• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.291-294
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• 2014

In this study, a chemiresistive sensor based on one-dimensional $WO_3$ nanostructures is presented for application in non-invasive medical diagnostics. $WO_3$ nanostructures were used as an active gas sensing layer and were deposited onto a $SiO_2/Si$substrate using Pt interdigitated electrodes (IDEs). The IDE spacing was $5{\mu}m$ and deposition was performed using RF sputter with glancing angle deposition mode. Pt IDEs fabricated by photolithography and dry etching. In comparison with thin film sensor, sensing performance of nanostructure sensor showed an enhanced response of more than 20 times when exposed to 50 ppm acetone at $400^{\circ}C$. Such a remarkable faster response can pave the way for a new generation of exhaled breath analyzers based on chemiresistive sensors which are less expensive, more reliable, and less complicated to be manufactured. Moreover, presented sensor technology has the potential of being used as a personalized medical diagnostics tool in the near future.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.11a
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• pp.41-41
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.117.1-117
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• 1998

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• Bulletin of the Korean Chemical Society
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• v.26 no.10
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• pp.1515-1519
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• 2005

Tungsten oxide-modified TiO2 thin films were formed on a glass substrate by sol-gel and dip coating processes using acetyl acetone as a chelating agent. The hydrophilic properties of the thin films were investigated with illumination of UV light. The dependence of water contact angle on material composition and morphology of the film is established with SEM image and AFM profile. The surface morphology was controlled with the change of precursor concentration. 0.01 M of tungsten oxide-modified Ti$O_2$ have shown the highest hydrophilicity after UV-irradiation. The effect of composition on photoinduced hydrophilicity of the W$O_3$-Ti$O_2$ films was also investigated. The films were characterized by XRD, SEM, AFM and XPS.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.65-65
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• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.141-147
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• 1999

The electrochromic characteristics of tungsten oxide films are largely affected by deposition conditions, such as substrate temperature and gas flow rate and also post-annealing. We have considered gas flow rate and temperature as important factors having an effect on an electrical, optical phenomenon and structural variation of $WO_3$ . The tungsten oxide films were deposited onto ITO(20$\Omega\box$, 1000$\AA$) using rf magnetron sputtering method. In particular, the films deposited at room temperature were annealed at various temperatures in air. All specimens had crystal structure except one being deposited at room temperature with nearly amorphous-like structure. The specimen deposited at $100^{\circ}C$ had a structure in which the increase in deposition temperature. The specimen deposited at $100^{\circ}C$ had a structure in which the cations$(Li^+)$ are easily movable because of void boundaries induced by regularly arrayed large grains. The specimen deposited at $300^{\circ}C$ had a dense structure with small grains but it exhibited the large mobility and charge density in $WO_3$ because of distinct grain boundaries.

• Solar Energy
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• v.15 no.3
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• pp.141-149
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• 1995

The tungsten oxide thin films were prepared on $s_i$ wafer by using an electron-beam evaporation technique. Thickness and structure of tungsten oxide film degraded in various electrolytes were analyzed by Rutherford backscattering spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and scanning electron microscope. Thickness of $WO_3$ film was the most dissolved in 1M $H_2SO_4$ electrolytye. We have confirmed that the degradation of this films was accelerated by $H_2O$ in electrolytes. But the electronic structure of film degraded by electrolyte contained of glycerol was not changed as comparision with as-deposited film. The degradation may be attributed to a change of thickness and the surface morphology of the film.

• Journal of IKEEE
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• v.23 no.4
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• pp.1128-1133
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• 2019

This paper proposed colored front panel glass for Building Integrated Photovoltaic (BIPV) systems using multi-layered thin films composed of transition metal oxide (TMO) layers. Molybdenum oxide (MoO₃) and tungsten oxide (WO₃) provided complementary and suitable materials in making effective interference of reflected light from interfaces with significant difference in refractive indices. A simple, fast, and cheap fabrication method was achieved by depositing the multi-layer films in a single thermal evaporator. Magenta colored glass with optical transmittance of more than 90% was achieved with MoO₃ (60nm)/WO₃(100nm) multi-layered film. This technology could play in a critical role in commercial BIPV system applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.128-128
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• 2003

Electrochromism (EC) is defined as a phenomenon in which a change in color takes place in the presence of an applied voltage. Because of their low power consumption, high coloration efficiency, EC devices have a variety of potential applications in smart windows, mirror, and optical switching devices. An EC devices generally consist of a transparent conducting layer, electrochromic cathodic and anodic coloring materials and an ion conducting electrolyte. EC has been widely studied in transition metal oxides(e.g., WO$_3$, NiO, V$_2$O$\sub$5/) Among these materials, WO$_3$ is a most interesting material for cathodic coloration materials due to its lush coloration efficiency (CE), large dynamic range, cyclic reversibility, and low cost material. WO$_3$ films have been prepared by a variety of methods including vacuum evaporation, chemical vapor deposition, electrodeposition process, sol-gel synthesis, sputtering, and laser ablation. Sol-gel process is widely used for oxide film at low temperature in atmosphere and requires lower capital investment to deposit large area coating compared to vacuum deposition process.