• 한국세라믹학회지
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• 제22권5호
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• pp.76-84
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• 1985

Mechanical property enhancing mechanisms of $Al_2O_3-ZrO_2$ two phase ceramic composites were studied for several compositions of different $ZrO_2$/$Al_2O_3$ ratio. Microstructural analysis of $Al_2O_3-ZrO_3$(pure) composites indicated that pre-existing microcrack due to larger $ZrO_2$ particle at grain boundary extended along alumina grain boundaries within process zone. Microcracks also nucleated when very small $ZrO_2$ particles at the grain boundaries transformed to monoclinic phase at near of main crack tip. These types of microcracks could contribute to the toughening achieved by creating additional crack surface area during crack propagation. Microstructural analyses also showed that the average grain size and abnormal grain size of $Al_2O_3$ were decreased with increasing $ZrO_2$ vol% in $Al_2O_3$ matrix. As a result it could be concluded as follows In TEX>$Al_2O_3-ZrO_3$(pure) system 1. Microcrack nucleation (stress-induced microcracking) and extension was effective mechanism for absorpiton of fracture energy 2, More narrow distribution and smaller grain size of $Al_2O_3$ due to $ZrO_2$particles mainly contributed to main-tatin the strength and hardness.

• 한국세라믹학회지
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• 제34권1호
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• pp.102-108
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• 1997

수용성 ZrOCl2.8H2O, YCl3.6H2O 및 Ce(NO3)3.6H2O를 사용하여 공침법으로 다양한 조성의 Y2O3-CeO2-ZrO2 분말을 합성하고, 이들의 압분체를 1400, 150$0^{\circ}C$에서 2시간동안 공기 중에서 상압소결하였다. 2mol%Y2O3-ZrO2 조성의 140$0^{\circ}C$ 소결체는 강도(1003MPa)와 미세경도(12.6GPa) 면에서 제일 우수하였으나, 인성은 10mol%CeO2-ZrO2의 경우가 13.3MPa.m1/2로 제일 높았다. CeO2-ZrO2에Y2O3의 첨가는 소결체의 평균 결정입자의 크기를 감소시켰고, 이로 인하여 강도와 경도는 증가하지만 인성은 감소하였다. 반면에 Y2O3-ZrO3에 CeO2의 첨가는 수열분위기에서 장시간 저온시효동안 정방정상의 안정화를 향상시키는 효과를 나타내었다.

• 멤브레인
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• 제16권4호
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• pp.303-312
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• 2006

상변환과 졸-겔 반응을 동시에 행하는 새로운 제막법으로 나노크기의 $ZrO_2$ 입자가 함유된 비대칭형 PES-$ZrO_2$ 복합 막을 제조하였다. PES-$ZrO_2$ 복합 막 제조의 최적 제막 조건을 복합 막에의 인 흡착실험을 수행하여 인 흡착량이 최대가 되는 조건으로서 결정하였는바, 최적 제막 조건은 캐스팅 용액에 1 mL의 PES 당 0.15 mL의 $Zr(PrO)_4$ 첨가 및 비용매 1 L에 1 mL $Zr(PrO)_4$ 당 30 mL의 $HNO_3$ 촉매를 첨가했을 때 이었다. 복합 막의 단면 구조, 막성능 및 $ZrO_2$ 입자 함유량 변화를 SEM, 순수투과량, TGA, ICP, XRD 및 접촉각 측정을 통해 결정하였는바, 캐스팅 용액에의 $Zr(PrO)_4$ 첨가량이 증가할수록 순수 투과량이 증가하며, $ZrO_2$ 입자 함유량은 1 mL의 PES 당 0.15 mL의 $Zr(PrO)_4$ 첨가했을 때 최대가 되었다. 복합 막의 표면 특성을 친수성으로 개선하기 위하여 인산처리를 하였으며, 인산처리 전후(前後)의 두 종류 PES-$ZrO_2$ 복합 막을 대상으로 한 BSA 용액의 dead-end 한외여과 실험을 수행하여 막오염 형성의 억제 정도를 평가한 결과 인산처리 시킨 복합 막의 경우 투과량과 BSA 배제도 모두 약 40% 정도 증가하였는데 이는 복합 막을 인산처리 시킴으로서 막특성이 친수화 되었기 때문이다.

• 한국재료학회지
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• 제8권1호
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• pp.3-9
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• 1998

40$0^{\circ}C$ H$_{2}$O, D$_{2}$O및 $O_{2}$분위기에서 Zr-2.5Nb합금의 부식거동을 분석하였다. Martensitic $\alpha$'-Zr상이나 $\alpha$-Zr과 $\beta$-Zr상의 Zr-2.5Nb합금인 경우, 부식분위기에 매우 민감하여, $O_{2}$속에서 가장 큰 부식속도를 보였다. 반면, $\alpha$-Zr나 $\beta$-Zr상의 경우, 부식 매질에 따른 별다른 차이없이 높은 부식저항성을 보였다. 이러한 Zr-2.5Nb 합금의 미세조직 및 부식 매질에 따른 부식거동변화는 Zr-2.5Nb 합금의 음극 지배 부식반응의 관점으로 해석되었으며, 이들 결과를 이용하여 CANDU 형및 RBMK 형 Zr-2.5Nb 압력관의 가동조건 차이를 설명할 수 있었다. Zr-2.5Nb 합금의 모든 조직에서 주로 단사정 ZrO$_{2}$산화물이 형성되었으며, 산화물내 정방정 ZrO$_{2}$비율은 산화물 두께가 증가함에 따라 감소하였다.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.439-444
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• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• Bulletin of the Korean Chemical Society
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• 제29권6호
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• pp.1217-1223
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• 2008

A series of Zr,S co-doped $TiO_2$ were synthesized by a modified sol-gel method and characterized by various spectroscopic and analytical techniques. The presence of sulfur caused a red-shift in the absorption band of $TiO_2$. Co-doping of sulfur and zirconium (Zr-$TiO_2$-S) improves the surface properties such as surface area, pore volume, and pore diameter and also enhances the thermal stability of the anatase phase. The Zr-$TiO_2$-S systems are very effective visible-light active catalysts for the degradation of toluene. All reactions follow pseudo firstorder kinetics with the decomposition rate reaching as high as 77% within 4 h. The catalytic activity decreases in the following order: Zr-$TiO_2$-S >$TiO_2$-S >Zr-$TiO_2$>$TiO_2$$\approx$ P-25, demonstrating the synergic effect of codoping with zirconium and sulfur. When the comparison is made within the series of Zr-$TiO_2$-S, the catalytic performance is found to be a function of Zr-contents as follows: 3 wt % Zr-TiO2-S >0.5 wt % Zr-$TiO_2$-S> 5 wt % Zr-$TiO_2$-S >1 wt % Zr-$TiO_2$-S. Higher calcination temperature decreases the reactivity of Zr-$TiO_2$-S.

• 한국재료학회지
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• 제24권5호
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• pp.259-265
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• 2014

$ZrO_2$ films were coated on aluminum etching foil by the sol-gel method to apply $ZrO_2$ as a dielectric material in an aluminum(Al) electrolytic capacitor. $ZrO_2$ films annealed above $450^{\circ}C$ appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The $ZrO_2$ films annealed at $500^{\circ}C$ exhibited a dielectric constant of 33 at 1 kHz. Also, uniform $ZrO_2$ tunnels formed in Al etch-pits $1{\mu}m$ in diameter. However, $ZrO_2$ film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, $ZrO_2$-coated Al etching foils were anodized at 300 V. After being anodized, the $Al_2O_3$ film grew in the directions of both the Al-metal matrix and the $ZrO_2$ film, and the $ZrO_2$-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the $ZrO_2$-coated Al foil exhibited only a small increase because the thickness of the $Al_2O_3$ film was 4-5 times thicker than that of $ZrO_2$ film.

• 소성∙가공
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• 제7권5호
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• pp.481-488
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• 1998

The active metal brazing was applied to bond Alumina and Ni-Cr steel by Ag-Cu-Zr-Sn alloy and the interfacial microstructure and reaction mechanism were investigated. Polycrystalline monoclinic $ZrO_2$ with a very fine grain of 100-150 nm formed at the alumina grain boundary contacted with Zr segregation layer at the interface. The $ZrO_2$ layer containing the inclusions and cracks were developed at the boundary of inclusion/$ZrO_2$ due to the difference in specific volume. The development of $ZrO_2$ at the interface was successfully explained by the preferential penetration of $ZrO_2$ at the interface was successfully explained by the preferential penetration of Zr atoms a higher concentration of oxygen and a high diffusion rate of Al ions into molten brazing alloy.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2005년도 수소연료전지공동심포지움 2005논문집
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• pp.317-322
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• 2005

[ $Pt/CeO_2$ ] 촉매에 Zr을 첨가하여 우수한 저온 수성가스전화반응의 활성을 가진 촉매를 만들었다. $Pt/ZrO_2-CeO_2$ 촉매는 $Pt/ZrO_2$나 $Pt/CeO_2$ 촉매에 비해 Ce와 Zr의 상호작용에 의한 시너지 효과로 인해 CO chemisorption으로 측정한 Pt area가 증가하고 담체에 Pt가 잘 분산되었다. 또한, Zr이 첨가된 $Pt/CeO_2$는 Ce의 redox 능력을 향상시켜 support의 reducibility를 향상시켰다. 담체에 고르게 잘 분산되고 support의 산소저장능력과 reducibility가 향상된 $3\;wt\%\;Pt/ZrO_2-CeO_2$ 촉매들은 반응물에 수소와 이산화탄소의 첨가 유무와 상관없이 $3\;wt\%\;Pt/ZrO_2$나 $3\;wt\%\;Pt/CeO_2$ 촉매보다 우수한 활성을 보였다.

• 한국세라믹학회지
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• 제34권6호
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• pp.583-590
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• 1997

The effects of Mn2O3 and Y2O3 additives on the microstructure and dielectric properties of Sr(Zr, Ti)O3 have been investigated. Powders with Sr(Zr1-xTix)O3(0$\leq$x$\leq$0.1) composition were prepared by the conventional solid state processing from commercial TiO2 and precipitation-processed ZrO2. The powders containing sintering additives of Mn2O3 and Y2O3 were compacted and then sintered at 1,55$0^{\circ}C$ for 4 h to get>97% relative density. Mn2O3 suppressed the grain growth and Y2O3 enhanced the density of sintered body. The oxidation state of Mn ions were determined by a chemical wet method and EPR spectroscopy. Mn ions were present as Mn2+ and Mn4+ in SrZrO3, while as Mn3+ and Mn4+ in Ti-substituted Sr(Zr, Ti)O3. With the substitution of Ti, the lattice parameters of SrZrO3 decreased and its dielectric constant increased with remarkable decrease in Q value. The dielectric constant of Sr(Zr, Ti)O3 was in the range of 30 to 40, Q values 1,200~5,400 at 6 GHz and temperature coefficient of resonant frequency -67~100 ppm/K.