• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권10호
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• pp.504-508
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• 2001

The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.383-386
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• 1998

The microwave dielectric properties and sintering properties of the xCaTi $O_{3}$-yMgTi $O_{3}$-z(L $i_{1}$2/N $d_{1}$2/)Ti $O_{3}$ systems were investigated for the development of microwave dielectric materials. Dielectric constants decreased with increasing the amounts of MgTi $O_{3}$ and increased with reducing the amounts of MgTi $O_{3}$ and increased with reducing (L $i_{1}$2/N $d_{1}$2/)Ti $O_{3}$ contents. The microscopic structures were mixed phase with a little second phase. We found some compositions with .tau.$_{f}$ changed from positive to negative value with increasing MgTi $O_{3}$ or (L $i_{1}$2/N $d_{1}$2/)Ti $O_{3}$ contents. The microscopic strucstures were mixed phase with a little second phase. We found some compositions with .tau.$_{f}$ =0ppm/.deg.C. these compmsitions exhibited the stable dielectric properties on the various sintering temperatures.res.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.370-370
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• 2010

The effects of adding higher-valence impurities on the bipolar resistive switching characteristics of Pt/$NiO_{1+x}$/TiN MIM stacks and physical properties were investigated. $NiO_{1+x}$ films with 14% W deposited at 20% oxygen partial pressure exhibited the bipolar resistance switching characteristics in Pt/$NiO_{1+x}$/TiN MIM stacks, while $NiO_{1+x}$ films with 8.2% W show unipolar resistance switching behavior. The relationship of W-doping and the crystallinity was studied by X-ray diffraction. The metallic Ni contents and $WO_x$ binding states with W amount was investigated by XPS. Our result showed that the metallic Ni, $WO_x$ binding states, and crystallinity in $NiO_{1+x}$ played an important role on the bipolar resistive switching.

• Composites Research
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• 제31권6호
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• pp.365-370
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• 2018

One of the critical parameters to improve the output power for triboelectric nanogenerators (TENGs) is the surface charge density. In this work, we modify the tribo-material of TENG by introducing the $TiO_x$ embedded Polydimethylsiloxane (PDMS) in anatase and rutile phase. The effect of dielectric constant and electronic structure of the $TiO_x$ on the capacitance of TENG and the output power as well are discussed. The surface charge density is increased as the control of the dielectric constant in difference weight percent of $TiO_x$ and PDMS. As the results of that, the 5% $TiO_x$ rutile phase and 7% $TiO_x$ anatase phase embedded PDMS exhibit the highest TENG output. The peak value of voltage/current obtained from $TiO_x$ rutile and anatase phase are ${\sim}180V/8.2{\mu}A$ and $211.6V/8.7{\mu}A$, respectively, at the external force of 5 N and working frequency of 5 Hz, which gives over 12-fold and 15-fold power enhancement compared with the TENG based on the pristine PDMS film. This study provides a better understanding for TENG performance enhancement from the materials view.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.161-166
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• 2005

Fresnoite($Ba_2TiSi_2O_8$)결정을 갖는 $xK_2O-(33.3-x)BaO-16.7TiO_2-50SiO_2(mole\%)$ 유리조성에서 BaO를 $K_2O$로 대체함에 따른 유리화, 열적특성 및 결정화 거풍에 관하여 관찰하였다. x(0$\le$x$\le$20)의 함량이 증가함에 따라 유리화가 용이하였으며, 유리 전이온도 및 결정화 온도가 저온부로 이동하였다. $Ba_2TiSi_2O_8$결정상의 생성을 XRD분석을 통하여 확인하였으며, x의 함량증가가 이질상의 생성과는 무관함을 보였다. 결정화 거동을 DTA를 이용한 비등온법에 의하여 조사하였으며, x의 함량증가에 따라 avrami 지수(n)가 $2.26 {\pm}0.1,\;2.03 {\pm}0.1,\;1.93{\pm}0.15$로, 활성화 에너지는 약 $279 {\pm}12kJ/mole,\;302{\pm}7kJ/ mole,\;319{\pm}1kJ/mole$ 로 변화하였으며, SEM분석결과 x의 함량 증가 시 결정의 방향성이 두드러짐이 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.68-70
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• 1990

(1-X)(Sr$\_$7/9/Pb$\_$2/9/)$\_$(1-y)/(Ca$\_$1/5/Mg$\_$4/5/)$\_$y/TiO$_3$+X(BiO$_2$O$_3$$.$3TiO$_2$) (y=0.145, 0$\leq$X$\leq$0.08) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1180∼1230[$^{\circ}C$], 2[hr], respectly. The grain size were grown with increasing the contents of Bi$_2$O$_3$$.$3TiO$_2$, but decreased more and less in the specimens which had more than 0.04[mol].

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.108.2-108
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• 2003

• 한국재료학회지
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• 제7권10호
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• pp.871-871
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• 1997

(1-x)CaTiO/sub 3/-xLa(Zn/sub 1/2/Ti/sub 1/2/)O/sub 3/의 마이크로 유전특성을 조사하였다. x가 증가함에 따라 비유전율과 공진주파수의 온도계수는 감소하였으며, Qㆍf/sub 0/는 증가하였다. 그 결과 x=0.5인 (Ca/sub 0.5/La/sub 0.5/)(Ti/sub 0.75/Zn/sub 0.25/)O/sub 3/의 조성에서 ε/sub r/=51, Qㆍf/sub 0/=38,000 (at 7 GHz), τ/sub f/=+5ppm/℃의 유전특성이 나타났다. (Ca/sub 0.5/La/sub 0.5/)(Ti/sub 0.75/Zn/sub 0.25/) O/sub 3/조성의 소결온도를 저하시키기 위하여 Bi/sub 2/O/sub 3/를 주조성으로한 소결체를 첨가하여 소결 및 유전특성을 조사하였다. 1wt% 0.76Bi/sub 2/O/sub 3/-0.24NiO가 첨가된 경우 소결온도는 150℃ 낮아졌으며, 비유전율 (ε/sub r/), 공진주파수의 온도계수(τ/sub f), Qㆍf/sub 0/가 각각 50+5ppm/℃, 35,000인 마이크로파 유전특성이 얻어졌다. 또한 3wt%의 0.76Bi/sub 2/O/sub 3/-0.24NiO가 첨가된 경우 소결온도는 200℃ 저하되었고, 비유전율 (ε/sub r/)과 공진주파수의 온도계수 (τ/sub f)는 변하기 않았으나, Qㆍf/sub 0/값이 38,000에서 25,000으로 저하되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.5.2-8
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• 1995

0.15($Ba_{1-x}Sr_{x}$)O-$0.15Sm_2O_3$-$0.7TiO_2$(x=0∼9[m/o]ceramics were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering conditions aid Sr addictive. In the specimen with x=0[m/o] sintered at 1350∼1470[$^{\circ}C$], dielectric constant, quality factor and temperature coefficient of resonant frequency were 70∼74, 2800∼3300(at 3[GHz]), -1.33∼+l.66[ppm/$^{\circ}C$, respectively. Increasing the Sr additive from 0 to 5[m/o], dielectric constant and temperature coefficient of resonant frequency were increased and quality factor was decreased. In the specimen with x=r[m/o] sintered at 1375[$^{\circ}C$], 6[hr], dielectric constant, quality factor and temperature coefficient resonant frequency were 75.62, 2785(at 3[GHz]), +8.39[ppm/$^{\circ}C$], respectively.

• 한국재료학회지
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• 제5권7호
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• pp.816-819
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• 1995

저압 유기금속 화학 증탁법에 의하여 Pt/Ti/SiO$_2$/Si 기판위에 (Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$박막이 제조 되었다. 제조된 BST 박막의 결정화도는 증착온도가 증가함에 따라 (100)방향으로 우선 성장하였다. 90$0^{\circ}C$에서 증착한 BST 박막은 100kHz의 주파수에서 유전상수가 365, 유전손실이 0.052를 나타내었다. 인가전계에 따라 축전용량의 변화가 작은 상유전 특성을 보였으며 0.2MV/cm인가 전계에서 축적 전하 밀도(charge storage density)는 60fC/$\mu\textrm{m}$$^2$을, 0.15MV/cm인가 전계 영역에서 누설 전류밀도(leakage current density)는 20nA/$\textrm{cm}^2$을 나타냈다.냈다.