• Korean Journal of Metals and Materials
• /
• v.46 no.10
• /
• pp.691-699
• /
• 2008

Electrochemical characteristics of Ti-30Ta-xZr alloys coated with HA/TiN by using magnetron sputtering method were studied. The Ti-30Ta containing Zr(3, 7, 10 and 15wt%) were 10 times melted to improve chemical homogeneity by using a vacuum furnace and then homogenized for 24hrs at $1000^{\circ}C$. The specimens were cut and polished for corrosion test and coating, and then coated with HA/TiN, respectively, by using DC and RF-magnetron sputtering method. The analyses of coated surface and coated layer were carried out by using optical microscope(OM), field emission scanning electron microscope(FE-SEM) and X-ray diffractometer(XRD). The electrochemical characteristics were examined using potentiodynamic (-1,500 mV~ + 2,000 mV) and A.C. impedance spectroscopy(100 kHz ~ 10 mHz) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The microstructure of homogenized Ti-30Ta-xZr alloys showed needle-like structure. In case of homogenized Ti-30Ta-xZr alloys, a-peak was increased with increasing Zr content. The thickness of TiN and HA coated layer showed 400 nm and 100 nm, respectively. The corrosion resistance of HA/TiN-coated Ti-30Ta-xZr alloys were higher than that of the non-coated Ti-30TaxZr alloys, whic hindicate better protective effect. The polarization resistance($R_p$) value of HA/TiN coated Ti-30Ta-xZr alloys showed $8.40{\times}10^5{\Omega}cm^2$ which was higher than that of non-coated Ti-30Ta-xZr alloys.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.8
• /
• pp.869-874
• /
• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.8
• /
• pp.376-381
• /
• 2001

The(1-x) MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics were fabricated by the conventional mixed oxide method. The structural and microwave dielectric properties were investigated by XRD, SEM, EDS and network analyzer. The sintering temperature and time were 1275$^{\circ}C$~135$0^{\circ}C$ and 2hours, respectively. In the XRD results of 0.96MgTiO$_3$-0.04SrTiO$_3$ceramics, the perovskite structure of SrTiO$_3$and ilmenite structure of MgTiO$_3$phase were coexisted. The dielectric constant($\varepsilon$(sub)${\gamma}$) and temperature coefficient of resonant frequency($\tau$(sub)f) were increased with addition of SrTiO$_3$. In thie case of 0.96MgTiO$_3$-0.04SrTiO$_3$ ceramics sintered at 13$25^{\circ}C$, the dielectric constant, quality factor(Q) and temperature coefficient of resonant frequency($\tau$(sub)f) were 20.13, 7956(at 7.27GHz), and +1.76ppm/$^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.11
• /
• pp.947-953
• /
• 1998

The microwave dielectric properties of X BaO-0.15($Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2 (X=0.14~0.17) and 0.16BaO-0.15(Bi_xNd_{1-x})_2O_3-0.69TiO_2$ (X=0.12~0.15) ceramics sintered at 1320~$1380^{\circ}C$ were investigated. The microwave dielectric properties of X BaO-0.15(Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2$ (X=0.14~0.17) can be controlled effectively by adjusting X content : with increasing X from 0.14 to 0.17 both dielectric constant and temperature coefficient of resonant frequency decreased from 94.6 to 86 and from 22 ppm/^${\circ}C to -7 ppm/^{\circ}C$, respectively, while quality factor increased from 1300 to 1920 (at 4GHz). The microwave dielectric properties of 0.16BaO-0.15(Bi_x/Nd_{1-x2}O_3 -0.69TiO_2$ (X=0.12~0.15) can be controlled effectively by adjusting X content : with increasing X from 0.12 to 0.15 both quality factor and temperature coefficient of resonant frequency decreased from 1920 to 1430 and from 9 ppm/^${\circ}C to -10 ppm/^{\circ}C$, respectively, while dielectric constant increased from 87.5 to 92.6.

• Journal of the Korean Ceramic Society
• /
• v.40 no.4
• /
• pp.328-332
• /
• 2003

Ceramics of xCaTiO$_3$-(1-x)Li$_{0.5}$Nd$_{0.5}$TiO$_3$(xCT-(1-x)LNT) series have been prepared by the mixed oxide route. Powders were calcined at 110$0^{\circ}C$ ; cylindrical specimens were fired at temperatures in the range 1300-150$0^{\circ}C$. Sintered products were typically 90-95% dense. The microstructures were dominated by angular grains typically 1.3${\mu}{\textrm}{m}$ to 3.5 ${\mu}{\textrm}{m}$ in size. Twinning in the microstructures was analysed using Electron Back Scattered Diffraction (EBSD). Microwave dielectric properties of xCT-(1-x)LNT at 2.1 GHz ($\varepsilon$$_{r}$, Qxf, and $\tau$r) were 170,3800 GHz and 744 ppm/$^{\circ}C$ for pure CaTiO$_3$ and 80,2000 GHz and -240 ppm/$^{\circ}C$ for LNT. The $\tau$r decreases almost linearly from 744 for pure CaTiO$_3$ to -240 for pure LNT.LNT.T.

• Journal of the Korean Ceramic Society
• /
• v.39 no.11
• /
• pp.1108-1112
• /
• 2002

pellets were fabricated as a reactor control material by the powder process. Sinterability of $Dy_2O_3+TiO_2$ mixtures and phases of solid solutions were analyzed by using TMA and XRD, respectively. The thermal conductivity of pellet was determined from the measurement data of the specific heat and the thermal diffusivity of the pellet. The sinterability and the sintered density varied as a function of Dy content in $Dy_xTi_yO_z$. The pellet of $3\;g\;Dy/cm^3\;Dy_xTi_yO_z$ melted in the sintering temperature of $1580{\circ}C$. There were two phases of $Dy_2TiO_5+Dy_2Ti_2O_7$ and a single phase of $Dy_2TiO_5$ for the pellet that has the Dy content of and , respectively. The thermal conductivity of $Dy_xTi_yO_z$ was nearly constant in the temperature range of $25~600{\circ}$. It was 1.69~1.78 W/mK for the pellet sintered in and 1.49~1.55 W/mK for the pellet sintered in $1550{\circ}$.

• Proceedings of the KIEE Conference
• /
• 1999.11a
• /
• pp.31-34
• /
• 1999

In the present study, we fabricated stoichiometric $(Ba_{1-x}Sr_x)TiO_3$ thin films at various substrate temperature and contents using of magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/$SiO_2$/Si). The substate temperature deposited at 200[ $^{\circ}C$], 400[$^{\circ}C$] and 600[$^{\circ}C$] and crystalline BST thin films show above 400[$^{\circ}C$]. Also, the composition of $(Ba_{1-x}Sr_x)TiO_3$ thin films deposited on Si wafer substrate at 400[$^{\circ}C$] were closed to stoichiometry($1.015{\sim}1.093$ in A/B ratio), but compositional deviation from a stoichiometry is larger as $SrCO_3$ is added. The drastic decrease of dielectric constant and increase of dielectric loss in $(Ba_{1-x}Sr_x)TiO_3$thin films is observed above 100[kHz]. V-I characteristics of $(Ba_{1-x}Sr_x)TiO_3$ thin films show the decrease of leakage current with the increase of $SrCO_3$ contents.

• Analytical Science and Technology
• /
• v.15 no.1
• /
• pp.15-19
• /
• 2002

The pretreatment of tungsten added $BaTiO_x$ ceramics was performed to improve the recovery of Ba, Ti and W. $BaTiO_x$ ceramics were digested with HF : HCl ( 1 : 2 ) mixture in an acid digestion bomb at $220^{\circ}C$ for 3 hrs. The concentration of Ba, Ti and W were determined by ICP-AES. Recoveries of Ba, Ti and W were 99.6%, 99.8% and 99.2%, respectively. And their C.V. values were 1.02%, 0.73% and 1.79%. Using this method, the analytical results of Ba, Ti and W for a real sample were obainted to be 25.9% (w/w), 38.8% (w/w) and 3.31% (w/w), respectively.

• Korean Journal of Metals and Materials
• /
• v.47 no.9
• /
• pp.591-596
• /
• 2009

$TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.6
• /
• pp.633-639
• /
• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.