• 분석과학
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• 제27권6호
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• pp.308-313
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• 2014

염료감응형 태양전지의 광전극 및 상대전극에 탄소나노튜브를 도입하여 전지의 광전기적 특성 변화를 EIS, J-V 특성곡선 및 UV-Vis 분광기를 이용하여 분석하였다. $TiO_2$ 광전극의 전기전도도 및 광전효율을 향상시키기 위해 전자전달 촉진자 역할을 하는 multi-wall carbon nanotube (MWCNT)를 $TiO_2$와 혼합하여 $TiO_2$-MWCNT 복합체를 sol-gel 연소 복합공정을 통해 제조하여 조사한 결과 0.1 wt% MWCNT를 첨가한 경우, $TiO_2$만을 사용한 경우에 비해 약 12.5%의 향상된 효율을 보였다. $TiO_2$-MWCNT 복합체에서 MWCNT가 $TiO_2$ 층의 전자이동을 향상시켜 저항을 감소하고 염료와 전자의 재결합을 감소시킨 결과로 생각된다. 그러나 0.1 wt%보다 많은 MWCNT를 첨가할 경우 광투과도 및 염료의 흡착량을 감소시켜 효율이 감소하였다. 또한 상대전극에 MWCNT와 MWCNT-Pt를 적용하였을 경우 각각의 효율은 1.2%와 4.1%로 MWCNT만 적용할 때 보다 백금이 담지된 MWCNT를 사용하였을 경우에 백금과 비슷한 효율을 보였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.123-124
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• 2006

The sandwiched PZT/$BaTiO_3$/PZT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of $BaTiO_3$ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $BaTiO_3$ coating solution at interface of the PZT thick films, The insertion of BaTi03 interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $BaTiO_3$ layers. The leakage current density of the $PZT/BaTiO_3-1$ film is less that $4.41{\times}10^{-9}A/cm^2$ at 5 V.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.29.1-29.1
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• 2011

The selective catalytic reduction (SCR) of $MnO_x$ with $NH_3$ is an effective method for the removal of $MnO_x$ from stationary system. The typical catalyst for this method is $V_2O_5-WO_3(MoO_3)/TiO_2$, caused by the high activity and stability. However, This catalyst is active within $300{\sim}400^{\circ}C$ and occurs the pore plugging from the deposition of ammonium sulfate salts on the catalysts surface. It needs to locate the SCR unit after the desulfurizer and electrostatic precipitator without reheating of the flue gas as well as deposition of dust on the catalyst. The manganese oxides supported on titania catalysts have attracted interest because of its high SCR activity at low temperature. The catalytic activity of $MnO_x/TiO_2$ SCR catalyst with different manganese precursors have investigated for low-temperature SCR in terms of structural, morphological, and physico-chemical analyses. The $MnO_x/TiO_2$ were prepared from three different precursors such as manganese nitrate, manganese acetate (II), and manganese acetate (III) by the sol-gel method and then it calcinated at $500^{\circ}C$ for 2 hr. The structural analysis was carried out to identify the phase transition and the change intensity of catalytic activity by various manganese precursors was analyzed by FT-IR and Raman spectroscopy. These different precursors also led to various surface Mn concentrations indicated by SEM. The Mn acetate (III) tends to be more suppressive the crystalline phase (rutile), and it has not only smaller particle size, but also better distributed than the others. It was confirmed that the catalytic activity of MA (III)-$MnO_x/TiO_2$ was the highest among them.

• 대한화학회지
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• 제50권3호
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• pp.243-246
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• 2006

박막은 Pt/Ti/SiO2/Si 기판 위에 구연산 졸을 이용하여 spin coating에 의해 제작하였다. 기판위에 코팅된 구연산 졸을 380oC에서 15분간 건조시킨 후 750oC에서 10분간 열처리하여 박막을 얻었다. 얻어진 박막은 X-선 회절분석 결과 R3m의 결정구조를 가짐을 알수 있었고, 전기화학적 특성의 측정결과 1차 방전용량은 0.35Ah/cm2-m로 측정되었다.

• 전기화학회지
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• 제9권1호
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• pp.1-5
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• 2006

리튬이온전지용 음극 활물질로 스피넬 구조의 리튬 티탄산화물$(Li_4Ti_5O_{12})$이 졸겔법과 HEBM법으로 제조되었다. 제조된 $Li_4Ti_5O_{12}$의 입자크기 및 결정구조를 확인하기 위하여 X-선 회절분석(XRD), 주사전자현미경(SEM) 및 평균입자분석(PSA)을 수행한 결과 100nm의 균일한 크기의 입자를 확인하였다. 작업전극으로 $Li_4Ti_5O_{12}$를 사용하고 기준전극과 상대전극으로 lithium 호일을 사용하여 전기화학적인 삼상전극 셀을 구성하여 전기화학적인 특성 평가를 한 결과 $1.0\sim2.5V$의 전압 범위에서 고율 충 방전 성능과 0.2C에서 173mAh/g의 용량 특성을 나타내었다. $Li_4Ti_5O_{12}$은 리튬의 삽입과 탈리가 일어나는 동안 구조적인 안정성을 보여주고 있다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.221-225
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• 2003

The MFIS-FET(Field Effect Transistor) devices using $BLT/Y_2O_3$ buffer layer on p-Si(100) substrates were fabricated by the Sol-Gel method and conventional memory processes. The crystal structure, morphologies and electrical properties of prepared devices were investigated by using various measuring techniques. From the C-V(capacitance-voltage) data at 5V, the memory window voltage of the $Pt/BLT/Y_2O_3/si$ structure decreased from 1.4V to 0.6V with increasing the annealing temperature from $700^{\circ}C\;to\;750^{\circ}C$. The drain current (Ic) as a function of gate voltages $(V_G)$ for the $MFIS(Pt/BLT/Y_2O_3/Si(100))-FET$ devices at gate voltages $(V_G)$ of 3V, 4V and 5V, the memory window voltages increased from 0.3V to 0.8V as $V_G$ increased from 3V to 5V.

• Journal of Electrochemical Science and Technology
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• 제1권1호
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• pp.63-68
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• 2010

The $Li_4Ti_5O_{12}$/AC composite was prepared by sol-gel process with ultrasonication. The prepared composite was characterized by SEM, XRD and TG analysis, and their electrochemical behaviors were investigated by cyclic voltammetry, electrochemical impedance spectroscopy and charge-discharge test in 1M $LiBF_4$/PC electrolyte. From the results, the $Li_4Ti_5O_{12}$ particles coated on AC surface had an average particle size of 100 nm and showed spinel-framework structure. When the potential range of the $Li_4Ti_5O_{12}$/AC composite was extended from 0.1 to 2.5 V, redox peaks and electric double layer property were revealed. The initial discharge capacity of $Li_4Ti_5O_{12}$/AC composite was 218 mAh $g^{-1}$ at 1 C. The enhancement of discharge capacity was attributed to electric double layer of added activated carbon.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.357-360
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• 2000

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4${\mu}{\textrm}{m}$. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.05%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive electric field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively.

• 한국세라믹학회지
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• 제56권1호
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• pp.98-103
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• 2019

Optical filters to control light wavelength of displays or cameras are fabricated by multi-layer stacking process of low and high index thin films. The process of multi-layer stacking of thin films has received much attention as an optimal process for effective manufacturing in the optical filter industry. However, multi-layer processing has disadvantages of complicated thin film process, and difficulty of precise control of film morphology and material selection, all of which are critical for transmittance and coloring effect on filters. In this study, the composite $TiO_2$, which can be used to control of UV absorption, coated on nano hollow silica sol, was synthesized as a coating material for optical filters. Furthermore, systematic analysis of the process parameters during the chemical reaction, and of the structural properties of the coating solutions was performed using SEM, TEM, XRD and photo spectrometry. From the structural analysis, we found that the 85 nm nano hollow silica with 2.5 nm $TiO_2$ shell formation was successfully synthesized at proper pH control and titanium butoxide content. Photo luminescence characteristics, excited by UV irradiation, show that stable absorption of 350 nm-light, correlated with a 3.54 eV band gap, existed for the $TiO_2$ shell-nano hollow silica reacted with 8.8 mole titanium butoxide solution. Transmittance observed on substrate of the $TiO_2$ shell-nano hollow silica showed effective absorption of 200-300 nm UV light without deterioration of visible light transparency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.851-856
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• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.