• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1439-1442
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• 1997

We investigated the electrical and CO sensing properties of ZnO-$TiO_2$ composite ceramics. The electrical conductivities and relative dielectric constants of $TiO_2$ added ZnO increased with increasing $TiO_2$ content in air. The calculated dielectric constants of 3mol%, 5mol%, and 7mol% $TiO_2$ added ZnO were 7, 13, and 120, respectively. The measured CO sensivities were $1{\sim}6.42$ in the temperature range from $100^{\circ}C$ to $400^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.370-370
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• 2011

ZnO 나노 라드 위에 Quantum dot을 형성하고 최종적으로 TiO2를 Atomic Layer Deposition방법으로 증착하여, 그 passivation 효과가 solar cell의 효율에 미친 영향에 대한 실험을 진행하였다. 암모니아 솔루션을 이용한 Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 TCO 기판 위에 성장시킨다. 여기에 잘 알려진 SILAR와 CBD 방법으로 CdS, CdSe 양자점을 증착한다. 그리고 amorphous TiO2로 표면을 덮는 과정을 거치는데, TiO2가 좁은 간격으로 형성된 ZnO라드 구조 위에서 균일하고 정밀하게 증착되도록 하기 위해 Atomic Layer Deposition을 이용하였다. 사용된 precursor는 Titanium isopropoxide와 H2O이며, 실험상에서 0~5 nm 두께의 TiO2 박막을 형성해 보았다. 다양한 분석 방법을 통해 TiO2/QDs/ZnO의 shell-shell-core 구조를 조사했다. (Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS)). 이를 solar cell에 적용하고 I-V curve를 통해 그 효율을 확인하였으며, Electrochemical Impedance Spectroscopy (EIS)를 통해서 재결합 측면에서 나타나는 변화 양상을 확인하였다.

• Applied Microscopy
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• v.29 no.1
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• pp.95-103
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• 1999

Microstructural observations on the pseudo-brookite $MgTi_2O_5$ and the similar type of $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$ were carried out using a top-entry HRTEM working at 200 kV. The modulated structures were found in $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$, however, not in $MgTi_2O_5$. The electron diffraction patterns of sublattice in $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$ are quite similar to those of pseudo-brookite $MgTi_2O_5$. but the complicated superlattice reflections are present in the diffraction patterns. Four types of modulations have been found. The periodicities for the modulated structure are found to be 3.63 nm, 0.79 nm and 0.64 nm along [220] direction, and 0.81 nm along [420] direction. The phase transition from the modulated structure to the unmodulated one was also observed in situ due to the electron beam irradiation reversibly. Further damage by the electron beam made the crystal to be fragmented into many small crystals with the formation of the voids at the kinks in ledged structure of the surface. The anisotropic arrangements of In and O atoms in $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$ might cause the compound to be unstable under the electron beam.

• Proceedings of the KAIS Fall Conference
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• 2003.06a
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• pp.87-90
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• 2003

B₂O₃침가에 따른 (Zn/sub 0.8.Mg/sub 0.2/)TiO₃계 세라믹스의 마이크로파 유전특성에 대하여 연구하였다. B₂O₃의 침가량에 비례하여 B₂O₃와 (Zn/sub 0.8.Mg/sub 0.2/)TiO₃와외 반응에 의한 TiO₂ 석출물의 양이 증가하며 공진주파수 온도계수가 증가하였다. 소결온도에 따라 액상의 양, 미세조직, TiO₂와 2차상의 석출거동이 상이하게 나타났다. 6.19mo1.％ B₂O₃물 첨가한 시편을 900℃에서 5시간 소결시 ε/sub r/ = 23.5, Q×f/sub o/ = 67,500 ㎓, T/sub f/ = -1.42 ppm/℃의 우수한 마이크로파 유전특성을 얻을 수 있었다.

• Journal of Powder Materials
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• v.11 no.2
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• pp.143-148
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• 2004

In the present study, $TiO_2$ imbedded composite powders have been successfully prepared from the (Cu. Zn)/$TiO_2$ composite salt solution. The composite (Cu, Zn)/$TiO_2$ powders were formed by drying the solution at 200~$600^{\circ}C$ in the hydrogen atmosphere. Photocatalytic characteristics was evaluated by detecting the decomposition ratio of aniline blue with UV-visible spectrophotometer(Shimazu Co., UV-1601). Phase analysis of (Cu, Zn)/$TiO_2$ composite powders was carried out by XRD and DSC, and powder size was measured with TEM. The mean particle size of composite powders was about 100mm. As the reduction temperature increases, a few zinc sulfide and oxide phases was formed and copper oxide phase was reduced. The decomposition ratio of aniline blue was about 80％ under the UV irradiation by the TiO$_2$ phase in the composite (Cu, Zn)/$TiO_2$ powders and similar decomposition ratio of 80％ was obtained at the UV lightless condition by virtue of Cu and Zn compounds.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1108-1114
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• 1999

Microstructure and electrical properties of ZnO-doped (0-5 mol%) 0.05 Pb(Mn1/3Sb2/3)O3-0.95 PZT ceramics were investigated. Sintering temperature was decreased to 100$0^{\circ}C$ due to eutetic reaction between PbO and ZnO. Grain-size increased up to adding 1mol% ZnO and then decreased. Compositions of grain and grain-boundary were investigated by WDS. Lattice parameter was decreased with ZnO addition. Density increased with ZnO addition and reached to the maximum of 7.84(g/cm2) at 2 mol% ZnO. The effect of ZnO on electrical properties of PMS-PZT was investigated. At 3mol% ZnO addition electromechanical coupling factor(kp) was about 50% and relative dielectric constant($\varepsilon$33/$\varepsilon$0) was 997 Mechanical quality factor(Qm) decreased with ZnO addition. Lattice parameters and tetragonality(c/a) were measured to investigate relationship between the electric properties and substitution of Zn2+. At 3 mol% ZnO tetragonality was maximiged at c/a=1.0035 Curie temperature (Tc) decreased slightly with ZnO addition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.605-608
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• 2002

In order to improve the microwave dielectric properties of ZnO+$TiO_2$ ceramic systems, we studied the relations among microstructures, phases, and microwave dielectric properties at various mole ratio and sintering temperatures. The optimum composition was found to be 0.2ZnO+0.8$TiO_2$ when sintered at $1100^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 22,500 GHz, ${\varepsilon}_r$ = 73, and $\tau_f=+210ppm/^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.359-362
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• 1988

In this papers, in order to decreased the ZnO varistor breakdown voltage, additives the $TiO_2$ with ZnO varistors. The effects of addition $TiO_2$ with ZnO varistor are discussed. Observation of ZnO varistor microstructures are photospectroscopy and SEM, and variation of phase are XRD analysis. Experimental results, the more increased the $TiO_2$ contents the more decreased the mean grain size of ZnO. Also, results of XRD analysis, the more increased the $TiO_2$ contents the more increased the spinel structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.561-565
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• 2002

The effects of sintering additives such as $Bi_2O_3$ and $V_2O_5$ on the microwave dielectric and sintering properties of (Zn, Mg)$TiO_3$ system were investigated. Highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature range of $870{\sim}900^{\circ}C$ with $Bi_2O_3$ and $V_2O_5$ additions of <1wt.%, respectively. The microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ with 0.45 wt.% $Bi_2O_3$ and 0.55 wt.% $V_2O_5$ sintered at $900^{\circ}C$ were as follows: $Q{\times}f_o$=56,800 GHz, ${\varepsilon}_r$=22, and ${\tau}_f=-53ppm/^{\circ}C$. In order to improve temperature coefficient of resonant frequency, $TiO_2$ was added to the above system. The optimum amount of $TiO_2$ was 15 mol.% when sintered at $870^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 32,800 GHz, ${\varepsilon}_r$ = 26, and $\tau_f=0ppm/^{\circ}C$.