• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.171-171
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• 2003

공정기술의 향상으로 DRAM(dynamic random acess memory)의 고집적화가 이루어지고 있으며, 각 개별소자 및 셀 영역의 점유면적의 감소가 요구되어지고 있다. 따라서 기존에 사용하던 NO (Si$_3$N$_4$/SiO$_2$)박막보다 유전율이 높은 고유전물질에 대한 연구가 진행되고 있다. Ta$_2$O$_{5}$, $Y_2$O$_3$, HfO$_2$, ZrO$_2$,Nb$_2$O$_{5}$, BaTiO$_3$, SrTiO$_3$ 및 (BaSr)TiO등이 고유전물질로 연구되고 있는데 그 중 공정의 안정성, 누설전류의 우수성으로 인해 Ta$_2$O$_{5}$이 많이 연구되고 있다. 본 실험에서는 TiO$_2$가 8 mol%가 첨가된 Ta$_2$O$_{5}$의 열처리 온도에 따른 전기적, 유전특성을 살펴보려고 한다살펴보려고 한다

• KSCE Journal of Civil and Environmental Engineering Research
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• v.42 no.2
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• pp.163-170
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• 2022

The present study investigates NO_x-removal and sound-absorption performances of photocatalytic porous concrete prepared by various TiO₂ application methods. Photocatalytic porous concrete samples were prepared by one of the following: 1) mechanically mixing TiO₂ during casting; 2) mixing bottom ash aggregate pretreated with TiO₂ during casting; and 3) spraying TiO₂ solution to the normally fabricated porous concrete. The test results indicated that the mechanical mixing of TiO₂ decreased the compressive strength as the added TiO₂ content increased. The use of pretreated bottom ash aggregate reduced the porosity, yet the compressive strength of the concrete was similar to that measured from the former method. Porous concrete samples sprayed with the TiO₂ solution exhibited enhanced compressive strength, while the porosity was analogous to those measured from other methods. The NO_x-removal performance was the highest in the samples sprayed with the TiO₂ solution, followed by the samples using pretreated bottom ash aggregate and mechanically mixed TiO₂. The samples with mechanically mixed TiO₂ identified a relationship between soundabsorption performance and porosity. However, no particular tendency was observable in the samples with other TiO₂ application methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.282-285
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• 1999

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0,0.1) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from 130$0^{\circ}C$ to 1$600^{\circ}C$, second phase was decreased and grain size was increased. In the case of 0.9 MgTiO$_3$-0.1SrTiO$_3$ ceramics sintered at 130$0^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 22.61, 10,928(at 1GHz), +50.26ppm/$^{\circ}C$ , respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.186.1-189
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• 2001

Ferroelectric $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (BLT)thin films with various compositions(x=0.65, 0.70, 0.75) were prepared on Pt//Ti/SiO$_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BLT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atomosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70) thin film capacitors with a Pt top electrode showed better ferroelectric properties than other films. At the applied voltage of 5V, the dielectric constant($\varepsilon$$_{r}$), dissipation factor(tan$\delta$),remanent polarization(2Pr), and coercive field(2Ec) of the $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70)thin films were about 272.54, 0.059, 32.4 $\mu$C/cm$^2$, 2Ec=119.9kV/cm. Also the capacitor did not show any significant fatigue up to 4.8$\times$10$^{10}$ read/write switching cycles.hing cycles.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.861-864
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• 2002

Ferroelectric $Bi_{4-x}Nd_xTi_3O_{12}$(BNdT) thin films with the composition(x=0.75) were prepared on pt/Ti/$SiO_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BNdT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atmosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}Nd_xTi_3O_{12}$(X=0.75) thin film capacitors with a Pt top electrode showed better ferroelectric properties. At the applied voltage of 5V, the dielectric constant$(\varepsilon_r)$, dissipation factor$(tan{\delta})$, remanent polarization(2Pr) and nonvolatile swiching charge of the $Bi_{4-x}Nd_xTi_3O_{12}$(x=0.75)thin films were about 346.7, 0.095, $56{\mu}C/cm^2$ and $38{\mu}C/cm^2$ respectively. Also the capacitor did not show any significant fatigue up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1MHz.

• Korean Journal of Materials Research
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• v.32 no.5
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• pp.264-269
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• 2022

Ti₃C₂T_x MXene, which is a representative of the two-dimensional MXene family, is attracting considerable attention due to its remarkable physicochemical and mechanical properties. Despite its strengths, however, it is known to be vulnerable to oxidation. Many researchers have investigated the oxidation behaviors of the material, but most researches were conducted at high temperatures above 500 ℃ in an oxidation-retarding environment. In this research, we studied changes in the structural and electrical properties of Ti₃C₂T_x MXene induced by low-temperature heat treatments in ambient conditions. It was found that a number of TiO₂ particles were formed on the MXene surface when it was mildly heated to 200 ℃. Heating the material to higher temperatures, up to 400 ℃, the phase transformation of Ti₃C₂T_x MXene to TiO₂ was accelerated, resulting in a TiO₂/Ti₃C₂T_x hybrid. Consequently, the metallic nature of pure Ti₃C₂T_x MXene was transformed to semiconductive behavior upon heat-treating at ≥ 200 ℃. The results of this research clearly demonstrate that Ti₃C₂T_x MXene may be easily oxidized even at low temperatures once it is exposed to air.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.11-13
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• 2006

[ $M\"{o}ssbauer$ ] spectra of $Ti_{1-x-y}Co_xFe_yO_2(0.01{\leq}x,\;y{\leq}0.05)$ prepared with $^{57}Fe$ enriched iron have been taken at various temperatures ranging from 80 to 300K. The Mossbauer spectrum of $Ti0.94Co_{0.03}Fe_{0.03}O_2$ consists of a ferromagnetic (six-Lorentzian), a paramagnetic phase (doublet) and armorphous phase over all temperature ranges. Isomer shifts indicate $Fe^{3+}$ for the ferromagnetic phase and the paramagneic phase of $Ti_{1-x-y}Co_xFe_yO_2$ samples. It is noted that the magnetic hyperfine field of ferromagnetic phase had the value about 1.5 times as large as that of u-fe. The XRB data for $Ti_{1-x-y}Co_xFe_yO_2$ showed mainly rutile phase with tetragonal structures without any segregation of Co and Fe into particulates within the instrumental resolution limit. The magnetic moment per (Co+Fe) atom in $Ti0.94Co_{0.03}Fe_{0.03}O_2$, under the applied field of 1T was estimated to be about $0.332{\mu}_B$ which is ten times as large as that of $Ti0.97Co_{0.03}Fe_{0.03}O_2,\;0.024{\mu}_B$ per Co atom, suggesting a high spin configuration of Co and fe ions.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.19-24
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• 2011

we successfully synthesized $TiO_2$-Ag composite nanowires via an electrospinning method and investigated the relationship between their electrochemical properties and structures by means of field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and cycler. It is shown that the $TiO_2$-Ag composite nanowires exhibit superior electrochemical properties when compared to the single $TiO_2$ nanowires and $TiO_2$ nanoparticles (P25, Degussa). Therefore, the results indicate that the introduction of Ag nanophases within the electrospun $TiO_2$ nanowires could be improved the capacitance and cycleability of electrodes in Li-ion batteries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.256-259
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• 1996

$(Sr_{1-x}{\cdot}Ca_x)TiO_3+yNb_2O_5$($0.05{\leq}x{\leq}0.2$, 0.004$1350[^{\circ}C]$ in a reducing atmosphere($N_2$ gas). Dielectric propertries were investigated with contents of $Nb_2O_5$. The grain size and dielectric constant increase with increase $Nb_2O_5$, but decrease in $Nb_2O_5$ exceed($Nb_2O_5=0.6[mol%]$). Also, the temperature characteristics of the dielectric loss factor exhibited a stable value within 0.5[%]. The capacitance characteristics appeals a stab]e value in ${\pm}10[%]$.