• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.123-126
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• 2001

The $0.98MgTiO_3-0.02BaTiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and EDS. According to the X-ray diffraction patterns of the $0.98MgTiO_3-0.02BaTiO_3$ ceramics, the hexagonal $BaMg_6Ti_6O_{19}$ and ilmenite $MgTiO_3$ structures were coexisted. The dielectric constant$({\varepsilin}_r)$ and quality factor$(Q{\times}f_r)$ were decreased with increasing the sintering temperature in the range of $1275^{\circ}C{\sim}1350^{\circ}C$. In the case of the $0.98MgTiO_3-0.02BaTiO_3$ ceramics sintered at $1275^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.27, 76,845, $-46.6ppm/^{\circ}C$, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.756-760
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• 2007

The $(1-x)Mg_4Ta_2O_9-xwt%TiO_2\;(x=5\sim20)$ microwave dielectric ceramics were prepared by solid-state reaction method and sintered at $1450^{\circ}C$. According to the X-ray diffraction data, the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics had main phase of $Mg_4Ta_2O_9$ and $MgTi_2O_5$ peaks were added by increasing of $TiO_2$ addition. Microwave dielectric properties of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics were influenced by $MgTi_2O_5$ phase and properties of $TiO_2$. There was a little decrement of the quality factor from 116,800GHz of pure $Mg_4Ta_2O_9$ to 100,100GHz of 15wt% $TiO_2$ added one. But there was excellent improvement in temperature coefficient of the resonant frequency (TCRF) by addition of 15wt% $TiO_2$. The dielectric constant quality factor and TCRF of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics sintered at $1450^{\circ}C$ were $13.08\sim16.41,\;45,000\sim165,410GHz,\;-24.82\sim+3.88ppm/^{\circ}C$, respectively, depending on the value of x. Simulated dielectric resonator (DR) with $Mg_4Ta_2O_9-15wt%TiO_2$ ceramics had the operating frequency of 11.97GHz and $S_{2,1}$ of -35.034dB.

• Journal of Magnetics
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• v.16 no.2
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• pp.101-103
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• 2011

Solid solutions between $BaTiO_3$ and $LaFeO_3$ have been prepared through a solid state reaction method. The X-ray diffraction results reveal that $Ba_{1-x}La_xTi_{1-x}Fe_xO_3$ ($0.1\;{\leq}\;x\;{\leq}\;0.7$) compounds have a cubic structure, whereas the parent material $BaTiO_3$ has a tetragonal structure. The magnetization measurements indicate that the materials have a magnetic ordering at room temperature and the magnetic properties of the solid solutions depending on the doping amount of $LaFeO_3$. The origin of magnetic behaviors is believed to be from $Fe^{3+}$ ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.260-261
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• 2005

The heterolayered thick/thin structure consisting of $Pb(Zr_{0.52}Ti_{0.48})O_3$ and $BaTiO_3(BT)$ were fabricated by a sol-gel process. PZT powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen printing techniques on alumina substrate with Pt electrodes. The microstructural and dielectric characteristics of the stacked heterolayered PZT/BT/PZT films were investigated by varying the number of coating $BaTiO_3$ layers. The existence of a $BaTiO_3$ layer between the PZT thick films of the tri-layer $Pb(Zr_xTi_{1-x})O_3/BaTiO_3/Pb(Zr_xTi_{1-x})O_3$thick/thin/thick film can greatly improve the leakage current properties of the PZT thick films. The average thickness of a PZT(5248)/$BaTiO_3$ heterolayered thick/thin film was 25$\mu$m. The relative dielectric constant and dielectric loss of the PZT(5248)/$BaTiO_3$-3 heterolayered thin film coated three times were 1087 and 1.00% at 1[MHz].

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.95-99
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• 2011

$(1-x)BaTiO_3+(x)Cd_5(PO_4)_3Cl$ ceramics were prepared by the conventional ceramic technique, i.e., solid state reaction at high temperature. The concentration of $Cd_5(PO_4)_3C$ was varied from 0.01 to 0.15 mole fraction. In order to study the phase transitions of our ceramics, the Raman scattering spectra were measured as functions of concentration x and temperature. It was found that the soluble limit of $Cd_5(PO_4)_3Cl$ in $BaTiO_3$ was the x=0.05 composition and $BaTiO_3$ phase disappeared above x=0.10. A new phase identified as $Ba_4Ti_3P_2O_{15}$ was detected in all samples of our compositions. The Curie temperature shifts up to $130^{\circ}C$ as the concentration x increases from zero to 0.05 and shift down to $95^{\circ}C$ as further increases to 0.08. For the increase of the Curie temperature, it is suggested that it can result from the inhibition of displacement of $Ti^{4+}$ in the distorted octahedron due to well dispersed $Ba_4Ti_3P_2O_{15}$ and $Cd_5(PO_4)_3Cl$ phase.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.871-871
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• 1997

(1-x)CaTiO/sub 3/-xLa(Zn/sub 1/2/Ti/sub 1/2/)O/sub 3/의 마이크로 유전특성을 조사하였다. x가 증가함에 따라 비유전율과 공진주파수의 온도계수는 감소하였으며, Qㆍf/sub 0/는 증가하였다. 그 결과 x=0.5인 (Ca/sub 0.5/La/sub 0.5/)(Ti/sub 0.75/Zn/sub 0.25/)O/sub 3/의 조성에서 ε/sub r/=51, Qㆍf/sub 0/=38,000 (at 7 GHz), τ/sub f/=+5ppm/℃의 유전특성이 나타났다. (Ca/sub 0.5/La/sub 0.5/)(Ti/sub 0.75/Zn/sub 0.25/) O/sub 3/조성의 소결온도를 저하시키기 위하여 Bi/sub 2/O/sub 3/를 주조성으로한 소결체를 첨가하여 소결 및 유전특성을 조사하였다. 1wt% 0.76Bi/sub 2/O/sub 3/-0.24NiO가 첨가된 경우 소결온도는 150℃ 낮아졌으며, 비유전율 (ε/sub r/), 공진주파수의 온도계수(τ/sub f), Qㆍf/sub 0/가 각각 50+5ppm/℃, 35,000인 마이크로파 유전특성이 얻어졌다. 또한 3wt%의 0.76Bi/sub 2/O/sub 3/-0.24NiO가 첨가된 경우 소결온도는 200℃ 저하되었고, 비유전율 (ε/sub r/)과 공진주파수의 온도계수 (τ/sub f)는 변하기 않았으나, Qㆍf/sub 0/값이 38,000에서 25,000으로 저하되었다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.8
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• pp.376-381
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• 2001

The(1-x) MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics were fabricated by the conventional mixed oxide method. The structural and microwave dielectric properties were investigated by XRD, SEM, EDS and network analyzer. The sintering temperature and time were 1275$^{\circ}C$~135$0^{\circ}C$ and 2hours, respectively. In the XRD results of 0.96MgTiO$_3$-0.04SrTiO$_3$ceramics, the perovskite structure of SrTiO$_3$and ilmenite structure of MgTiO$_3$phase were coexisted. The dielectric constant($\varepsilon$(sub)${\gamma}$) and temperature coefficient of resonant frequency($\tau$(sub)f) were increased with addition of SrTiO$_3$. In thie case of 0.96MgTiO$_3$-0.04SrTiO$_3$ ceramics sintered at 13$25^{\circ}C$, the dielectric constant, quality factor(Q) and temperature coefficient of resonant frequency($\tau$(sub)f) were 20.13, 7956(at 7.27GHz), and +1.76ppm/$^{\circ}C$, respectively.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.473-475
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• 2000

The (1-x)$MgTiO_3-xSrTiO_3$$(x=0.03{\sim}0.04)$ ceramics were fabricated by conventional mixed oxide method. The structural properties and microwave dielectric properties were investigated by XRD, SEM and HP8757D network analyzer. In the $0.96MgTiO_3-0.04SrTiO_3$ ceramics, the perovskite structure $SrTiO_3$ and ilmenite structure $MgTiO_3$ phases were coexisted. The dielectric constant(${\varepsilon}_r$ and temperature coefficient of resonant frequency(${\tau}_f$) was increased with addition of $SrTiO_3$. In the case of $0.96MgTiO_3-0.04SrTiO_3$ ceramics sintered at $1325^{\circ}C$, the dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.13, 7956(at 7.27GHz), +1.7568ppm/$^{\circ}C$, respectively.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.674-681
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• 1997

Ternary compound ceramics, (1-y-x) BaTiO$_3$-y SrTiO$_3$-x MgTiO$_3$(0.00 x 0.20), were fabricated by the conventional ceramic process. The structural and dielectric properties of specimens were investigated while varying the composition and sintering temperature(1,200~1,45$0^{\circ}C$) in order to obtain the optimum condition of capacitor. As is well known, Curie temperature(T$_{c}$) of high dielectric-based ceramic(BaTiO$_3$) was shifted and temperature of capacitance was decreased in according to increase of solid solution with (Sr, Mg)TiO$_3$. As a result, a suitable condition of compound rate for capacitor was obtained such as the BSM-11(0.8BaTiO$_3$-0.1SrTiO$_3$-0.1MgTiO$_3$), and sintering temperature was sintered at 1,25$0^{\circ}C$ for two hours. In this case, dielectric constant<1,300, dielectric loss(tan$\delta$)<0.03, and the variation rate of capacitance had less than 3% in the range -10~7$0^{\circ}C$.>.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.109-112
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• 2005

Electronic and magnetic properties of $Ti_{1-x}M_xO_{2-\delta}$ (M=Co and Fe) thin films grown by sol-gel method have been investigated. Anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films were successfully grown on $Al_2O_3$ (0001) substrates and exhibited p-type electrical conductivity while the undoped films n-type conductivity. Room temperature vibrating sample magnetometry measurements on the anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films with same x ($=4.8 at.{\%}$) showed quite similar magnetic hysteresis curves with the saturation magnetic moment of $\~4 {\mu}_B$ per Co ion despite their differences in structural and electronic properties. Such giant magnetic moment is attributable to the unquenched orbital moment of the $Co^{2+}$ ions substituting the octahedral $Ti^{4+}$ sites. Similar ferromagnetic behavior was observed for $Ti_{1-x}Fe_xO_{2-\delta}$ films that are highly resistive compared to the Co doped samples. Saturation magnetic moment was found to decrease for higher x, i.e., $\~2$ and $\~1.5 {\mu}_B$ per Fe ion for x=2.4 and 5.8 at. $\%$, respectively. Conversion electron $M\ddot{o}ssbauer$ spectroscopy measurements predicted the coexistence of $Fe^{2+}$ and $Fe^{3+}$ ions at the octahedral sites of $Ti_{1-x}Fe_xO_{2-\delta}$.