• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.295-295
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• 2012

The $TiO_2$ films were prepared in the $H_2SO_4$ solution containing $NH_4F$ at different anodic voltages, to compare the photocatalytic performances of titania for purification of waste water. The microstructure was characterized by a Field-emission scanning electron microscopy (FE-SEM) and X-ray diffractometry (XRD). Chemical bonding states and co-doped elements of F and N were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped $TiO_2$ films was analyzed by the degradation of aniline blue solution. From the result of diffuse reflectance absorption spectroscopy(DRS), it is indicated that the absorption edge of the F-N-codoped $TiO_2$ films shifted toward visible light area, and the photocatalytic reaction of $TiO_2$ was improved by doping an appropriate contents of F and N.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.294-296
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• 1999

Solid solution ceramics having various ratios between xPb( $Y_{1}$2/T $a_{1}$2/) $O_3$ and Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$were synthesized by a conventional solid state reaction for well sintered specimens, dielectric and piezoelectric prperties were studied as a function of composition. The dielectric constant of PYT-PZT ceramics of 4 mol% PYT was 1,424 at room temperature. The maximum value of electromechanical couping facotr $k_{p}$ of 51% $k_{t}$ of 30% were obtained at the composition of 4 mol% PYT, howerver mechanical quality factor( $Q_{m}$) had a minimum value of 69 at 4 mol% PYT. Also the maximum value of piezoelectric constant of $D_{33}$(310[pC/N]) and $d_{31}$(-131[pC/N]) were obtained at the composition of 4 mol% PYT content.ntent.t.t.t.

• 한국재료학회지
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• 제7권10호
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• pp.872-876
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• 1997

(1-x)CaTi $O_{3}$-xLa(Z $n_{1}$2/ $Ti_{1}$2/) $O_{3}$의 마이크로 유전특성을 조사하였다. x가 증가함에 따라 비유전율과 공진주파수의 온도계수는 감소하였으며, Qㆍ $f_{0}$는 증가하였다. 그 결과 x=0.5인 (C $a_{0.5}$L $a_{0.5}$)( $Ti_{0.75}$Z $n_{0.25}$) $O_{3}$의 조성에서 $\varepsilon$$_{r}$=51, Qㆍ $f_{0}$=38,000 (at 7 GHz), $\tau$$_{f}$=+5ppm/$^{\circ}C$의 유전특성이 나타났다. (C $a_{0.5}$L $a_{0.5}$)( $Ti_{0.75}$Z $n_{0.25}$) $O_{3}$조성의 소결온도를 저하시키기 위하여 B $i_{2}$ $O_{3}$를 주조성으로한 소결체를 첨가하여 소결 및 유전특성을 조사하였다. 1wt% 0.76B $i_{2}$ $O_{3}$-0.24NiO가 첨가된 경우 소결온도는 15$0^{\circ}C$ 낮아졌으며, 비유전율 ($\varepsilon$$_{r}$), 공진주파수의 온도계수($\tau$$_{f}$), Qㆍ $f_{0}$가 각각 50+5ppm/$^{\circ}C$, 35,000인 마이크로파 유전특성이 얻어졌다. 또한 3wt%의 0.76B $i_{2}$ $O_{3}$-0.24NiO가 첨가된 경우 소결온도는 20$0^{\circ}C$ 저하되었고, 비유전율 ($\varepsilon$$_{r}$)과 공진주파수의 온도계수 ($\tau$$_{f}$)는 변하기 않았으나, Qㆍ $f_{0}$값이 38,000에서 25,000으로 저하되었다. 25,000으로 저하되었다.되었다.되었다.되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.28.2-28.2
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• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권4호
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 전문대학교육위원 P
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• pp.31-34
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• 1999

In the present study, we fabricated stoichiometric $(Ba_{1-x}Sr_x)TiO_3$ thin films at various substrate temperature and contents using of magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/$SiO_2$/Si). The substate temperature deposited at 200[ $^{\circ}C$], 400[$^{\circ}C$] and 600[$^{\circ}C$] and crystalline BST thin films show above 400[$^{\circ}C$]. Also, the composition of $(Ba_{1-x}Sr_x)TiO_3$ thin films deposited on Si wafer substrate at 400[$^{\circ}C$] were closed to stoichiometry($1.015{\sim}1.093$ in A/B ratio), but compositional deviation from a stoichiometry is larger as $SrCO_3$ is added. The drastic decrease of dielectric constant and increase of dielectric loss in $(Ba_{1-x}Sr_x)TiO_3$thin films is observed above 100[kHz]. V-I characteristics of $(Ba_{1-x}Sr_x)TiO_3$ thin films show the decrease of leakage current with the increase of $SrCO_3$ contents.

• 한국표면공학회지
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• 제31권5호
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• pp.251-260
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• 1998

Stainless Steel is being used widely for various purposes due to its good corrosion resistance. There have been many researches to produce colored stainless steel by several methods such as anodizing and ion-plating. In this experiment, we $Ti_XN$(C,O) on the films SUS304, aluminium, and glass substrates with DC magentron sputterinng system made by Leybold Hereus, and strdied the structur, corrsion and pit characture of the TiXN observed by TeM image was black and whink and white columnar hed a very fine(200$\AA$) dense sturcture,and the diffraction resistance at the $3{\times}10_6A/\textrm{cm}^2$ and $10_{10}\times{cm}^2$current density were obtained in the under-stoichiometry $Ti_xN$ compound of Ar/$N_2$(Ar:$N_2$=100:6, titanium-rich compound) and the over-stoichiometry compound of Ar/$N_2$((Ar:$N_2$=60:15) respectively. When the thiness was over 1.64$\mu\textrm{m}$, good pit resistance could be obtained and its improvement was especially affected by perfect surfaceface. Typical TiN anodic polarzation curves of very unstable corrosion were observed by $Ti_xN$ film on the glass and perfect film of 3.28$\mu\textrm{m}$ thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.72-75
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• 2001

In this paper, the $Sr_{1-x}Ca_{x}TiO_{3}(0{\leq}x{\leq}0.2)$ 2)-based grain boundary layer ceramics were fabricated to measured dielectric properties and voltage-current properties. The sintering temperature and time were $1420\sim1520^{\circ}C$, 4hours, in $N_{2}$ gas, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The 2nd phase formed by thermal diffusion from the surface lead to a very high apparent dielectric constant, $\varepsilon_r$ > 50000. X-ray diffraction patterns exhibited cubic structure for all specimens. Increasing content of Ca, the peak intensity were decreased.ﱇﶖ⨀ਆᘍ܀㘱㔮㠹㬅K䍄乍

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.50-53
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• 1988

Lead titanate powders were prepared by mixed-oxide and sol-gel method. O-3 composites were prepared with these powders using Eccogel polymer. According to the volume percent of the PbTiO$_3$ powders, dielectric, piezoelectric properties and poling conditions were investigated. Relative dielectric constants were exponentially increased with volume percent of PbTiO$_3$. Piezoelectric strain coefficients (d$_{33}$ ) were increased with volume percent of PbTiO$_3$. Figure of merit (d$_{h}$.g$_{h}$) for the O-3 composites prepared by the mixed-oxide and sol-gel method were 2728(x10$^{-15}$ $m^2$/N) and 3100(x10$^{-15}$ $m^2$/N) at 70 volume percent of PbTiO$_3$, respectively.ely.

• 공업화학
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• 제23권3호
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• pp.293-296
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• 2012

항균 활성도를 조사하기 위해 이산화티탄미립자 표면에 나노메탈(Au, Ag)을 균일하게 도핑한 나노복합체($Ag-TiO_2,\;Au-TiO_2,\;Ag-TiO_2$@$TiO_x$)를 초음파환원법과 졸-겔 법으로 제조하였다. 이렇게 제조된 나노메탈-이산화티탄 복합체의 항균 활성도는 고체배지 표면에 나노복합체와 함께 E. coli를 도말하여 $37^{\circ}C$에서 배양한 후 생존된 콜로니 개수의 측정을 통해서 이루어졌다. 나노복합체의 초기 항균 효율은 나노메탈이 도핑된 이산화티탄미립자($Ag-TiO_2,\;Au-TiO_2,\;Ag-TiO_2$@$TiO_x$)) 복합체가 도핑하지 않은 이산화티탄미립자($TiO_2$)에 비해 높은 항균 효율을 나타내주었다. 이후, 나노복합체를 $4^{\circ}C$에서 보관 후 장기보관에 따른 항균특성을 비교해본 결과, 나노메탈만 도핑된 복합체($Ag-TiO_2,\;Au-TiO_2$)보다는 $Ag-TiO_2,$의 표면을 다시 산화티탄막으로 코팅한 복합체($Ag-TiO_2$@$TiO_x$)의 항균특성이 오랫동안 유지되는 것을 알수 있었다. 이는 산화티탄막으로 다시 코팅한 $Ag-TiO_2$@$TiO_x$의 경우에 Ag 나노메탈의 산화방지 및 나노복합체의 콜로이드 안정성 향상이 이루어졌기 때문으로 사료된다.