• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.837-840
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• 2014

Novel materials of $Zn(HPB)_2$ and Ir-complexes were respectively synthesized as blue or red emitting material. White Organic Light Emitting Diodes (OLED) were fabricated by using $Zn(HPB)_2$ for a blue emitting layer, Ir-complexes for a red emitting layer and $Alq_3$ for a green emitting layer. White OLED was fabricated by using double emitting layers of $Zn(HPB)_2$ and $Alq_3:Ir$-complexes, and hole blocking layer of BCP. We also varied the thickness of BCP. When the thickness of BCP layer was 5 nm, white emission was achieved. We obtained a maximum luminance of $3,500cd/m^2$. The CIE coordinates was (0.375, 0.331). From this study, we could propose that the hybrid structure is efficient in lighting application of white OLED by improvement of color purity.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1890-1892
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• 2005

Recently, high luminance and high efficiency were realized in OLEDs with multilayer structure including emitting materials such as metal-chelate complexes. New luminescent materials, [2- (2-hydroxyphenyl)-quinoline] (Zn(HPB)q), [(1,10-phenanthroline)- (8-hydroxyquinoline)] Zn(Phen)q was synthesized. Zn-Complexes have low molecular compound and thermal stability. The ionization potential(IP) and electron affinity(EA) of Zn-complexes were measured by cyclic-voltammetry(CV). The fundamental structure of the OLEDs was $ITO/{\alpha}$-NPD/Zn-Complex/Al and then we made device structure rightly in energy band gap. We using Zn(Phen)q as emitting layer and Zn(HPB)q as electron transport layer. We measured current density-voltage, luminance-voltage characteristics.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1373-1374
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• 2007

We has been synthesized $(POB)_{2}Ir(pic)$ as a red emitting materials and evaluated in the organic light emitting diodes (OLED). The layer of $Alq_3$ doped with $(POB)_{2}Ir(pic)$ as emitters has been demonstrated. The structure of the device is ITO/ NPB (40 nm) / $Zn(HPB)_2$ (40 nm)/ $Alq_3$ : $(POB)_{2}Ir(pic)$ (30 nm) / LiF / Al. We varied the doped rate of $(POB)_{2}Ir(pic)$. The doped rate is 0.4 %, 0.6%, 0.8 and 1.2%, respectively. When the doped rate of the $Alq_3$:$ Ir(POB)_{2}(pic)$ was 0.6%, white emission is achieved. The Commission Internationale de l'Eclairage (CIE) coordinates of the white emission are (0.316, 0.331) at an applied voltage of 10.75V.