• Korean Chemical Engineering Research
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• 제52권4호
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• pp.443-450
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• 2014

지르코니아를 고정한 실리카($ZrO_2-SiO_2$)와 망가니즈 산화물($MnO_x$)에 백금을 담지하여 제조한 촉매에서 수소에 의한 일산화질소의 선택적 촉매 환원($H_2$-SCR) 반응을 조사하였다. $Pt-MnO_x$ 촉매에서는 NO 전환율이 낮으며, $N_2O$와 $NO_2$ 생성이 억제되었다. 반면, $Pt/ZrO_2-SiO_2$ 촉매에서는 NO 전환율이 높지만, $100{\sim}150^{\circ}C$에서는 $N_2O$가, $200{\sim}300^{\circ}C$에서는 온도가 높아지면 $NO_2$ 수율이 높아져, $N_2$ 수율이 낮았다. $ZrO_2-SiO_2$에 $MnO_x$와 백금을 같이 담지한 $Pt-MnO_x/ZrO_2-SiO_2$촉매에서는 $100{\sim}150^{\circ}C$에서 이들 성분의 상승작용으로 $N_2$ 수율이 조금 높아졌다. 이들 촉매에서 표면 조성, 산화 상태, 산성도를 조사하고, NO가 흡착되어 수소와 반응하는 과정의 IR 스펙트럼을 그렸다. NO의 $H_2$-SCR 반응에서 전환율과 생성물 수율을 촉매 구성 성분의 촉매작용과 연계지어 고찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.186-189
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• 2003

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $ZrO_2$ and $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the $ZrO_2$ and $CeO_2$ layer. AES show no interdiffusion and the formation of amorphous $SiO_2$ layer is suppressed by using the $ZrO_2$ and $CeO_2$ film as buffer layer between the BLT film and Si substrate. The width of the memory window in the C-V curves for the $BLT/ZrO_2/Si$ and $BLT/CeO_2/Si$ structure is 2.94 V and 1.3V, respectively. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• 한국세라믹학회지
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• 제37권4호
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• pp.359-367
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• 2000

Particulate composites of Al2O3/SiC, Al2O3/ZrO2 and Al2O3/ZrO2/SiC have been fabricated to investigate their R-curve behaviors and toughening mechanisms. Al2O3 containing 30 vol% SiC particles of 3${\mu}{\textrm}{m}$ showed rising R-curve behavior owing to the strong crack bridging by SiC particles. The fracture toughness reached 9.1 MPa {{{{ SQRT {m} }} at the crack length of 1000${\mu}{\textrm}{m}$. On the other hand, ZrO2-toughened Al2O3 had a high flat R-curve since it rose steeply in the short crack region due to the well known transformation toughening. For Al2O3/ZrO2/SiC composites, the R-curve behavior was similar to that of Al2O3/SiC but with slightly higher toughness. The SiC particles in this composite decreased the amount of transformable tetragonal phase to reduce the effect of transformation toughening by 50%. It was also found that the fracture toughness of this composite with two different toughening mechanisms was markedly lower than that estimated by the simple addition of two contributions.

• 산업기술연구
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• 제20권A호
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• pp.247-256
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• 2000

Precursor gels with the composition of $xZrO_2{\cdot}(100-x)SiO_2$ systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence on tetragonal to monoclinic transformation of $ZrO_2$ was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal $ZrO_2$ occurred through 3-dimensional diffusion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about $310{\sim}325{\pm}10kJ/mol$. The growth of $t-ZrO_2$, in proportion to the cube of radius, increased with increasing heating temperature and heat-treatment time. It was suggested that the diffusion of Zr4+ions by Ostwald ripening was rate-limiting process for the growth of $t-ZrO_2$ crystallite size. The fracture toughness of $xZrO_2{\cdot}(100-x)SiO_2$ systems glass ceramics increased with increasing crystallite size of $t-ZrO_2$. The fracture toughness of $30ZrO_2{\cdot}70SiO_2$ system glass ceramics heated at $1,100^{\circ}C$ for 5 h was $4.84Mpam^{1/2}$ at a critical crystaliite size of 40 nm.

• 한국재료학회지
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• 제13권9호
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• pp.572-580
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• 2003

Synthesizing behavior and microstructural evolution of $CaZrO_3$and $m-ZrO_2$in a thermal reaction process of $ZrSiO_4$-$xCaCO_3$mixtures, where x is 7 and 19, were investigated to determine the addition amount of CaO in CaO:$ZrO_2$:$SiO_2$ternary composition. CaZrO$_3$-Ca$_2$SiO$_4$precursor prepared by the mixture of $ZrSiO_4$and CaCO$_3$in aqueous suspending media was controlled to the acidic (pH=4.0) condition with HCI solution to enhance the thermal reaction. The addition amount of dispersant into the $ZrSiO_4$-$xCaCO_3$slip increased with increasing mole ratio of $CaCO_3$, which was associated with the viscosity of slip. Decarbonation reaction was activated with an increase of the addition amount of $CaCO_3$, showing different final temperatures in $ZrSiO_4$-$7CaCO_3$and $ZrSiO_4$-$19CaCO_3$mixtures as about 980 and 116$0^{\circ}C$, respectively, for finishing decarbonation reaction. The grain morphology was changed to spherical shape for all samples with an increase of sintering temperature. The grain size and phase composition of the synthesized composites depended on the mixture ratio of Zrsi04 and CacO3 powders, indicating that the main crystals were m-ZrO2 ($\leq$3 $\mu\textrm{m}$) and $CaZrO_3$ ($\leq$ 7 $\mu\textrm{m}$) in $ZrSiO_4$$>-7CaCO_3$and $ZrSiO_4$-$19CaCO_3$mixtures, respectively.

• 한국세라믹학회지
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• 제18권3호
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• pp.187-191
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• 1981

The effect of additions, $TiO_2$ and $ZrO_2$ as nucleant on the base glass which composition was determined to 0.97 $Li_2O-Al_2O_3-SiO_2$ has been investigated by means of D.T.A., X-ray diffraction and dilatation. $TiO_2$ and $ZrO_2$ as nucleant were added 0.06mole, in which ratios of $TiO_2$/$ZrO_2$ were varied 1/0, 2/1, 1/1, 1/2 and 0/1. The crystalline phases were appeared to $\beta$-spodumene as principal, $\beta$-eucryptite and $ZrO_2$ as secondary, regardless of nucleant variations. The crystallinity of the crystallized glass added $TiO_2$, $ZrO_2$ mixture as nucleant was higher than that of the glass added $TiO_2$ or $ZrO_2$ only. The crystallinity of the glass added $TiO_2$/$ZrO_2$ =1/1 was highest. Increasing the addition of $ZrO_2$, it has been observed that the crystal growing temperature became higher.

• 한국세라믹학회지
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• 제34권7호
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• pp.774-780
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• 1997

Porous low reflective coating films of SiO2.ZrO2 system were prepared from the mixed alkoxide solutions of Zr(O-nC3H7)4 and partially prehydrolyzed TEOS by the sol-gel method using the dip-coating technique. In the case of 90SiO2.10ZrO2 porous coating films with HCl and H2O content was 0.3 mole and 4 mole, 378 m2/g of the specific surface area, 0.254 cm3/g of total pore volume, 30-50$\AA$ of average pore diameter. The transmittance of 90SiO2.10ZrO2 porous coated films was 95.38% at the wavelength of 550 nm, compared with the parent glass, the transmittance was increased with 4.38%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.215.1-215.1
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• 2015

본 연구에서는 용액 공정 기반 ZrO2 절연막의 우수한 특성을 확인하기 위해 SiO2 절연막을 가지는 IGZO (Indium-Gallium-Zinc Oxide) 박막 트랜지스터와 비교했다. In:Ga:Zn=1:1:1의 비율의 0.3 M IGZO 용액과 0.2 M ZrO2용액을 사용하였다. ZrO2 박막 트랜지스터는 0.2M ZrO2 용액을 5번 반복 증착하며 140nm 두께의 ZrO2 절연막을 가지는 IGZO 박막 트랜지스터와 비교대상으로 동일한 두께의 SiO2의 절연막을 가지는 IGZO 박막 트랜지스터를 제작하였다. ZrO2 박막 트랜지스터의 문턱전압은 4.3V로 SiO2 박막 트랜지스터의 -6.1V보다 낮았고, 이동도는 $1.2356cm^2/V{\cdot}s$로 $0.0554cm^2/V{\cdot}s$ 보다 약 20배 높았다. 실험 결과를 통해 ZrO2를 절연막으로 사용한 박막 트랜지스터의 특성이 더 향상되었음을 확인하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.118-119
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• 2007

Phase stability and morphological investigation on the $Si/SiO_2/HfO_2$ and $Si/SiO_2/ZrO_2$ stack are presented. Thermal stability of $HfO_2$ and $ZrO_2$ determines the quality of interface and subsequently the performance of device. The stacks have been fabricated and annealed at $1000^{\circ}C$ for various time. In evolution of crystalline phase and morphology (electrical and geometrical) of high-k materials, annealing time and process are observed to be crucial factors. The crystallization of some phase has been observed in the case of $Si/SiO_2/HfO_2$. The chemical environment around Zr and Hf in respective samples is observed to be different.

• Korean Chemical Engineering Research
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• 제57권5호
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• pp.714-722
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• 2019

산 염기성질이 다양하게 존재하는 담체($SiO_2-Y_2O_3$, $Al_2O_3$, $SiO_2-ZrO_2$, $SiO_2$, $TiO_2$, MgO) 상에 17 wt% Ni을 고정한 상태에서 함침법을 사용하여 촉매를 제조하여 수소 존재 하에 에탄올과 암모니아의 환원성 아민화 반응에 대한 촉매활성을 비교 평가하였다. 반응 전후에 있어 사용된 촉매는 X-선 회절, 질소 흡착, 에탄올-승온탈착(EtOH-TPD), 이소프로판올-승온탈착(IPA-TPD), 수소 화학흡착을 사용하여 특성분석을 수행하였다. pH 9.5 이상에서 침전법을 사용하여 $ZrO_2$와 $Y_2O_3$ 담체 제조 시 파이렉스 반응기에서 미량의 Si 용융으로 인해 $SiO_2-ZrO_2$와 $SiO_2-Y_2O_3$ 복합 산화물이 각각 생성되었다. 사용된 촉매 중에서 $Ni/SiO_2-Y_2O_3$ 촉매가 가장 좋은 활성을 보였으며 이는 높은 니켈 분산도와 EtOH-TPD와 IPA-TPD에서의 낮은 탈착온도 등과 밀접한 관련이 있었다. Ni/MgO 촉매상에서의 낮은 촉매 활성은 NiO-MgO 고형물 형성에 기인한 것으로 보이며, $Ni/TiO_2$ 경우에서는 담체-금속 간의 강한 상호 작용으로 인해 낮은 니켈 금속 상 존재로 인해 반응성이 낮게 나왔다. $TiO_2$와 MgO 이외의 담체를 사용한 경우에 있어서 유사한 에탄올 전환율에서의 에틸아민류와 아세토니트릴 선택도는 큰 차이를 보이지 않았다.