• Applied Microscopy
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• 제29권4호
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• pp.471-477
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• 1999

Pyrochlore 구조를 갖는 $Lu_2Ti_2O_7$와 그와 유사한 구조를 갖는 화합물, $In_2(Ti_{1.7}Zn_{0.3})O_{6.7}$와 $In_2(Ti_{1.7}Mg_{0.3})O_{6.7}$에 대한 미세구조 관찰을 200kV에서 작동되는 HRTEM을 이용하여 관찰하였다. 두 화합물에서는 변조구조가 관찰되었으나 pyrochlore구조인 $Lu_2Ti_2O_7$에서는 관찰되지 않았다. 전자회절패턴 분석에서는 변조구조는 incommensurate이고 [220] 방향으로 sublattice의 2.69배로 그 주기가 0.953 nm인 초격자가 관찰되었다. 고분해능 격자상에서는 sublattice의 2배 또는 3배의 초격자들로 조합되며 평균적으로 2.7배로 그 주기가 0.967 nm가 되는 초격자상이 관찰되었다. 두 화합물의 결정구조는 입방정 pyrochlore 구조와 아주 유사하나 입방정 축은 $90^{\circ}$에서 약간 벗어난 구조를 갖는다. 변조구조는 전자빔에 의하여 점차적으로 변조구조가 없는 구조로 비가역적으로 변환된다.

• 대한전자공학회논문지
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• 제26권8호
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• pp.1211-1216
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• 1989

To enhance the breakdown properties of low voltage-oriented ZnO varistor, sample were fabricated with additive oxides and sintering conditions. Addition of TiO2 lowered breakdown voltage` nonlinear resistances were lowered about 10V/mm and nonlinear exponents were not lowered with respect to it with the basic composition. To the samples added TiO2, V2ko5, and Cr2O3, microstructures were observed by SEM, moreover Ti was detected at grainboundaries and within the grain by EDS. Addition of Si-oxides and Sb2O3 increased nonlinear exponent and also increased nonlinear resistance, by addition of TiO2 to these samples at the sintering conditions of 1250\ulcorner and 1 hour we could fabricate low voltage-oriented ZnO varistors with nonlinear exponent of 30 or more and with real breakdown voltage of 30V/mm.

• 대한환경공학회지
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• 제36권6호
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• pp.396-401
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• 2014

나노물질은 다양한 분야에 널리 사용되고 있다. 본 연구에서는 Lactuca(상추)와 Raphanus(알타리무) 씨앗의 발아와 발아지수에 금속산화물 나노입자(CuO, NiO, $Fe_2O_3$, $Co_3O_4$, $TiO_2$, ZnO)가 미치는 영향을 조사하였다. 용액상 노출에서 CuO가 가장 큰 영향을 나타내었으며, 발아와 발아지수의 $EC_{50}$는 각 0.46 mg/L와 0.37%로 조사되었다. 씨앗 이용 식물독성 측정에서 상추가 알타리무보다 나노입자 노출에 대해 더욱 민감한 반응을 나타내었다. 일반적으로 나노입자의 씨앗발아와 발아지수에 근거한 영향은 다음의 순서로 조사되었다: CuO > ZnO >NiO > $TiO_2$, $Fe_2O_3$, $Co_3O_4$. 특히 $TiO_2$, $Fe_2O_3$와 $Co_3O_4$는 최대 노출 농도 1,000 mg/L 농도에서도 뚜렷한 영향을 나타내지 않았다.

• Bulletin of the Korean Chemical Society
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• 제33권10호
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• pp.3213-3217
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• 2012

Reactive adsorption desulfurization (RADS) experiments were conducted over a series of commercial metal oxide supports ($Al_2O_{3-}$, $SiO_{2-}$, $TiO_{2-}$ and $ZrO_{2-}$) supported Ni/ZnO adsorbents. The adsorbents were characterized by X-ray diffraction (XRD), temperature programmed reduction (TPR), and Fourier transform infrared spectroscopy (FTIR) in order to find out the influence of specific types of surface chemistry and structural characteristics on the sulfur adsorptive capacity. The desulfurization performance of all the studied adsorbents decreased in the following order: Ni/ZnO-$TiO_2$ > Ni/ZnO-$ZrO_2$ > Ni/ZnO-$SiO_2$ > Ni/ZnO-$Al_2O_3$. Ni/ZnO-$TiO_2$ shows the best performance and the three hour sulfur capacity can achieve 12.34 mg S/g adsorbent with a WHSV of $4h^{-1}$. Various characterization techniques suggest that weak interaction between active component and support component, high dispersion of NiO and ZnO, high reducibility and large total Lewis acidity of the adsorbents are important factors in achieving better RADS performance.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.214-220
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• 1998

ZnO varistors are characterized by the features of excellent nonlinearity and surge withstand capability. In this paper, in order to investigate the use of ZnO varistor as surge absorption device in low voltage, metal oxide material($TiO_2$) was selected as control material of grain growth. Samples of ZnO varistors were fabricated with varying the contents, and then the microstructures and V-I characteristics were measured. It was observed by SEM that the mean grain size increased with the increase of the additive. From the measurement of V-I characteristics, it was observed that according to the increase of the quantity of $TiO_2$ as additive, the operating voltage was lowered.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.677-680
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• 2003

The effect of $B_2O_3$ addition on the sintering behavior and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ ceramic system were investigated. Highly dense samples were obtained at the sintering temperatures below $900^{\circ}C$. Temperature coefficient of resonance frequency(${\tau}_f$) changes to a positive value with increasing the amount of $B_2O_3$ because of the increased amount of rutile phase. The $Q{\times}f_o$ values were determined by the microstructures and sintering shrinkages which are affected by the rutile or second phase. When 6.19 mol.% of $B_2O_3$ added and sintered at $900^{\circ}C$ for 5h, it exhibits ${\epsilon}_r$ =23.5, $Q{\times}f_o$= 67,500 GHz, and ${\tau}f=-1.42ppm/^{\circ}C$.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.239-246
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• 1997

The ZnO is stabilize dielectric constant over a broad temperature range because its addition makes the relaxation time short. In this study, the composite oxide material (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ was mixed by ZnO additive material and the dielectric polarization characteristics was studied. The relative density was over 90[%] at all specimen in the structural characteristics. Among of the specimen, the relative density of (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ with ZnO (0.4mol) has a 95[%]. The grain size of composite oxide material with an increasing ZnO increased and it was 1.0[.mu.m]-1.22[.mu.m]. In the electrical characteristics, the charge and discharge current was increased by ZnO addition. The dielectric relaxation time was increased by space charge polarization at above 110[.deg. C] and the dielectric relaxation time was fixed by space charge polarization of para-dielectric layer at below 110[.deg. C]. The dielectric relaxation time was maximum when the grain size was small. The dielectric relaxation time is decreased with an additive material ZnO and interface polarization, existing void at the grain and grain boundary. The remnant polarization is increased and the coercive electric field is decreased by ZnO.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.138-139
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• 1994

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.28.1-28.1
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• 2000

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.160.2-160
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• 2002