• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1577-1587
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• 1994

TiO2 thin films with the substitution of oxygen with nitrogen were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) using Ti(OCH(CH3)2)4 (titanium tetraisopropoxide, TTIP) and N2O as source materials. X-ray diffraction (XRD) results indicated that the crystal structure of the deposited thin films was anatase TiO2 with only (101) plane observed at the deposition temperatures of 36$0^{\circ}C$ and 38$0^{\circ}C$, and with (101) and (200) plane at above 40$0^{\circ}C$. Raman spectroscopic results indicated that the crystal structure was anatase TiO2 in accordance with the XRD results without any rutile, fcc TiN, or hcp TiN structure. No fundamental difference was observed with temperature increase, but the peak intensity at 194.5 cm-1 increased with strong intensity at 143.0 cm-1 for all samples. The crystalline size of the films varied from 49.2 nm to 63.9 nm with increasing temperature as determined by slow-scan XRD experiments. The refractive index of the films increased from 2.40 to 2.55 as temperature increased. X-ray photoelectron spectroscopy (XPS) study showed only Ti 2s, Ti 2p, C 1s, O 1s and O 2s peaks at the surface of the film. The composition of the surface was estimated to be TiO1.98 from the quatitative analysis. In the bulk of the film Ti 2s, Ti 2p, O 1s, O 2s, N 1s and N 2s were detected, and Ti-N bonding was observed due to the substitution of oxygen with nitrogen. A satellite structure was observed in the Ti 2p due to the Ti-N bonding, and the composition of titanium nitride was determined to be about TiN1.0 from the position of the binding energy of Ti-N 2p3/2 and the quatitative analysis. The spectrum of Ti 2p energy level could be the sum of a 4, 5, or 6 Gaussian curve reconstruction, and the case of the sum of the 6 Gaussian curve reconstruction was physically most meaningful. From the results of Auger electron spectroscopy (AES), it was known that the composition was not varied significantly throughout the whole thickness of the film, and silicon oxide was not observed at the interface between the film and the substrate. The composition of the film was possible (TiO2)1-x.(TiN)x or TiO2-2xNx and in this experimental condition x was found to be about 0.21-0.16.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1011-1016
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• 2000

The (1-x)MgTi $O_3$-xSrTi $O_3$(x=0.02~0.08) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 125$0^{\circ}C$~1375$^{\circ}C$ and 2hours. The structure and microwave dielectric properties were investigated with sintering temperature and composition ratio. From the X-ray diffraction patterns, the cubic SrTi $O_3$and hexagonal MgTi $O_3$structures were coexisted in the (1-x)MgTi $O_3$-xSrTi $O_3$(x=0.02~0.08) ceramics. The dielectric constant($\varepsilon$$_{r}$) was increased and the temperature coefficient of resonant frequency($\tau$$_{f}$)was decreased with addition of SrTi $O_3$. The temperature coefficient of resonant frequency($\tau$$_{f}$) was gradually varied from negative value to positive value with increasing SrTi $O_3$. In the case of 0.96MgTi $O_3$-0.04SrTi $O_3$ceramics sintered at 130$0^{\circ}C$, the dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.5, 5918(at 7.33GHz) and +10ppm/$^{\circ}C$, respectively.y.y.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.169-170
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• 2005

본 연구에서는 초음파 센서에 응용 가능한 $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3+0.5Wt%$ $MnO_2$ 세라믹스에 Zr/(Ti+Zr)비를 0.37에서 0.41로 변화시킨 조성을 1175 $\sim$ 1200$^{\circ}C$ 온도에서 소결하여 이의 결정구조 및 미세조직을 분석하였고, 압전, 유전 특성을 고찰하였다. 본조성에서 x=0.385 조성에서 최대 유전상수 값 3490 이 나타났으며, 그 이상의 첨가에서는 감소하였다. 상경계 영역인 x=0.385 조성에서 $\varepsilon$r, $K_p$, $d_{33}$ 값이 최대값을 나타내었다. $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3+0.5Wt%$ $MnO_2$, 세라믹스에서는 kp 와 $d_{33}$ 는 Zr/(Ti+Zr)비 0.385조성까지 증가하였다가 그 이상 조성에서 감소하였다. $1175^{\circ}C$에서 2시간 소결한 x=0.385조성에서 $\varepsilon$r=3490, kp=0.71, Qm=476의 우수한 압전 특성을 나타내었다.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.346-349
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• 2003

Microwave dielectric characteristics and physical properties of the new Zr$_{1-x}$ (Bn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ (0.2$\leq$x$\geq$ 1.0) system have been investigated as a function of the amount of Bn$_{1}$3/Nb$_{2/3}$ $O_2$substitution. With increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content (x), two phase regions were observed: $\alpha$-Pb $O_2$ solid solution (x<0.4), mixture of the rutile type Zn$_{1}$3/Nb$_{2/3}$Ti $O_4$ and the $\alpha$-Pb $O_2$ solid solution (x$\geq$0.4). In the$\alpha$-Pb $O_2$solid solution region below x<0.4, the Q.f$_{0}$ value sharply increased and the Temperature Coefficient of the Resonant Frequency(TCF) decreased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ contents while dielectric constant (K) showed nearly same value. In the mixture region above x$\geq$4, the dielectric constant and TCF increased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content. Zr$_{1-x}$ (Zn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ materials have excellent microwave dielectric properties with K=44.0, Q.f$_{0}$ : 41000 GHz and TCF =-3.0 ppm/$^{\circ}C$ at x=0.35.=0.35. x=0.35.=0.35.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.68-70
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• 1990

(1-X)(Sr$\_$7/9/Pb$\_$2/9/)$\_$(1-y)/(Ca$\_$1/5/Mg$\_$4/5/)$\_$y/TiO$_3$+X(BiO$_2$O$_3$$.$3TiO$_2$) (y=0.145, 0$\leq$X$\leq$0.08) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1180∼1230[$^{\circ}C$], 2[hr], respectly. The grain size were grown with increasing the contents of Bi$_2$O$_3$$.$3TiO$_2$, but decreased more and less in the specimens which had more than 0.04[mol].

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.235-241
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• 1996

In this paper dielectric and electrostrictive strain properties of (1-y-x)Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$-PbTiO$_{3}$$-yPbTiO_{3}-xSrTiO_{3}[(1-y-x)PMN-yPT-xST]$ ceramics fabricated by using columbite precursor method have been investigated with the substitution of SrTiO$_{3}$(ST). Dielectric constant of the specimens increased with the increase of ST content up to 5[m/o] and decreased with further substitution of ST. And the pyrochlore phase decreased with the increase of ST content up to 5[m/o] in XRD analysis. The elimination of the pyrochlore phase improved dielectric constants. The electrostrictive strains generated by AC electric field have the highest value at 5[m/o] SrTiO$_{3}$ addition and the hysteresis of strain ranged from 12 to 20[%]. The electrostrictive strain at various temperature investigated in the temperature range of $-50[^{\circ}C]~74[^{\circ}C].$ In higher temperature than phase transition region, it showed paraelectric property which shows very small hystersis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.947-953
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• 1998

The microwave dielectric properties of X BaO-0.15($Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2 (X=0.14~0.17) and 0.16BaO-0.15(Bi_xNd_{1-x})_2O_3-0.69TiO_2$ (X=0.12~0.15) ceramics sintered at 1320~$1380^{\circ}C$ were investigated. The microwave dielectric properties of X BaO-0.15(Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2$ (X=0.14~0.17) can be controlled effectively by adjusting X content : with increasing X from 0.14 to 0.17 both dielectric constant and temperature coefficient of resonant frequency decreased from 94.6 to 86 and from 22 ppm/^${\circ}C to -7 ppm/^{\circ}C$, respectively, while quality factor increased from 1300 to 1920 (at 4GHz). The microwave dielectric properties of 0.16BaO-0.15(Bi_x/Nd_{1-x2}O_3 -0.69TiO_2$ (X=0.12~0.15) can be controlled effectively by adjusting X content : with increasing X from 0.12 to 0.15 both quality factor and temperature coefficient of resonant frequency decreased from 1920 to 1430 and from 9 ppm/^${\circ}C to -10 ppm/^{\circ}C$, respectively, while dielectric constant increased from 87.5 to 92.6.

• Applied Chemistry for Engineering
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• v.9 no.4
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• pp.585-590
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• 1998

Fibrous $Na_xTi_nO_{2n+1}$ whisker was prepared by $H^+/Na^+$ ion-exchange on layered hydrous titanium dioxide ($H_2Ti_4O_9{\cdot}nH_2O$). The ion-exchange reaction was proceeded at 0.5~2.0 M NaOH solution. In the ion-exchange at 2.0 M NaOH solution, 73% of sodium was exchanged and the prepared $Na_xTi_nO_{2n+1}$ whisker was a fibrous crystal of about $10{\sim}20{\mu}m$ of length and about $0.7{\mu}m$ of diameter. The phase transition of the ion-exchange phases identified by the thermal analysis. The result showed that the $Na_xTi_nO_{2n+1}$ whisker was decomposed into $Na_2Ti_6O_{13}$ and $TiO_2$ in the temperature of $200{\sim}600^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.85-87
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• 2002

The $(Ba_xBi_{0.6-x}Sr_{0.4})TiO_3$[x=0.1, 0.2, 0.3] ceramics were prepared by conventional mixed oxide method The structural properties of the $(Ba_xBi_{0.6-x}Sr_{0.4})TiO_3$[x=0.1, 0.2, 0.3] ceramics with the sintering temperature($1200^{\circ}C,\;1250^{\circ}C,\;1300^{\circ}C$) were investigated by XRD, SEM, EDS. Increasing the sintering temperature, the intensity of the $Ba_{0.5}Sr_{0.5}TiO_3$ (100), (110), (111), (200), (310) peaks and $SrBi_4Ti_4O_{15}$ (319), (040) peaks were increased. The gram of the $(Bi_{0.2}Ba_{0.4}Sr_{0.4})TiO_3$ ceramics sintered at $1250^{\circ}C$ were fine and uniform. Increasing the sintering temperature. the average gram size of the $(Bi_{0.2}Ba_{0.4}Sr_{0.4})TiO_3$ ceramics were decreased. The density of $(Bi_{0.1}Ba_{0.5}Sr_{0.4})TiO_3$ ceramics sintered at $1250^{\circ}C$ was 5.4524 [$g/cm^2$].

• ETRI Journal
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• v.31 no.6
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• pp.675-679
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• 2009

$Ti_xSi_{1-x}O_y$ (TSO) thin films are fabricated using plasma-enhanced atomic layer deposition. The Ti content in the TSO films is controlled by adjusting the sub-cycle ratio of $TiO_2$ and $SiO_2$. The refractive indices of $SiO_2$ and $TiO_2$ are 1.4 and 2.4, respectively. Hence, tailoring of the refractivity indices from 1.4 to 2.4 is feasible. The controllability of the refractive index and film thickness enables application of an antireflection coating layer to TSO films for use as a thin film solar cell. The TSO coating layer on an Si wafer dramatically reduces reflectivity compared to a bare Si wafer. In the measurement of the current-voltage characteristics, a nonlinear coefficient of 13.6 is obtained in the TSO films.