• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.338-341
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• 2002

$(Ba_{1-x}Sr_{0.4}Ca_x)TiO_{3}$ (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. Their structural and dielectric properties were investigated with variation of composition ratio and $Al_{2}O_{3}$ doping contents. As results of the X-ray diffraction and microstructure analysis, the grain size of BSCT thick films was decreased with increasing $Al_{2}O_{3}$ amount. The thickness of BSCT thick films by 4-coating/drying is about $110{\sim}120{\mu}m$. The tunability increased with decreasing Ca content, and the BSCT(50/40/10) specimen doped with 1.0wt% $Al_{2}O_{3}$ showed the highest value of 12.94% at 5kV /cm.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.135-140
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• 2002

In this paper, We deposited the BST thin-film on p-type (100)Si, (100)MgO and MgO/Si substrates respectively using RF magnetron sputtering method. After the BST thin-fil m was deposited, we performed RTA(rapid thermal anneal) at $600^{\circ}C$, oxygen atmosphere and 1 min. In the XRD measurement, we observed the (110) $Ba_{0.5}Sr_{0.5}TiO_3$ main peak in all samples and the peak intensity increased after post annealing. Then we manufactured a capacitor using Al Electrode and measured I-V, C-V. In C-V measurement result values for each substrate, dielectric constant was calculated 120 (bare Si), 305(MgO/Si), 310(MgO) respectively. A leakage current density was present less than 1 $\mu\textrm{A/cm}^2$ at applied fields below 0.3 MV/cm. In conclusion we confirmed that MgO/Si substrates give good results for BST thin-film deposition.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.157.1-157.1
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• 2016

In this work, we experimentally investigated the solar absorption performance of Cu-based scalable nanostructured surfaces and compared their performance with the conventional TiNOX. We fabricated Cu-based nanostructured surfaces with a controlled chemical oxidation process applicable to a large area or complex geometry. We optimized the process parameters including the chemical compounds, dipping time and process temperature. We conducted both lab-scale and outdoor experiments to characterize the conversion efficiency of each absorber surfaces with single and double glazing setup. Lab-scale experiment was conducted with $50mm{\times}50mm$ absorber sample with 1-sun condition (1kW/m2) using a solar simulator (PEC-L01) with measuring the temperature at the absorber plate, cover glass, air gap and ambient. From the lab-scale experiment, we obtained ${\sim}91^{\circ}C$ and $94^{\circ}C$ for CuO and TiNOX surfaces after 1 hr of solar illumination at single glazing, respectively. To measure the absorber performance at actual operating condition, outdoor experiment was also conducted using $110mm{\times}110mm$ absorber sample. We measured the solar flux with thermopile detector (919P-040-50). From outdoor experiment, we observed ${\sim}123^{\circ}C$ and $131^{\circ}C$ for CuO and TiNOX with 0.6 kW/m2 insolation at double glazing, respectively. We showed that the suggested nanostructured CuO solar absorber has near-equivalent collection efficiency compared with the state-of-the-art TiNOX surfaces even with much simpler manufacturing process that does not require an expensive equipment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.463-466
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• 2001

In recent year, Ferroelectric BLT($Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$) is a promising candidate materials. This study was Practiced to make good conditions of BLT targets. In this study, calcination and sintering temperature were kept at 75$0^{\circ}C$, 110$0^{\circ}C$ for 2 hour respectively. the density obtained 7.612, 7.98, 7.877 g/㎤ as La$_2$O$_3$ contents were 0.0mol%, 0.25mo1%, 0.5mol%. Especially, the lanthanum content of 0.5 mol% measured C-axis (117) preferred orientation more than the others targets in the XRD. In $\varepsilon$$_{r}$-f relationship using by HP 4194 A impedance analyzer, the 0.5 mol% observed above 200 relative dielectric constant. but the dissipation factor was higher than others targets at 100Hz~13MHz range. SEM photograph with the content of La$_2$O$_3$ was observed like rod and plate types.types.s.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.577-582
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• 2017

Self-cleaning and photocatalytic $TiO_2$ thin films were prepared by a facile sol-gel method followed by spin coating using peroxo titanic acid as a precursor. The as-prepared thin films were heated at low temperature($110^{\circ}C$) and high temperature ($400^{\circ}C$). Thin films were characterized by X-ray diffraction(XRD), Field-emission scanning electron microscopy(FESEM), UV-Visible spectroscopy and water contact angle measurement. XRD analysis confirms the low crystallinity of thin films prepared at low temperature, while crystalline anatase phase was found the for high temperature thin film. The photocatalytic activity of thin films was studied by the photocatalytic degradation of methylene blue dye solution. Self-cleaning and photocatalytic performance of both low and high temperature thin films were compared.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.198-198
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• 2004

• Journal of the Korea institute for structural maintenance and inspection
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• v.2 no.2
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• pp.170-176
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• 1998

The team mixed PbO, $ZrO_2$, $TiO_2$, $Nb_2O_5$ and $MnCO_3$, to make $Pb[(Zr_{0.54}\;Ti_{0.46})\;Nb_{0.005}]O_3+4%MnCO_3$. The electroded PZT ceramics were poled by 3 kV/mm at $110^{\circ}C$ for 600 s. We assembled the 0.4mm thick PZT slices into ultrasonic transducers. Central frequency of the probe is 5 MHz, which is proper to the thickness gauge for steel pipes and for flaw detector. The probe can detect a disk shape defect of 1mm diameter at 15cm deep in steel block. The new probe's Fresnel zone that the ultrasonic beam do not broaden is 13mm. Over the Fresnel zone, the ultrasonic beam spreads. Half of the beam spread angle of the probe is $4.3^{\circ}-4.6^{\circ}$. This probe can be used for the ultrasonic transducers for non-destructive testing of steel bridges.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.60-64
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• 2023

In this study, the electrical contact resistance characteristics between graphene and metals, which is one of important factors for the performance of graphene-based devices, were compared. High-quality graphene was synthesized by chemical vapor deposition (CVD) method, and Al, Cu, Ni, and Ti as electrode materials were deposited on the graphene surface with equal thickness of 50 nm. The contact resistances of graphene transferred to SiO₂/Si substrates and metals were measured by the transfer length method (TLM), and the average contact resistances of Al, Cu, Ni, and Ti were found to be 345 Ω, 553 Ω, 110 Ω, and 174 Ω, respectively. It was found that Ni and Ti, which form chemical bonds with graphene, have relatively lower contact resistances compared to Al and Cu, which have physical adsorption properties. The results of this study on the electrical properties between graphene and metals are expected to contribute to the realization of high-performance graphene-based devices including electronics, optoelectronic devices, and sensors by forming low contact resistance with electrodes.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.657-663
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• 1993

BaTiO3 sputtering targets of 3 inch diameter were prepared by sintering the CIP (Cold Isotatic Pressing) compacts at 136$0^{\circ}C$ for 3hrs. The apparent density and grain size were 97% and 30${\mu}{\textrm}{m}$, respectively. After BaTiO3 films were deposited on Si and Pt/Ti/SiO2/Si substrates using these targets, films were annealed at various conditions and the crystallization behavior, reaction with the substrate and the electrical properties were investigated. The films on both substrates required 5~20hrs furnace annealing for crystallization at the temperatures from $600^{\circ}C$ to 80$0^{\circ}C$. For the films on Si substrate, interaction between the film and the substrate was suppressed upt o $700^{\circ}C$ for 10 hrs and the relative dielectric constant was 30. As the annelaing temperature and time were increased, the relative dielectric constants of the films decreased due to the formation of silicate phases through the reaction with the substrate. For the BaTiO3 films on Pt/Ti/SiO2/Si substrate, the reaction with the substrate was further reduced when the annealing condition was identical to that for Si substrate, but the reaction between the layers in Pt electrode took place above $700^{\circ}C$. When the films were annealed at $600^{\circ}C$ where the stability of Pt electrode was sustained, relative dielectric constant was increased to 110 since the reaction with substrate was effectively reduced even for a longer annealing time and the crystallization was enhanced.