• Bulletin of the Korean Chemical Society
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• 제19권1호
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• pp.107-109
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• 1998

The $SnO_2$, Sn-doped $In_2O+3\; and \;Ce-doped\; TiO_2$ films have been prepared by RF sputtering method, and their opto-electrochemical properties were investigated in view of the applicability as counter electrodes in the electrochromic window system. These oxide films could reversibly intercalate $Li^+$ ions owing to the nanocrystalline texture, but remained colorless and transparent. The high transmittance of the lithiated films could be attributed to the prevalence of the $Sn^{4+}/Sn^{2+}\; and\; Ce^{4+}/Ce^{3+}$ redox couples having 5s and 6s character conduction bands, respectively. For the Ce-doped $TiO_2$ film, $(TiO_2)_{1-x}(CeO_2)_x$, an optimized electrochemical reversibility was found in the film with the composition of x = 0.1.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.108.2-108
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• 2003

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.5.2-8
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• 1995

0.15($Ba_{1-x}Sr_{x}$)O-$0.15Sm_2O_3$-$0.7TiO_2$(x=0∼9[m/o]ceramics were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering conditions aid Sr addictive. In the specimen with x=0[m/o] sintered at 1350∼1470[$^{\circ}C$], dielectric constant, quality factor and temperature coefficient of resonant frequency were 70∼74, 2800∼3300(at 3[GHz]), -1.33∼+l.66[ppm/$^{\circ}C$, respectively. Increasing the Sr additive from 0 to 5[m/o], dielectric constant and temperature coefficient of resonant frequency were increased and quality factor was decreased. In the specimen with x=r[m/o] sintered at 1375[$^{\circ}C$], 6[hr], dielectric constant, quality factor and temperature coefficient resonant frequency were 75.62, 2785(at 3[GHz]), +8.39[ppm/$^{\circ}C$], respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.374-378
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• 1999

Thin Films of BaYTiO system were Prepared by frequency (rf)/dc magnetron sputtering method. The preparation of target were accomplished by the mixed oxide method, and their composition consisted of the $Ba_{0.997}$ $Y_{0.003}$Ti $O_3$+0.5 $SiO_2$+x $M_{n}$O(x=0, 0.073, 0.1, 0.127, 0.154). The average particle size of (Ba,Y)Ti $O_2$ system ceramics with Mn $O_2$ additives increases as the amount of MnO additives increase and reaches the maximum grain growth when the amount of MnO is 0.127(mol%).).).).

• 대한화학회지
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• 제30권1호
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• pp.19-26
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• 1986

공기산화와 수증기 산화법에 의하여 Ti$O_{2-x}$박막을 만들었고, 알곤 기체속에서 $TiO_2$단결정을 환원하였다. Ti$O_{2x}박막의 전극 특성은 환원된 단결정 rutile의 특성과 거의 같았다. 산소가 용해된 전해질용액에서 측정된 Ti$O_{2-x}$전극들의 전류-전압 곡선으로 부터 음극전류의 peak는 -0.8V ~ -1.0V에서 나타났으며, 영볼트 근처의 Ti$O_{2-x}$전극들의 음극전류는 공기로 포화된 용액에서 보다 질소로 포화된 용액에서 더 크게 나타났다. 시간에 따르는 전류 (i)의 변화는 $i_0e^{-kt}$식에 의존하였고 이때의 속도상수(k)는 $k_0{[H^+]}^nexp(A{\eta}+\frac{E_a}{RT})$로 나타낼 수 있었다. 여기서 활성화에너지 Ea는 0.035~0.145V의 과전압에서는 4.6~4.8kcal/mole, 0.2~0.5V의 과전압에서는 1.6kcal/mole이고, 위식중의 n과 A는 0.035~0.145V에서 0.1과, 5.4~5.6/V, 0.2~0.5V에서는 0.04와 1.3/V이었다. 산소의 환원반응은 전체적으로 비가역 반응임을 알았다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1309-1311
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• 1998

$Pb_{1-x}La_xTi_{1-x/4}O_3$ (PLT(x)) thin film has been regarded as one of the most promising materials for applications of sensor, optic devices, and memory devices, because it exhibits various properties as changing the amount of Lanthanum component. So we have prepared PLT thin films on platinized silicon (actually Pt/Ti/$SiO_2$/Si) substrates in oxygen ambient by laser ablation. Energy dispersive X-ray (EDX) revealed that the stoichiometric thin films were fabricated.

• 한국재료학회지
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• 제14권10호
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.95-99
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• 2011

$(1-x)BaTiO_3+(x)Cd_5(PO_4)_3Cl$ ceramics were prepared by the conventional ceramic technique, i.e., solid state reaction at high temperature. The concentration of $Cd_5(PO_4)_3C$ was varied from 0.01 to 0.15 mole fraction. In order to study the phase transitions of our ceramics, the Raman scattering spectra were measured as functions of concentration x and temperature. It was found that the soluble limit of $Cd_5(PO_4)_3Cl$ in $BaTiO_3$ was the x=0.05 composition and $BaTiO_3$ phase disappeared above x=0.10. A new phase identified as $Ba_4Ti_3P_2O_{15}$ was detected in all samples of our compositions. The Curie temperature shifts up to $130^{\circ}C$ as the concentration x increases from zero to 0.05 and shift down to $95^{\circ}C$ as further increases to 0.08. For the increase of the Curie temperature, it is suggested that it can result from the inhibition of displacement of $Ti^{4+}$ in the distorted octahedron due to well dispersed $Ba_4Ti_3P_2O_{15}$ and $Cd_5(PO_4)_3Cl$ phase.

• 전기화학회지
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• 제14권1호
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• pp.27-32
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• 2011

Cr을 첨가한 $Li_4Ti_5O_{12}$의 전기화학적 특성을 고찰하였다. 산화물에 금속원자가 치환될 경우에 결정구조가 변화되며, $Li_4Ti_5O_{12}$의 전기화학적 특성이 변화하게 된다. 졸-겔법을 이용하여 $Li_4Ti_{5-x}Cr_xO_{12}$ (x = 0~0.2)를 제조하였으며, 전기로에서 $800{\sim}850^{\circ}C$로 공기중에서 12시간 동안 열처리하였다. 시료의 물리적인 특성은 TG-DTA, XRD, SEM, FT-IR을 사용하여 측정하였으며, 전기화학적인 특성은 0.01~2.0V의 범위에서 배터리충방전기를 사용하여 측정하였다. $Li_4Ti_5O_{12}$는 1C에서 169.9 mAh/g의 용량을 나타내었으며, 0.1C로 변화되었을 경우에 초기용량의 97.5%를 나타내었다. $Li_4Ti_{4.9}Cr_{0.1}O_{12}$ 시료는 1C에서 193.8 mAh/g의 용량을 보였으며, 0.1C에서는 초기용량의 98.8%를 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.148-151
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• 2000

$Mg_{2-2x}Ti_xO_2$ films were prepared by e-beam evaporation method to be used as possible substitutes for the conventional MgO protective layer. The oxygen content in the films and in turn, the ratio of metal to oxygen gradually increased with increasing the $TiO_2$ content in the starting materials. The pure MgO films exhibited the crystallinity with strong (111) orientation. The $Mg_{2-2x}Ti_xO_2$ films, however, had the crystallinity with (311) preferred orientation. When the $[TiO_2/(MgO+TiO_2)]$ ratios of 0.1 and 0.15 were used, the deposited films exhibited the secondary electron emission yields improved by 50% compared to that of the conventional MgO protective layer, which resulted in reduction in discharge voltage by 12%.