/McSij, The suppression of the interfacial reaction is caused by the formation of $ZrSiO_2$ in $MoSi_2-ZrO_2$ matrix mixture.