• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.249-249
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• 2009

We have grown large area BSTO($(Ba_{1-x}Sr_x)TiO_3$) thin films (x=0.4) on 2 inch diameter MgO (001) single crystal substrates using a pulse laser deposition(PLD) system. Substrate temperature and oxygen pressure in the deposition chamber, and the laser optics for ablating a target have been controlled to obtain the uniform thickness and preferred orientation of the films. Results of x-ray diffraction and rocking curve analysis revealed that the BSTO films were grown on MgO substrates with a preferred orientation (002), and the full width half maximum of the rocking curve was measured to be 0.86 degree at optimum condition. Roughness of the films have been measured to be $3.42{\AA}$ rms by using atomic force microscopy. We have successfully deposited the large area BSTO thin films of $4000{\AA}$ thickness on 50 mm diameter MgO substrates.

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.598-605
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• 1995

Thin films of $YB_{2}Cu_{3}O_{7-d}$ were prepared on various substrated of MgO(100), $SrTiO_{3}$, and $LaAlO_{3}$ by using off-axis magentron sputtering methods and annealing in-situ. The prarameters of film fabrication processes had been optimized through a "follow the lcoal maxima" strategy to yield good quality films in therms of the critical temperature $T_{c}$ and the critical current density $J_{c}$. Optimizedproecsses employing a plane magndtron and an cylindrical magnetron yielded $T_{c}$>90K along with $J_{c}$$10^{6}$A/$\textrm{cm}^2$ at 77K and > 2${\times}$$10^{7}$A/$\textrm{cm}^2$ at 5K. The sampels, however, showed degradationinthe properties, after chemical etching for fabrication of microbridges with the line width of 2-10 mocrons. In particular, the value of $T_{c}$ for the microbridges of 2microns was as small as 80%. The degradation was strongly dependent on the line width through a formula : $T_{c}$(e)=$T_{c}$)b) [1-a exp(-1000 bL)} where $T_{c}$(e) and $T_{c}$ (b) are the values of $T_{c}$ in the absolute scale measured after and before chemical etching, respectively and L is the line width in mm. By utilizing a best fitting technique, the proper constant values of a and to b were found as exp(-1.2) and 0.22, respectively. This formula was very useful in estimatiing the upper limit of the device operationtemperature.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.775-780
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• 1995

Thin films of titanium nitride are formed using the tetrakis-dimethyl-amino-titanium (TDMAT(Ti[N($CH_3$)$_2$]$_4$)) under various conditions. The formation of TiN films has been obtained from the thermal decomposition of the Ti-precursor and the gas phase reaction between TDMAT and ammonia(NH$_3$). The resistivity of the MOCVD film can be attributed to their impurity. Especially the curve fitting graph of XPS data is revealed that main impurities in the films as carbon and oxygen make various interstitial compounds which has influenced physical and electrical properties of the film. In the contact hole with the aspect ratio of 3:1 and the diameter of 0.5${\mu}{\textrm}{m}$, the SEM morphology shows that the step coverage is more decreased in the films formed y flowing ammonia additionally than the films formed by pyrolysis of TDMAT and the phenomenon is probably related with the activation energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.147-147
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• 2010

PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as acceptors and sintered $1250^{\circ}C$/2hrs. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $Bi_2O_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength waslowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.29-37
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• 1999

In this study, we have prepared PLT thin films having various La concentrations by using sol-gel method and studied on the effect of La concentration on the electrical properties of PLT thin films. As the La concentration increases from 5mol% to 28mol%, the dielectric constant at 10kHz increases from 428 to 761, while the loss tangent decreases from 0.063 to 0.024. Also, the leakage current density at 150kV/cm has a tendency to decrease from 6.96${\mu}A/cm^2$ to 0.79${\mu}A/cm^2$. In the result of hysteresis loops of PLT thin films, the remanent polariation and the coercive field decrease from 9.55${\mu}C/cm^2$ to 1.10${\mu}C/cm^2$ and from 46.4kV/cm to 13.7kV/cm, respectively. With the result of the fatigue test on the PLT thin films, we have found that the fatigue properties are improved remarkably as the La concentration increases from 5 mol% to 28mol%. In particular, the PLT28) has paraelectric phase and its charge storage clensity and leakage current density at 5V are 134fC/${\mu}cm^2$ and 1.01${\mu}A/cm^2$, respectively. The remanent polarization and coercive field of the PLT(10) film are 6.96${\mu}C/cm^2$ and 40.2kV/cm, respectively. After applying of $10^9$ square pulses with ${\pm}5V$, the remanent polarilzation of the PLT(10) film decreases about 20% from the initial state. In the results, we conclude that the 10mol% and the 28mol% La doped PLT thin films are very suitable for the capacitor dielectrics of new generation of DRAM and NVFRAM respecitively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.225-225
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• 2008

PLZT 박막을 Pt/Ti/$SiO_2$/Si 기판 위에 RF-마그네트론 스퍼터링방법으로 형성할 때 기판온도에 따른 PLZT 박막의 결정성과 전기적 특성 및 강유전 특성에 미치는 영향에 관하여 연구하였다. 하부전극 Pt와 PLZT 박막 사이에는 완충층으로 $TiO_2$를 사용하여 계면에서의 상호확산을 제어하면서 우수한 물성의 PLZT 박막을 얻고자 하였으며, 여러 기판온도에서 PLZT 박막을 증착한 후, 박막의 결정화를 위해 급속열처리법으로 $700^{\circ}C$로 후열처리하였다. 그 결과 기판온도 $400^{\circ}C$에서 증착한 PLZT 박막이 가장 우수한 특성을 나타내었으며, 이때의 잔류분극과 누설전류밀도는 각각 15.8 ${\mu}C/cm^2$, $5.4\times10^{-9}A/cm^2$ 이였다. 그러나 $500^{\circ}C$에서는 결정립 조대화현상이 나타나면서 잔류분극과 누설전류밀도는 9 ${\mu}C/cm^2$, $3.09\times10^{-7}A/cm^2$로 특성이 저하되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.15-23
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• 2002

In this study, metal/ZnO contacts were thermally annealed at different temperatures (as-dep., 400$^{\circ}C$, 600$^{\circ}C$, 800$^{\circ}C$, 1000$^{\circ}C$) for the investigation of electrical properties, and surface and interface characteristics. The analysis of the element composition and the chemical bonding state of the surface was made by the XPS(X-ray photoelectron spectroscopy). An attempt was made to establish the electrical property-microstructure relationship for the (Ti, Au)/ZnO. The Ti/ZnO contact exhibits an ohmic characteristics with a relatively high contact resistance of 4.74${\times}$10$\^$-1/ $\Omega$$\textrm{cm}^2$ after an annealing at 400$^{\circ}C$. The contact showed a schottky characteristics when the samples were annealed at higher temperature than 400$^{\circ}C$. The transition from the ohmic to schottky characteristics was contributed from the formation of the oxide layers as was confirmed by the peaks for O-O and Ti-O bondings in XPS analysis. For the Au/ZnO contact the lowest contact resistance was obtained from the as-deposited sample. The resistance was slowly increased with annealing temperature up to 600$^{\circ}C$. The ohmic characteristics were maintained eden fort 600$^{\circ}C$ annealing. The XPS analysis showed that the Au-O intensity was dramatically decreased with temperature above 600$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.56-59
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• 1997

SAW filters of transversal type were fabricated on some piezoelectric substrates of the LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$Y-X, Quartz ST-cut wafers through the simulation in which the number o: IDT and window function were changed for the required frequency, and the mask making. Their IDT spacing and width were 3 ${\mu}{\textrm}{m}$, chip size was 4.462 $\times$ 2.086 mm$^2$, and they had double electrode transversal type IDTs. In addition to pure Al electrode devices, Ti thin films having the different thicknesses was introduced between the Al electrode and the substrate for improving the power resistance strength. They had 11-12 dB insertion losses similar to those of pure Al electrode SAW filters in case of LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$ Y-X, meaning that Ti thin film was not detrimental to the insertion loss and general frequency properties. The filters had the center frequencies 162MHz for LN 128$^{\circ}$ Y-X, 186MHz for 64$^{\circ}$ Y-X, and 131MHz for Quartz ST-cut substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.73-74
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• 2006

Ferroelectric thin films have been widely investigated for future nonvolatile memory application. We fabricated the BLT ($(Bi,La)_4Ti_3O_{12}$) films on Si using a STA ($SrTa_2O_6$) buffer layer BLT and STA film were prepared by sol-gel method. Measurement data by XRD and AFM, showed that BLT film and STA films were well crystallized and a good surface morphology. From C-V measurement reward that the Au/BLT/STA/Si structure showed a clockwise hysteresis loop with a memory window of 1.5 V for the bias voltage sweep of ${\pm}5$ V. From results, the Au/BLT/STA/Si structure is useful for FeFETs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.400-403
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• 2003

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562\;{\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.