• Environmental Engineering Research
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• 제10권5호
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• pp.239-246
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• 2005

The effect of Pt addition over $V_2O_5-WO_3/TiO_2$ catalyst supported on PRO-66 was investigated for NO reduction in order to develop the catalytic filter working at low temperature. Catalytic filters, $Pt-V_2O_5-WO_3/TiO_2/PRD$, were prepared by co-impregnation of Pt, V, and W precursors on $TiO_2$-coated ceramic filter named PRD (PRD-66). Titania was coated onto the pore surface of the ceramic filter using a vacuum aided-dip coating method. The Pt-loaded catalytic filter shifted the optimum working temperature from $260-320^{\circ}C$(for the catalytic filter without Pt addition) to $190-240^{\circ}C$, reducing 700 ppm NO to achieve the $N_x$ slip concentration($N_x\;=\;NO+N_2O+NO_2+NH_3$) less than 20 ppm at the face velocity of 2 cm/s. $Pt-V_2O_5-WO_3/TiO_2$ supported on PRD showed the similar catalytic activity for NO reduction with that supported on SiC filter as reported in a previous study, which implies the ceramic filter itself has no considerable interaction for the catalytic activity.

• 한국광물학회지
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• 제14권1호
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• pp.73-84
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• 2001

티타늄과 산소의 함량이 서로 다른 4가지의 합성 페롭스카이트형(perovskite-type) 광물(($K_2$$La_2$$Ti_{n}$/$O_{2n+4}$, n=3, 4, 5, 6; 14/mcm, 14/mmm, I42 m)을 대상으로 리트벨트(Rietveld)구조분석법을 실시하여 결정구조를 밝히고 티타늄함량에 따른 층상형 구조를 연구하였다. 4가지 합성시료에 대하여 구조분석을 실시한결과 대표적인 페롭스카이트형 광물인 토소나이트(taustonite, $La_{1-x}$ //$K_{x}$ /$TiO_3$, x<0.4)가 주성분으로 나타났으며 토스나이트내에 12개의 산소를 배위하는 A자리 양이온은 자리점유율에 의해 $La^{3+}$ 와 $K^{+}$ /의 치환관계를 보여준다 공간군은 14/mcm, 단위포는 a=5.505(1)~5.510(1)$\AA$, c=7.793(1)~7.796(1)$\AA$ V=236.25~236.66 $\AA^3$ 범위의 값을 갖는다. 구조의 정밀도를 나타내는 R지수를 살펴보면 $R_{B}$ 값은 5.31~9.10 S(GofF)값은 0.86~1.24로 각각 계산되었다. 12배위를 하는 A자리 양이온인 란탄과 산소의 평균거리는 2.755$\AA$이고 6배위를 하는 B자리 양이온인 티타늄과 산소의 평균거리는 1.948 $\AA$의 결과를 얻었다. 합성된페롭스카이트형 광물의 층상구조가 알려져 있지 않아 시뮬레이션을 통해 구조모델을 결정하였으며 그결과 n=3인 R-38시료에서만 두 종류의 층상 페롭스카이트($La_2$$K_2$$Ti_3$$O_{10}$ ) 구조 (A-type: 14/mmm, a=3.8178 $\AA$, c=29.9189 $\AA$, V=436.04 $\AA^3$, B-type: 142 m, a =3.8376 $\AA$, c=28.023 $\AA$, V=412.6 $\AA^3$)가 존재함을 확인하였으나 다른 시료에서는 토소나이트, 금홍석 외에 새로운 합성광물로 제파이트의 존재를 확인하였다.

• Applied Microscopy
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• 제24권4호
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• pp.132-144
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• 1994

The application of TEM in investigating the evolution of microstructure during solid phase crystallization of the amorphous Si, $Si_{1-x}Ge_x,\;and\;Si_{1-x}Ge_x/Si$ films deposited on $SiO_2$ substrate, in identifying the failure mechanism of the TiN barrier layer in the Cu-metallization scheme, and in comparing the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films are discussed. First, it is identified that the evolution of microstructure in Si and $Si_{1-x}Ge_x$ alloy films strongly depends on the concentration of Ge in the film. Second, the failure mechanism of the TiN diffusion barrier in the Cu-metallization is the migration of the Cu into the Si substrate, which results in the formation of a dislocation along the Si {111} plane and precipitates (presumably $Cu_{3}Si$) around the dislocation. Finally, the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films is also quite different in these two cases. From these several cases, we demonstrate that the information which we obtained using TEM is critical in understanding the behavior of materials.

• Bulletin of the Korean Chemical Society
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• 제31권4호
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• pp.925-928
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• 2010

Nitrogen-doped $TiO_2$ ($TiO_2$:N) nano-particles with a pure anatase crystalline structure were successfully synthesized through the hydrolysis of $TiCl_4$ in an ammonia aqueous solution. The samples were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), $N_2$-sorption, and UV-vis diffuse reflectance spectra (UV-vis DRS) techniques. The absorption edge of nitrogen-doped $TiO_2$ shifted into the visible wavelength region. The photoelectrochemical (PEC) performances were investigated for the $TiO_2$ mesoporous electrodes doped with different nitrogen concentrations. The $TiO_2$:N electrodes exhibited much higher PEC responses compared to the pure $TiO_2$ electrode because of the significantly enhanced visible-photoresponsibility of the $TiO_2$:N electrodes.

• 한국세라믹학회지
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• 제45권11호
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• pp.651-657
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• 2008

In this study, CNT/$TiO_2$ composites were prepared using surface modified Multiwall carbon nanotube (MWCNT) and titanium n-butoxide (TNB) with benzene. The composites were characterized by nitrogen adsorption isotherms, scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), FT-IR spectra, and UV-vis absorption spectroscopy. The UV radiation induced photoactivity of the CNT/$TiO_2$ composites was tested using a fixed concentration of methylene blue (MB, $C_{16}H_{18}N_3S{\cdot}Cl{\cdot}3H_2O$) in an aqueous solution. Finally, it can be considered that the MB removal effect of the CNT/$TiO_2$ composites is not only due to the adsorption effect of MWCNT and photocatalytic degradation of $TiO_2$, but also to electron transfer between MWCNT and $TiO_2$.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.24-29
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• 2002

In this paper, the microstructure and the dielectric properties of Sr$\_$1-x/CaxTiO$_3$(0$\leq$x$\leq$0.2)-based grain boundary layer ceramics were investigated. The sintering temperature and time were 1420∼152 0$\^{C}$ and 4 hours in N$_2$ gas, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca, but the average grain size was increased with increase of sintering temperature. The second phase foamed by the thermal diffusion of CuO from the surface leads to verb high apparent dielectric constant, $\xi$$\_$r/>50000 and low dielectric loss, tan$\delta$<0.05. X-ray diffraction patterns of Sr$\_$1-x/CaxTiO$_3$ exhibited cubic structure, and the peaks shifted upward and the peak intensity were decreased with x. This is due to the lattice contraction as Sr is replaced by Ca with a smaller ionic radius. The specimens treated thermal diffusion for 2hrs in 1150$\^{C}$ exhibited nonlinear current-voltage characteristic, and its nonlinear coefficient(a) was overt 7.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.290-294
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• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.609-612
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• 1998

Pyroelectric properties of rhombohedral $Pb(ZrxTi_1-x)O_3ceramics$ with various Zr/Ti ratios of 84/16, 87/13, 90/10, and 93/7 are investigated using dynamic method. The response characteristics of PZT samples are examined by considering frequency dispersion. Since the reorientation of the grain does not the influence on the increase of frequency at low frequency (2~200Hz), the maximum pyroelectric response can be obtained with the change of spontaneous polarization. However, the pyroelectric response of PZT samples could be reduced as the spontaneous polarization decreases due to the restrain of the reorientation of the grain with the increasing of requency at high frequency (200~2000Hz). We have obtained the good pyroelectric response in the PZT sample having 84/16 Zr/Ti ratio, then the pyroelectric coefficient (${\gamma}$) and the figure of merit (FV) were $17.3nC/\textrm{cm}^2K$ and 2.28$\times$10-11Ccm/J, respectively. The noise equivalent power (NEP), the detectivity (D*) were 1.21$\times$10-7W/Hz$\frac{1}{2}$ and 8.26$\times$106cmHz$\frac{1}{2}$/W, respectively.

• ETRI Journal
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• 제13권4호
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• pp.58-69
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• 1991

고집적회로에서 A1 금속공정의 diffusion barrier로 널리 사용되는 titanium nitride의 성질을 조사하였다. 실제 회로 구조의 열적 안정성을 관찰하기 위하여 준비된 TiN/Ti다층 barrier를 $600^{\circ}C$까지 열처리하여 x-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy(XTEM) 등으로 분석하였다. 열처리 온도가 증가됨에 따라 oxygen은 TiN 층의 표면과 pure-Ti 층에 pile up 된다. TiN 층의 표면에서는 $600^{\circ}C$열처리시 TiN이 분해되어 완전히 $TiO_2$가 형성되며, TiN 층 내에서는 oxygen 함량은 열처리 온도의 증가에 따라 커지고 이때 형성되는 Ti-oxide는 $TiO_2$ 보다 TiO, $Ti_2$$O_3$ 상태로 존재하게 된다. Pure-Ti 층은 열처리시 두개의 층으로 나누어 지는 데, 표면에서 침투하는 oxygen과 pure-Ti이 반응하여 Ti-oxide 층이 생기며 실리콘 기판과의 반응으로 Ti-silicide를 형성한다. $600^{\circ}C$에서 모든 Ti 층이 반응으로 소모되고 열적 stress, Ti-silicide의 grain growth, oxygen의 침입으로 TiN 층에 blistering이 발생한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.318-322
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• 1997

The (Sr$_{l-x}$.Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100[$^{\circ}C$] for 2 hours and cooled to room temperature. The grain boundary was composed of the continuous insulating layers. The capacitance changes slowly and almost linearly in the temperature region of -30~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. The conduction mechanism of the specimens observed in the temperature range of 25~125[$^{\circ}C$], and is divined into three regions haying different mechanism as the current increased: the region I below 230[V/cm] shows the ohmic conduction. The region II can be explained by the Poole-Frenkel emission theory, and the region III is dominated by the tunneling effect.ect.