• 대한설비공학회:학술대회논문집
• /
• 대한설비공학회 2008년도 동계학술발표대회 논문집
• /
• pp.363-368
• /
• 2008

Nitrogen oxides (NO, $NO_2$ and $N_2O$) have been controlled effectively by the SCR catalysts coated on monolith or honeycomb in commercial sites with ammonia as reductant at high temperature range $300{\sim}400^{\circ}C$. However, the catalytic filter has much merit on the point of controlling the particles and nitrogen oxides simultaneously. It will be more advanced-system if the catalytic working temperature is reduced to the normal filtration temperature of under $200^{\circ}C$. This study has focus on the development of the catalytic filter working at the low temperature. So the additive effect of the components such as Pt and Mn (which are known the catalytic component of $V_2O_5/TiO_2$ was investigated. The $V_2O_5-WO_3$ catalytic filter exhibited high activity and selectivity at $250{\sim}320^{\circ}C$ showing more than 95% NO conversion for the treatment of 600 ppm NO at face velocity 2 cm/s. The Pt-$V_2O_5-WO_3$ catalytic filter shifted the optimum working temperature towards the lower temperature ($170{\sim}200^{\circ}C$). And NO conversion was 100% and higher than that of $V_2O_5-WO_3$ catalyst at $250{\sim}320^{\circ}C$. The $MnO_X-V_2O_5-WO_3$ catalytic filter showed the wide temperature range of $220{\sim}330^{\circ}C$ for more than 95% NO conversion. This is a remarkable advantage when considered the $MnO_X$ catalytic filter presents the maximum activity at $150{\sim}250^{\circ}C$ and $V_2O_5-WO_3$ catalytic filter shows the maximum activity at $250{\sim}320^{\circ}C$.

• 한국재료학회지
• /
• 제22권7호
• /
• pp.379-383
• /
• 2012

$TiO_2$ thin films consisting of positively charged poly(diallyldimethylammonium chloride)(PDDA) and negatively charged titanium(IV) bis(ammonium lactato) dihydroxide(TALH) were successfully fabricated on glass beads by a layer-by-layer(LBL) self-assembly method. The glass beads used here showed a positive charge in an acid range and negative charge in an alkaline range. The glass beads coated with the coating sequence of(PDDA/TALH)n showed a change in the surface morphology as a function of the number of bilayers. When the number of bilayers(n) of the(PDDA/TALH) thin film was 20, Ti element was observed on the surface of the coated glass beads. The thin films coated onto the glass beads had a main peak of the (101) crystal face and were highly crystallized with XRD diffraction peaks of anatase-type $TiO_2$ according to an XRD analysis. In addition, the $TiO_2$ thin films showed photocatalytic properties such that they could decompose a methyl orange solution under illumination with UV light. As the number of bilayers of the(PDDA/TALH) thin film increased, the photocatalytic property of the $TiO_2$-coated glass beads increased with the increase in the thin film thickness. The surface morphologies and optical properties of glass beads coated with $TiO_2$ thin films with different coating numbers were measured by field emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD) and by UV-Vis spectrophotometry(UV-vis).

• 한국재료학회지
• /
• 제16권3호
• /
• pp.178-182
• /
• 2006

A single electro-discharge-sintering (EDS) pulse (1.0 kJ/0.7 g), from a $300{\mu}F$ capacitor, was applied to atomized spherical Ti-6Al-4V powder in a low vacuum to produce porous-surfaced implant compacts. A solid core surrounded by a porous layer was formed by a discharge in the middle of the compact. XPS (X-ray photoelectron spectroscopy) was used to study the surface characteristics of the implant material. C, O, and Ti were the main constituents, with smaller amounts of Al, V, and N. The implant surface was lightly oxidized and was primarily in the form of $TiO_2$ with a small amount of metallic Ti. A lightly etched EDS implant sample showed the surface form of metallic Ti, indicating that EDS breaks down the oxide film of the as-received Ti-6Al-4V powder during the discharge process. The EDS Ti-6Al-4V implant surface also contained small amounts of aluminum oxide in addition to $TiO_2$. However, V detected in the EDS Ti-6Al-4V implant surface, did not contribute to the formation of the oxide film..

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.252-255
• /
• 2004

Various Semiconductor/Metal structured nanowires were synthesized from the simple thermal annealing of ball-milled compound powders and the thermal evaporation of metals. Their structural properties were investigated by Scanning Electron Microscopy(SEM) and Transmission Electron Microscopy(TEM), Energy Dispersive X-ray spectroscopy(EDX). Depending on the type of metals and the material of nanowires, uniform somiconductor/metal nanowires(GaN/Al, GaN/Ag) or isolated metal particles on semiconductor nanowires$(SnO_2/Ti,\;Si/Ti)$ were formed on the surface of nanowires.

• 한국분말재료학회지
• /
• 제26권5호
• /
• pp.405-409
• /
• 2019

Piezoelectric ceramic specimens with the $Pb(Mg_{1/3}Nb_{2/3})_{0.65}Ti_{0.35}O_3$ (PMN-PT) composition are prepared by the solid state reaction method known as the "columbite precursor" method. Moreover, the effects of the $Li_2O-Bi_2O_3$ additive on the microstructure, crystal structure, and piezoelectric properties of sintered PMN-PT ceramic samples are investigated. The addition of $Li_2O-Bi_2O_3$ lowers the sintering temperature from $1,200^{\circ}C$ to $950^{\circ}C$. Moreover, with the addition of >5 wt.% additive, the crystal structure changes from tetragonal to rhombohedral. Notably, the sample with 3 wt.% additive exhibits excellent piezoelectric properties ($d_{33}=596pC/N$ and Kp = 57%) and a sintered density of $7.92g/cm^3$ after sintering at $950^{\circ}C$. In addition, the sample exhibits a curie temperature of $138.6^{\circ}C$ at 1 kHz. Finally, the compatibility of the sample with a Cu electrode is examined, because the energy-dispersive X-ray spectroscopy data indicate the absence of interdiffusion between Cu and the ceramic material.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
• /
• pp.21-27
• /
• 2001

Epoxy/BaTiO$_3$composite film type capacitors with excellent stability at room temperature, uniform thickness, and electrical properties over a large area were successfully fabricated. We fabricated composite capacitor films with good film formation capability and easy process ability, from ACF-resin as a matrix and two kinds of BaTiO$_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction. DSC and dielectric properties tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of $7{\mu}{\textrm}{m}$ thick film with 10nF/cm2 and low leakage current were successfully demonstrated.

• 대한전기학회논문지
• /
• 제41권8호
• /
• pp.858-868
• /
• 1992

0.085Ba(LaS11/2TNbS11/2T)OS13T-0.915Pb(ZrS1yTTiS11-yT)OS13T (0.45$\leq$y$\leq$0.65) transparent electrooptic ceramics were fabricated by two-stage sintering method. The structural, ferroelectric and electrooptic properties were investigated varying composition and second sintering time. Also the possibility of application to electrooptic device was studied. If we increase the PbZrOS13T contents, dielectric constants were increased and Curie temperature was decreased. In the composition of 0.55[mol] PbZrOS13T, electromechanical coupling factor and piezoelectric charge constant were the highest values of 43[%] and 173x10S0-12T[C/N], respectively. Mechanical quality factors were decreased with the increasing PbZrOS13T contents. Light transmittance was increased with wavelength when measured from 300[nm] to 900[nm], and with PbZrOS13T contents in the range of 0.50[mol]-0.65[mol], and had the highest value of 67[%] in the composition of 0.65[mol] PbZrOS13T. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the specimens with compositions of 0.65,0.60,0.55[mol] PbZrOS13T were applicable to electrooptic memory device and those with compositions of 0.50,0.45[mol] PbZrOS13T were applicable to linear electrooptic device.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.981-984
• /
• 2001

The piezoelectric properties of 0.05pb(A $l_{0.5}$N $b_{0.5}$) $O_3$-0.95Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$+0.7wt%N $b_2$ $O_{5}$ +0.5wt%Mn $O_2$ceramics with the additives of BaC $O_3$were investigated. For the additions of BaC $O_3$, the dielectric constant ($\varepsilon$$^{T}$ $_{33}$ ), the piezoelectric constant ( $d_{33}$ ), the electromechanical coupling factor ( $k_{p}$ ), and . the mechanical quality factor ( $Q_{m}$ ) were increased, but dielectric loss (tan$\delta$) was decreased. The highest piezoelectric properties and dielectric properties were observed at the sintered temperature of 120$0^{\circ}C$ and 0.4 wt% of BaC $O_3$, and the properties of $d_{33}$ , $k_{p}$ , and $Q_{m}$ were 339(x10$^{-12}$ C/N), 59% and 1754, respectively.vely.y.y.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2003년도 춘계학술발표회 초록집
• /
• pp.55-55
• /
• 2003

최근 높은 해상도의 평판 디스플레이 장치 특히 차세대 TFT-LCD를 개발하기 위해서는 건식식각공정의 개발이 필수 불가결하며 이는 플라즈마 공정장치의 대면적화가 가능해야 한다. 따라서 산업계는 이러한 제조 조건에 알맞는 대면적 플라즈마 반응기 개발을 추구하고 있다. 이를 위해서는 건식식각공정의 개발이 필수 불가결하며 이를 위해선 플라즈마 공정장 치의 대면적화가 가능해야 한다. 이러한 대면적 공정을 위해서는 낮은 공정압력, 고밀도, 높은 플라즈마 균일도가 요구된다. 또한 이러한 대면적 고밀도 플라즈마에의 적용을 위하여 새로운 유도결합형 플라즈마 소오스의 개발이 진행되고 있으며, 안정적인 300mm웨이퍼 공정을 위하여 여러 형태의 안테나가 연구되어지고 있다. 그러나 차세대 TFT-LCD에 적용 가 능하게끔 기존의 ICP 소오스를 직접적으로 대면적화 하는데 있어서는 안테나의 인덕턴스의 값이 키지며, 유전물질의 두께 증가 및 그에 따른 재료비의 상슴에 의해 그 한계점을 나타 내었다. 본 연구에서는 차세대 TFT-LCD 및 POP 대면적 공정에 적용 가능한 고밀도 플라즈마를 발생시키기 위해서 내장형 유도결합형 선형 안테나를 사용하였다. 내장형 유도결합형 선형 안테나가 가지고 있는 고유의 정전기적 결합효과를 최소화시키기 위해 직사각형모양의 플라즈마 챔버(830mm*1,020mm)에서 영구자석을 사용하였다. 영구자석을 사용하여 외부자 장을 인가하였을 때가, 그럴지 않은 때보다 RF 안테나에 걸리는 코일의 전압을 낮춰주었으며, 영구자석의 배열에 따라 코일의 인덕턴스의 값이 크게 변함을 알 수 있었다. 그리고, 최적화된 자장의 배열은 플라즈마의 이온밀도를 증가시켰으며, 플라즈마 균일도 또한 10% 이 내로 유지됨을 알 수 있었다. 따른 식각 메커니즘에 대하여 알아보고자 하였다. $CF_4/Cl_2$ gas chemistry 에 첨 가 가스로 $N_2$와 Ar을 첨 가할 경 우 텅 스텐 박막과 하부 layer 간의 etch selectivity 증가는 관찰되지 않았으며, 반면에 첨가 가스로 $O_2$를 사용할 경우, $O_2$의 첨가량이 증가함에 따라 etch s selectivity 는 계속적으로 증가렴을 관찰할 수 있었다. 이는 $O_2$ 첨가에 따라 형성되는 WOF4 에 의한 텅스텐의 etch rates 의 감소에 비하여, $Si0_2$ 등의 형성에 의한 poly-Si etch rates 이 더욱 크게 감소하였기 때문으로 사료된다. W 과 poly-Si 의 식각 특성을 이해하기 위하여 X -ray photoelectron spectroscopy (XPS)를 사용하였으며, 식각 전후의 etch depth 를 측정하기 위하여 stylus p pmfilometeT 를 이용하였다.X> 피막이 열처리 전후에 보아는 기계적 특성의 변화 양상은 열역학적으로 안정한 Wurzite-AlN의 석출에 따른 것으로 AlN 석출상의 크기에 의존하며, 또한 이러한 영향은 $(Ti_{1-x}AI_{x})N$ 피막에 존재하는 AI의 함량이 높고, 초기에 증착된 막의 업자 크기가 작을 수록 클 것으로 여겨진다. 그리고 환경의 의미의 차이에 따라 경관의 미학적 평가가 달라진 것으로 나타났다.corner$적 의도에 의한 경관구성의 일면을 확인할수 있지만 엄밀히 생각하여 보면 이러한 예의 경우도 최락의 총체적인 외형은 마찬가지로

• 한국자기학회지
• /
• 제7권2호
• /
• pp.90-96
• /
• 1997

ThM $n_{12}$ 구조를 갖는 NdF $e_{10.7}$ $Ti_{1.2}$M $o_{0.1}$의 미세구조 및 자기적 성질을 Mossbauer 분광법과 X-선 회절 분석 그리고 VSM으로 연구하였다. NdF $e_{10.7}$ $Ti_{1.2}$M $o_{0.1}$ 합금은 알곤 가스 분위기의 아크 ㅇ용해로에서 제조하였으며, X-선 회절 분석 결과 결정구조는 상온에서 tetragonal 구조를 갖고 있으며, 격자상수는 $a_{0}$ = 8.637 .angs. , $c_{0}$ = 4.807 .angs. 으로 결정하였다. Mossbauer spectrum을 13 K에서 800 K 까지 취하였으며, Curie 온도는 600 K로 결정하였다. Mossbauer spectrum 분석은 Curie 온도 이하의 온도에서는 Fe-site가 (8 $i_{1}$, 8 $i_{2}$, 8 $j_{2}$, 8 $j_{1}$, 8f)의 5 site로 나타났으며, 400 K 근처에서 .alpha. -Fe 상이 나타나기 시작하여 온도가 증가함에 따라서 점진적으로 증가하여 Curie 온도에서 20.7%의 .alpha. -Fe 상이 존재함을 알았다. 각 site에서의 초미세 자기장은 온도가 증가함에 따라 감소하였으며, 그 크기는 $H_{hf}$(8i)> $H_{hf}$(8j)> $H_{hf}$(8f) 임을 알았고 spin파 여기에 의한 T/ $T_{c}$<0.7 이하에서의 평균 초미세 자기장 $H_{hf}$(T)의 변화는 [ $H_{hf}$(T)- $H_{hf}$(0)]/ $H_{hf}$(0)=-0.34(T/ $T_{c}$)$^{3}$2/-0.14(T/ $T_{c}$)$^{5}$ 2/로 나타났다. 또한 원자간 결합력을 알 수 있는 Debye 온도는 .THETA. = 340 .+-. 5 K로 나타났다.ETA. = 340 .+-. 5 K로 나타났다.